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    Untitled

    Abstract: No abstract text available
    Text: HYM5V64414B N-Series Buffered 4Mx64 bit EDO DRAM MODULE based on 4Mx4 DRAM, 3.3V, 2K-Refresh GENERAL DESCRIPTION The HYM5V64414B N-Series is a 4Mx64-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY51V17404B in 24/26 pin SOJ or TSOP-II and two 16-bit BiCMOS line driver in TSSOP on a 168


    Original     		PDF HYM5V64414B 4Mx64 4Mx64-bit HY51V17404B 16-bit HYM5V64414BNG/BTNG 168-Pin

    Untitled

    Abstract: No abstract text available
    Text: HYM5V72A414B K-Series Unbuffered 4Mx72 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 3.3V, 2K-Refresh GENERAL DESCRIPTION The HYM5V72A414B K-Series is a 4Mx72-bit Extended Data Out mode CMOS DRAM module consisting of eighteen HY51V17404B in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy


    Original     		PDF HYM5V72A414B 4Mx72 4Mx72-bit HY51V17404B HYM5V72A414BKG/BTKG 168-Pin

    HY51V17404B

    Abstract: 4mx4
    Text: HY51V17404B,HY51V16404B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original     		PDF HY51V17404B HY51V16404B 4mx4

    Untitled

    Abstract: No abstract text available
    Text: HYM5V72A414B N-Series Buffered 4Mx72 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 3.3V, 2K-Refresh GENERAL DESCRIPTION The HYM5V72A414B N-Series is a 4Mx72-bit Extended Data Out mode CMOS DRAM module consisting of eighteen HY51V17404B in 24/26 pin SOJ or TSOP-II and two 16-bit BiCMOS line driver in TSSOP on a 168


    Original     		PDF HYM5V72A414B 4Mx72 4Mx72-bit HY51V17404B 16-bit HYM5V72A414BNG/BTNG 168-Pin

    HY51V17404

    Abstract: HYM5V64414B
    Text: HYM5V64414B K-Series Unbuffered 4Mx64 bit EDO DRAM MODULE based on 4Mx4 DRAM, 3.3V, 2K-Refresh GENERAL DESCRIPTION The HYM5V64414B K-Series is a 4Mx64-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY51V17404B in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy


    Original     		PDF HYM5V64414B 4Mx64 4Mx64-bit HY51V17404B HYM5V64414BKG/BTKG 168-Pin HY51V17404

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    gi115

    Abstract: No abstract text available
    Text: -«YUNDWI — • H Y M 5 V 6 4 4 1 4 B K - S e r ie s Unbuffered 4Mx64 bit EDO DRAM MODULE based on 4Mx4 DRAM, 3.3V, 2K-Refresh GENERAL DESCRIPTION The HYM 5V64414B K-Series is a 4Mx64-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY51V17404B in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy


    OCR Scan     		PDF 4Mx64 5V64414B 4Mx64-bit HY51V17404B HYM5V64414BKG/BTKG 168-Pin 256OOK 64414B j4-/-noc44 gi115

    hyundai hy 214

    Abstract: UL-96 SH17 wl33
    Text: • HYUNDAI HY51V17404B, HY51V16404B 4M x 4-bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION T his fa m ily is a 16M bit dynam ic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out m ode CM O S DRAMs. Extended Data Out mode


    OCR Scan     		PDF HY51V17404B, HY51V16404B HY51V17404BJ HY51V17404BSLJ HY51V17404BT HY51V17404BSLT HY51V16404BJ HY51V16404BSLJ HY51V16404BT HY51V16404BSLT hyundai hy 214 UL-96 SH17 wl33

    DG37

    Abstract: No abstract text available
    Text: -H Y U N D A I ^ - J • HYM5V72A414A K-Series 4Mx72-bit CMOS DRAM MODULE Unbuffered with EXTENDED DATA OUT DESCRIPTION The HYM5V72A414A is a 4M x 72-bit EDO mode CMOS DRAM module consisting of eighteen HY51V17404B in 24/26 pin SOJ orTSOPII and one 2048 bit EEPROM on a 168 pin glass-epoxy printed


