Untitled
Abstract: No abstract text available
Text: HY4N60D / HY4N60M 600V / 4.0A 600V, RDS ON =2.4Ω@VGS=10V, ID=2.0A N-Channel Enhancement Mode MOSFET Features • • • • • • Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS
|
Original
|
PDF
|
HY4N60D
HY4N60M
2002/95/EC
O-251
O-252
O-252
ITO-251
MIL-STD-750
HY4N60D
4N60D
|
Untitled
Abstract: No abstract text available
Text: HY4N60D / HY4N60M 600V / 4.0A 600V, RDS ON =2.4Ω@VGS=10V, ID=2.0A N-Channel Enhancement Mode MOSFET Features • • • • • • Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS
|
Original
|
PDF
|
HY4N60D
HY4N60M
2002/95/EC
O-251
O-252
O-252
ITO-251
MIL-STD-750
HY4N60D
4N60D
|