HY51C4256

Abstract: block diagram of vu meter HY51C4254-10
Contextual Info: M• ■ HY51C4256 R Hyundai SEMICONDUCTOR A M151201B—APR91 DESCRIPTION FEATURES The HY51C4256 is a high speed, low power 262,144 X 4 CM OS dynamic random access memory. Fabricated with HYUNDAI CMOS technology, HY51C4256 offers a fast page m ode for high data bandw idth, fast usable

Contextual Info: PRELIMINARY / a m h v u n d a i SEMICONDUCTOR HY51C4256/L X DESCRIPTION T h e H Y 5 1 C 4 2 5 6 /L is a h ig h sp eed , low pow er 2 6 2 ,1 4 4 x 4 C M O S d y n a m ic ra n d o m access m em ory. F a b ric a te d w ith H Y U N D A I C M O S tech n o lo g y , H Y 5 1 C 4 2 5 6 /L o ffe rs a fa st p ag e

hy51c4256

Abstract: HY51C4256-10 51c4256 soj16 51C4 HY51C4256-12
Contextual Info: „ H H « y u n d a HY51C4256 i SEMICONDUCTOR A A A M151201B—APR91 DESCRIPTION FEATURES The HY51C4256 is a high speed, low power 262,144 X 4 CMOS dynamic random access memory. Fabricated with HYUNDAI CMOS technology, HY51C4256 offers a fast page mode for high data bandwidth, fast usable

m514256

Abstract: m514256a M514256AP hy51c4256 HY51C4256-10 20PIN AAA1M104-12 AAA1M204-07 AAA1M204-08 EDI44256C-120
Contextual Info: - 211 IM CMOS X D y n a m i c 4 •; * RA M 2 6 21 4 4 x 4 > 7 ft ü m iäSicH m ä tt £ CC) TRAC max (ns) TRCY rain (ns) TCAD min (ns) TAH nin (ns) TP min (ns) TWCY min (ns) TDH min (ns) TRWC min (ns) V D D or V C C (V) 2 0 P I N A m I DD max (mA) I DD STANDBY