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    Abstract: No abstract text available
    Text: •HYUNDAI HY 514370_Series SEMICONDUCTOR 256K xi6-b# cm os d ra m with 2 w e & w pb PRELIMINARY DESCRIPTION The HY514370 Is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access


    OCR Scan     		PDF HY514370 16-bit 400mii 40pin 40/44pin 1AC10-00-APR93 HY514370JC HY514370SLJC

    Untitled

    Abstract: No abstract text available
    Text: “ H Y U N D A I SEMICONDUCTOR H Y 5 1 4 3 7 0 S e r ie s with 2 w e 256K x i e-bit c m o s d ra m & wpb PRELIMINARY DESCRIPTION The HY514370 Is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access


    OCR Scan     		PDF HY514370 16-bit 400mil 40pin 40/44pin 1AC10-00-APR93 4b750Ã HY514370JC