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    HY53C464L Search Results

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    HY53C464L Price and Stock

    SK Hynix Inc HY53C464LS-80

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    Bristol Electronics HY53C464LS-80 185
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    HY53C464LS-80 19
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    Quest Components HY53C464LS-80 4,210
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    HY53C464LS-80 171
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    HY53C464LS-80 148
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    HY53C464LS-80 15
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    HY53C464LS-80 12
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    HY53C464LS-80 2
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    SK Hynix Inc HY53C464LS-10

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    Bristol Electronics HY53C464LS-10 161
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    HY53C464LS-10 17
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    Component Electronics, Inc HY53C464LS-10 1
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    . HY53C464LS-80

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    Bristol Electronics HY53C464LS-80 19
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    hyn HY53C464LS80

    64K X 4 FAST PAGE DRAM Fast Page DRAM, 64KX4, 80ns, CMOS, PDIP18
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    ComSIT USA HY53C464LS80 43
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    KOREA HY53C464LS80

    INSTOCK
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    Chip 1 Exchange HY53C464LS80 49
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    HY53C464L Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY53C464L-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY53C464L-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY53C464L-70 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY53C464L-80 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF

    HY53C464L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HY53C464

    Abstract: HY53C464-70 536X4 65536x4
    Text: SIE D HYUNDAI ELECTRONICS • 4b7SOññ 0000SL3 32T « H Y N K MYUNDA HY53C464 SEMICONDUCTOI MK 4 liii M O* | U \ \ 1 M 121202 B-JAN 92 . FEATURES DESCRIPTION • Low power dissipation for HY53C464L — Operating Current, 100ns : 50mA (max.) — TTL Standby C u rren t: 2mA (max.)


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    PDF G000Sb3 M121202B-JAN92 HY53C464 536X4 HY53C464L) HY53G464 PACKAGE-300 T-46-23-17 HY53C464-70 65536x4

    r4kf

    Abstract: HY53C464LS fr4k HY53C256LS HY531000J
    Text: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S


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    PDF 256Kx 64Kx4) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF r4kf fr4k HY531000J

    HY53C464LS

    Abstract: HY53C464
    Text: HYUNDAI HY53C464 Series SEMICONDUCTOR 64Kx 4-bit CMOS DRAM DESCRIPTION The HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


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    PDF HY53C464 330mil 18pin 4b750afl 1AA02-20-APR93 HY53C464S HY53C464LS

    HY53C464LS

    Abstract: HY53C464F hy53c464 hy53c464lf HY53C464LF70 HY53C464S An-313
    Text: HY53C464 Seríes " H Y U N D A I 64K X 4-bit CMOS DRAM DESCRIPTION Hie HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


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    PDF HY53C464 330mil 18pin CMO442) 335ie P-021 A02-20-MA HY53C464LS HY53C464F hy53c464lf HY53C464LF70 HY53C464S An-313

    HY53C464LS

    Abstract: HY53C464 HY53C464S hy53c464lf HY53C464LF70
    Text: •HYUNDAI HY53C464 Series SEMICONDUCTOR 64Kx 4-bit CMOS DRAM DESCRIPTION The HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


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    PDF HY53C464 330mil 18pin 1AA02-20-APR93 300BSC HY53C464LS HY53C464S hy53c464lf HY53C464LF70

    hy53c464ls

    Abstract: A211D HY53C464LF70 hy53c464 hvof
    Text: HY53C464 Series “H Y U N D A I 64Kx 4-bit CMOS DRAM DESCRIPTION The HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


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    PDF HY53C464 330mil 18pin 335f8 1AA02-20-MAY94 HY53C464S hy53c464ls A211D HY53C464LF70 hvof

    LH2464-10

    Abstract: HY53C464-10 LH2464-12 M5M4464P-12 41464 21464-12 HY53C464-12 HY53C464-70 lh2464 50464cp
    Text: 193 - 2 5 6 K SL £ tt « fa« ® oc> X A nMOS Dynamic • ■ / + > ? Wr TRAC ■ax ns TRCY ■in (ns) TCAD min (ns) TAH min (ns) TP nin (ns) RAM (6 5 5 3 6 X 4 ) ft WCY ■in (ns) * TDH nin (ns) TRWC lin (ns) V D D or V C C (V) IDD max (■A) 18PIN K


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    PDF 18PIN GM71C464-10 M5M4464AP/AJ/AL-12 M5M4464AP/AJ/AL-15 M5M4464AP/AJ/AL-8 M5M4464P-12 M5M4464P-15 H5M4464 LH2464-10 HY53C464-10 LH2464-12 41464 21464-12 HY53C464-12 HY53C464-70 lh2464 50464cp

    HY53C464LS

    Abstract: LASCR HY53C464S HY53C464 MCS131 MAY94 HY53C464LF HY53C464LS70 hy53c464lf70
    Text: HY53C464 Series »HYUNDAI 64K X 4-bit CMOS DRAM DESCRIPTION The HY53C464 is feist dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


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    PDF HY53C464 330mil 18pin 1AA02-20-MAY94 4b750flà HY53C464S HY53C464LS LASCR MCS131 MAY94 HY53C464LF HY53C464LS70 hy53c464lf70

    HY53C464-70

    Abstract: No abstract text available
    Text: „v Hyundai < * HY53C464 S EM IC O N D U C TO R 1 1 M 1 2 1 2 0 1 A -A P R 9 1 DESCRIPTION FEATURES The HY53C464 is a high speed 65,536X4 bit CM OS dynamic random access memory. Fabricated with HYUNDAI CM OS techno­ logy, the HY53C464 offers a fast page mode


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    PDF HY53C464 HY53C464 536X4 HY53C464L) HY53C464-70