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    Semtech Corporation SHVM10

    DIODE GEN PURP 10KV 500MA MODULE
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    Semtech Corporation S2HVM10

    DIODE GEN PURP 10KV 1.2A MODULE
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    Semtech Corporation S3HVM10

    DIODE GEN PURP 10KV 1.2A MODULE
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    Semtech Corporation SHVM10F

    A 1PHHW 350MA FAST 10KV - Bulk (Alt: SHVM10F)
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    Rectron Semiconductor HVM10

    Rectifiers HVM 0.35A 10KV RECT
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    Onlinecomponents.com HVM10
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    HVM10 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HVM10 DC Components TECHNICAL SPECIFICATIONS OF HIGH VOLTAGE ASSEMBLIED RECTIFIER Original PDF
    HVM10 Leshan Radio Company HIGH-VOLTAGE DIODES Original PDF
    HVM10 Rectron Semiconductor HIGH VOLTAGE ASSEMBLIED RECTIFIER Original PDF
    HVM10 Rectron Semiconductor HIGH VOLTAGE ASSEMBLIED RECTIFIER (VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.35 Amperes) Original PDF
    HVM10 Sensitron Semiconductor HIGH VOLTAGE RECTIFIER Original PDF
    HVM10 CEIEC Rectifier Diode: Single: 10000V: HVM: 2-Pin Scan PDF
    HVM100 Hitachi Semiconductor Silicon Epitaxial Planar Diode for High Voltage Switching Original PDF
    HVM10000 Sino-American Silicon Products 550mA Iout, 10kV Vrrm General Purpose Silicon Rectifier Scan PDF
    HVM10L Rectron Semiconductor HIGH VOLTAGE ASSEMBLIED RECTIFIER VOLTAGE RANGE 10000 Volts CURRENT 0.35 Amperes Original PDF

    HVM10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HVM100 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-470 Z Rev 0 Features • • • • High capacitance ratio. (n = 16.0 min) High figure of merit. (Q = 200 min) To be usable at low voltagee. MPAK package is suitable for high density surface mounting and high speed assembly.


    Original     		PDF HVM100 ADE-208-470 HVM100 450pF, 200pF

    Hitachi DSA001653

    Abstract: No abstract text available
    Text: HVM100 Silicon Epitaxial Planar Diode for AM tuner ADE-208-470A Z Rev. 1 Sept. 1, 1998 Features • • • • High capacitance ratio. (n =16.0 min) High figure of merit. (Q =200 min) To be usable at low voltage. MPAK package is suitable for high density surface mounting and high speed assembly.


    Original     		PDF HVM100 ADE-208-470A Hitachi DSA001653

    HVM100

    Abstract: SC-59A vr15a Hitachi DSA00302
    Text: HVM100 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-470 Z Rev 0 September 1996 Features • • • • High capacitance ratio. (n =16.0 min) High figure of merit. (Q =200 min) To be usable at low voltagee. MPAK package is suitable for high density surface mounting and high speed assembly.


    Original     		PDF HVM100 ADE-208-470 SC-59A HVM100 SC-59A vr15a Hitachi DSA00302

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI HVIGBT MODULES Prepared by S. Iura Revision: 1.1 Approved by H. Yamaguchi : Apr. 2009 CM1200HC-90R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HC-90R ● IC ………………………


    Original     		PDF CM1200HC-90R HVM-1057-A

    MT 2800 N

    Abstract: D 1062 transistor CM800HG-90R
    Text: Prepared by S. Iura Approved by H. Yamaguchi : Jul. 2010 MITSUBISHI HVIGBT MODULES Revision: 1.0 CM800HG-90R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800HG-90R ● IC ………………………


    Original     		PDF CM800HG-90R HVM-1062 MT 2800 N D 1062 transistor CM800HG-90R

    D 1062 transistor

    Abstract: HVM-1062
    Text: CONFIDENTIAL MITSUBISHI HVIGBT MODULES Prepared by S. Iura Revision: 1.0 Approved by H. Yamaguchi : Jul. 2010 CM800HG-90R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE COMPANY PROPRIETARY


    Original     		PDF CM800HG-90R HVM-1062 D 1062 transistor HVM-1062

    2x062h

    Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
    Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1


