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    Z38B

    Abstract: 0D51 D27ID ITD014
    Text: ’H Y U N D A I HY52V255B Series _ 3 2 K w B - b l t CM 0 5 5 RAM PRELIMINARY DESCRIPTION The HYB2V256B is ahigh-spsed, low power and 32,758 x B-bits CMOS static RAM fabricated using Hyundai's high pBrformancB twin lub CMOS prnCBss technology. The HY52V256B has a data retention modB that guarantees


    OCR Scan     		PDF HY52V255B HYB2V256B HY52V256B 55/70/B5/1 -100/120/150/200ns po319IB D27ID 1DCD6-11-MAYB4 HY62V255B Z38B 0D51 ITD014

    Untitled

    Abstract: No abstract text available
    Text: HY UNDAI QUI CH REFERENCE SHAM ORGANIZATION PAHT NUMBER SPEED |ns 54Kbit I BM x B ) HYB254AP HYB2B4ALP HY6254ALLP HYB254AJ HYBZ54AU HYB2B4ALU HY52B4ALP-I HY5264ALLP-I HY5254AU-I HYB254ALU-I HYB2256AP HY52256ALP HY52255ALLP HYB2256AJ HYB225BAU HY52Z56ALU HYB2256AT1


    OCR Scan     		PDF 54Kbit HYB254AP HY6254ALLP HYB254AJ HYBZ54AU HY52B4ALP-I HY5264ALLP-I HY5254AU-I HYB254ALU-I HYB2256AP

    Q346

    Abstract: No abstract text available
    Text: HY62V256 Series HYUNDAI 32K N B-bit CMOS SRAM DESCRIPTION The HY6ZV256 is a high-speed, Idw power and 32,758 x 9-bits CMOS static RAM Fabricated using Hyundai's high performance twin tub CMOS process technology. The HY62V255 has a data retention modB that guarantees data


    OCR Scan     		PDF HY62V256 HY6ZV256 HY62V255 HY52VZ56 55/70/B5/1 DO/120/150ns 319IB 1DCD3-11-MAY94 HY52V255 HYBZV256LP Q346