    OCR Scan     		PDF HYM5V72A414A 4Mx72-bit 72-bit HY51V17404B HYM5V72A414AKG/ATKG/ASLKG/ASLTKG 225i5 72jMiK 4Mx72-btt HYM5V72A414AKG DG37

    HY51V17404B

    Abstract: No abstract text available
    Text: “H Y U N D A I HY51V17404B Series 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY51V17404B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17404B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V17404B HY51V17404B 1AD52-10-MAY95 HY51V17404BJ HY51V17404BSLT HY51V17404BT

    Untitled

    Abstract: No abstract text available
    Text: C "HYUNDAI • HY51V17404B.HY51 V16404B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    OCR Scan     		PDF HY51V17404B V16404B A0-A11)

    HY5118164B

    Abstract: hy5118160b HY5118160 HY51V65400TC HY5117804B
    Text: DRAM PRODUCT 16Mbit As of '96.3Q DESCRIPTION PART NO. 4M x 4 EDO,2< Ref. 3.3V PACKAGE OPTION ACCESS TIME ns OPERATING CURRENT (mA.MAX) STANDBY CURRENT (mA,MAX) TTL CMOS AVAILABILITY HY51V17404A SO JJSO P I (300mil) 60/70/80 120/100/90 l 0.5 NOW HY51V17404B


    OCR Scan     		PDF 16Mbit HY51V17404A HY51V17404B 300mil) 400mil) HY5118164B hy5118160b HY5118160 HY51V65400TC HY5117804B

    WAOQ

    Abstract: HY51V174 HY51V17404BJ
    Text: HY51V17404B Series •HYUNDAI 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION T h e H Y 5 1 V 1 7 4 0 4 B is the n ew g e n e ra tio n a nd fa s t d y n a m ic R A M org a n ize d 4 ,1 9 4 ,3 0 4 x 4-bit. T h e H Y 5 1 V 1 7 4 0 4 B utiliz e s H y u n d a i's C M O S s ilicon g a te p ro ce ss te c h n o lo g y as w e ll a s a d va n ce d circu it te c h n iq u e s to p rovide w ide


    OCR Scan     		PDF HY51V17404B D52-10-M HY51V17404BJ HY51V17404BSLT HY51V174 HY51V17404BR HY51V17404BSLR 1AD52-10-M WAOQ

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 V 1 7 4 0 4 B ,H Y 5 1 V 1 6 4 0 4 B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    OCR Scan     		PDF

    VG264265B

    Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
    Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D


    OCR Scan     		PDF 256kxl6 256kxl6, VG264265B HM514265D HY514264B MT4C16270 uPD4244265LE KM416C254D TC5144265D TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference

    BEDO RAM

    Abstract: hy5118160b HY512264 HY5117404 HY5118164B
    Text: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE


    OCR Scan     		PDF HY531000A. HY534256A. 16-bit. HY5216257. x16-bit. DB101-20-MAY95 BEDO RAM hy5118160b HY512264 HY5117404 HY5118164B

    AUO-PL321.60

    Abstract: HY51V18164B HY514264 HY514260
    Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP


    OCR Scan     		PDF HY531000AS HY531000ALS HY531000AJ HY531000ALJ HY534256AS HY534256ALS HY534256AJ HY534256ALJ HY512260JC HY512260LJC AUO-PL321.60 HY51V18164B HY514264 HY514260

    HY51V18164

    Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
    Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC


    OCR Scan     		PDF 256Kx4) 256x8) 128Kx16) HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY51V18164 HY5118164 HY514260 HY51V65400 HY51V17804CJ

    HY514260

    Abstract: HY5118160 HY5116160 HY5117404 HY51V65400 HY511616
    Text: •'HYUNDAI — • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUIC REFERENCE DRAM Part Numbering Ordering Information 3. DRAM DATA SHEETS 1M-bit DRAM Page HY531000A. 1M x1-bit, 5V, F P .


    OCR Scan     		PDF HY531000A. HY534256A. 256Kx4-bit, HY512260. 128KX16-bit, HY514260 HY5118160 HY5116160 HY5117404 HY51V65400 HY511616