    Original     		PDF ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062

    CM400HG130H

    Abstract: No abstract text available
    Text: CONFIDENTIAL Revision: A Prepared by K.Kurachi Approved by I.Umezaki Mar.-1-2011 MITSUBISHI HVIGBT MODULES CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE rd 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules COMPANY PROPRIETARY


    Original     		PDF CM400HG-130H HVM-1045-A CM400HG130H

    CM1500HG-66R

    Abstract: cm1500hG CM1500HG -66R
    Text: MITSUBISHI HVIGBT MODULES Prepared by S. Iura Revision: 1.1 Approved by H. Yamaguchi : Apr. 2009 CM1500HG-66R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1500HG-66R ● IC ………………………


    Original     		PDF CM1500HG-66R HVM-1059 CM1500HG-66R cm1500hG CM1500HG -66R

    1035 transistor

    Abstract: No abstract text available
    Text: CONFIDENTIAL Revision: C Prepared by S.Iura Date I.Umezaki 5-Sep.-2011 MITSUBISHI HVIGBT MODULES CM2400HC-34N th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor MODULES HIGH POWER SWITCHING USE INSULATED TYPE COMPANY PROPRIETARY NOT TO BE REPRODUCED OR DISCLOSED WITHOUT SPECIFIC


    Original     		PDF CM2400HC-34N HVM-1035-C 1035 transistor

    Untitled

    Abstract: No abstract text available
    Text: R oH S C om plian t HIGH VOLTAGE RECTIFIERS PLASTIC MATERIAL HAS UL 94V-0 CLASSIFICATION o o OPERATING AND STORAGE TEMPERATURE -55 C to +150 C TYPE Maximum Peak Reverse Voltage PRV VPK Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz Maximum


    Original     		PDF VOLTAGE/DO-15 R2500 R3000 R4000 R5000 VOLTAGE/DO-41 R1200F R1500F R1800F R2000F

    CM1000HC-66R

    Abstract: 1061 transistor HVIGBT transistor h 1061
    Text: < HVIGBT MODULES > CM1000HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1000HC-66R       IC •······························································ 1000A


    Original     		PDF CM1000HC-66R HVM-1061-B HVM-1061-B) CM1000HC-66R 1061 transistor HVIGBT transistor h 1061

    501c1

    Abstract: No abstract text available
    Text: ISDN SO DIL Interface Modules Features • excellent output characteristics ensures compliance with CCITT.I.430 pulse waveform template when used with recommended IC pairing • excellent and consistent balance between windings • operating temperature: 0 to 70°C


    Original     		PDF IEC950 EN60950, UL1950 UL1459 501c1

    CM400HG-130H

    Abstract: cm400hg-130 CM400HG130H cm400hg
    Text: MITSUBISHI HVIGBT MODULES Prepared by K.Kurachi Approved by I.Umezaki Mar.-1-2011 Revision: A CM400HG-130H rd 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400HG-130H ●IC ……………………… 400 A


    Original     		PDF CM400HG-130H HVM-1045-A CM400HG-130H cm400hg-130 CM400HG130H cm400hg

    CM750HG-130R

    Abstract: No abstract text available
    Text: < HVIGBT MODULES > CM750HG-130R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM750HG-130R z z z z z z IC•····························································


    Original     		PDF CM750HG-130R HVM-1058-B) CM750HG-130R

    Untitled

    Abstract: No abstract text available
    Text: < HVIGBT MODULES > CM1000HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1000HC-66R       IC •······························································ 1000A


    Original     		PDF CM1000HC-66R HVM-1061-B HVM-1061-B)

    Untitled

    Abstract: No abstract text available
    Text: < HVIGBT MODULES > CM1200HC-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1200HC-90R       IC •······························································· 1200A


    Original     		PDF CM1200HC-90R HVM-1057-E

    HVM12 350

    Abstract: HVM12 HVM10 diode HVM12 HVM15 HVM14 HVM16
    Text: HVM5 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION HVM16 HIGH VOLTAGE ASSEMBLIED RECTIFIER VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.35 Amperes FEATURES * * * * * * Low cost Low leakage Isolated case Surge overload rating - 50 amperes peak Mounting position: Any


