Untitled
Abstract: No abstract text available
Text: HXSR01608 HXSR01608 2M x 8 STATIC RAM The monolithic, radiation hardened 16M bit Static proprietary design, layout and process hardening Random Access Memory SRAM in a 2M x 8 techniques. There is no internal EDAC implemented. configuration is a high performance 2,097,152 word x
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HXSR01608
HXSR01608
150nm
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HXSR01608
Abstract: No abstract text available
Text: HXSR01608 HXSR01608 2M x 8 STATIC RAM The monolithic, radiation hardened 16M bit Static proprietary design, layout and process hardening Random Access Memory SRAM in a 2M x 8 techniques. There is no internal EDAC implemented. configuration is a high performance 2,097,152 word x 8
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HXSR01608
HXSR01608
150nm
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HXSR01608
Abstract: DSASW004792 honeywell memory sram S150
Text: HXSR01608 2M x 8 STATIC RAM 40 LEAD FLAT PACK PINOUT Features n Fabricated on S150 SiliconOn-Insulator SOI CMOS n 150 nm Process (Leff = 110 nm) n Read Cycle Times Typical ≤13 ns Worst case ≤ 20 ns n Write Cycle Times Typical ≤ 9 ns Worst case ≤ 12 ns
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HXSR01608
1X106
1x10-12
2x10-12
1x1014
1x1010
1x1012
XXX-XXXX-000-000
HXSR01608
DSASW004792
honeywell memory sram
S150
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HXSR01608
Abstract: No abstract text available
Text: HXSR01608 2M x 8 STATIC RAM The monolithic 2M x 8 Radiation Hardened Static RAM is a high performance 2,097,152 word x 8-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low
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HXSR01608
150nm
ADS-14155
HXSR01608
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HLXSR01608
Abstract: No abstract text available
Text: HLXSR01608 HLXSR01608 2M x 8 STATIC RAM 1.5V Core VDD The HLXSR01608 radiation hardened 16Mbit Static proprietary design, layout and process hardening Random Access Memory SRAM is a monolithic techniques. There is no internal EDAC implemented. SRAM fabricated with Honeywell’s 150nm silicon-oninsulator CMOS (S150) technology. The 2M x 8 bit
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HLXSR01608
HLXSR01608
16Mbit
150nm
110mW
40MHz
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Untitled
Abstract: No abstract text available
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Made changes to Table IA, parameters: IDDDOP3 , IDDDOP1, IDDDOPW1, IDDOPW40, IDDDOPW40, IDDOPR1, IDDDOPR1, IDDOPR40, IDDDOPR40, CINA, CINC. ksr 08-12-12 Robert M. Heber B Made changes to Table IA, parameters: Standby current CS disabled
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IDDOPW40,
IDDDOPW40,
IDDOPR40,
IDDDOPR40,
MIL-PRF-38535
andLXSR01608-AQH
5962H0820202VXC
HLXSR01608-AVH
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TSMC 0.18 um MOSfet
Abstract: M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221
Text: DSCC Supplemental Information Sheet for Electronic QML-38535 Specification Details: Date: 9/2/2008 Specification: MIL-PRF-38535 Title: Advanced Microcircuits Federal Supply Class FSC : 5962 Conventional: No Specification contains quality assurance program: Yes
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QML-38535
MIL-PRF-38535
MIL-STD-790
MIL-STD-690
-581DSCC
QML-38535
TSMC 0.18 um MOSfet
M38510 10102BCA
IDT7204L
5962-8768401MQA
0.18um LDMOS TSMC
sl1053
TSMC 0.25Um LDMOS
UT63M125BB SMD
RTAX250S-CQ208
5962-04221
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5962L0053605VYC
Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
Text: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A
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MIL-HDBK-103AJ
MIL-HDBK-103AH
MIL-HDBK-103AJ
5962L0053605VYC
5962-9069204QXA
ATMEL 302 24C16
UT9Q512E-20YCC
MOH0268D
UT54ACS164245SEIUCCR
Z085810
5962-9762101Q2A
UT28F256QLET-45UCC
5962R0250401KXA
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