    Original     		PDF HVM16 HVM10 HVM12 HVM14 HVM15 -20oC 135oC HVM12 350 HVM12 HVM10 diode HVM12 HVM15 HVM14 HVM16

    LT 5246

    Abstract: HVM100 SC-59A hitachi product ordering
    Text: HVM100 Silicon Epitaxial Planar Diode for AM tuner HITACHI ADE-208-470A Z Rev. 1 Sept. 1, 1998 Features • High capacitance ratio, (n =16.0 min) • High figure of merit. (Q =200 min) • To be usable at low voltage. • MPAK package is suitable for high density surface mounting and high speed assembly.


    OCR Scan     		PDF HVM100 ADE-208-470A HVM100 LT 5246 SC-59A hitachi product ordering

    lola

    Abstract: HVM12
    Text: HIGH VOLTAGE ASSEMBLIED RECTIFIERS 0.35 AMPERE TO 0.75 AMPERE 5K VOLTS TO 16K VOLTS S\ ^ - - ^ P R V IV \ T Y P E N O ''''- '- 5KV 8KV 10KV 12KV 14KV 15KV 16KV CASE lolA) \ 0.35 HVM5 HVM8 HVM10 HVM12 HVM14 HVM15 HVM16 HVM 0.75 HVP5 HVP8 HVP10 HVP12 HVP14


    OCR Scan     		PDF HVM10 HVP10 HVM12 HVP12 HVM14 HVP14 HVM15 HVP15 HVM16 HVP16 lola

    Untitled

    Abstract: No abstract text available
    Text: HITACHI HVM100 Silicon Epitaxial Planar Diode for High Voltage Switching HITACHI ADE-208-470 Z Rev 0 September 1996 Features • High capacitance ratio, (n = 16.0 min) • High figure o f merit. (Q = 200 min) • To be usable at low voltagee. • M PAK package is suitable for high density surface m ounting and high speed assembly.


    OCR Scan     		PDF HVM100 ADE-208-470 SC-59A

    HVM16L

    Abstract: HVM12
    Text: HIGH VOLTAGE RECTIFIERS Io A PACKAGE \ 0.35 0.35 0.75 HVM-L HVM HVP —1.2 O U T L IN E V m m /T y p .) 18.5 V rrm \ (V o lts) J 1 a 4 40 H e 1 h 7 .0 \ 1 h - M . . HVM8L HVM8 HVP8 10000 HVM10L HVM 10 HVP10 12000 HVM12L HVM 12 HVP 12 14000 HVM14L HVM 14


    OCR Scan     		PDF HVM10L HVM12L HVM14L HVM15L HVM16L HVP10 HVM16L HVM12

    Untitled

    Abstract: No abstract text available
    Text: H OlM EYüJELL/SS ELEK-, M IL 03 D Ë| 4551Ö72 DDGG3].t □ T -9 2 -//-Û 7 Honeywell Radiation Hardened Bipolar Gate Array Family " Preliminary HM3500R, HVM10000R Family Features • Strategic Radiation Hardness Allows Spaced Based System Operations • Broad Performance Optimized Family Allows Flexible


    OCR Scan     		PDF HM3500R, HVM10000R to172 148-Pin 244-Pin M2010, M2023 M1008,

    L42n

    Abstract: HM3500 adb 630 L43n "alu 4 bit" ECL IC NAND L44N PT06-16-8P-S/transistor 03e
    Text: H0NEYWE1_I_/SS ELEK-, MIL [13 I>e | 4551872 DD00212 D • “ H o n eyw e ll r - n - ll'O HM3500, hvmioooo, HE12000 Preliminary ADVANCED DIGITAL BIPOLAR GATE ARRAY FAMILY FAMILY FEATURES • Broad Performance Optimized Family Allows Flexible System Partitioning:


    OCR Scan     		PDF DD00212 HM3500, HE12000 ECL10K/KH/100K 148-Pin MIL-M-38510/600 MIL-STD-883C L42n HM3500 adb 630 L43n "alu 4 bit" ECL IC NAND L44N PT06-16-8P-S/transistor 03e