Untitled
Abstract: No abstract text available
Text: HUF4410DY S E M I C O N D U C T O R ADVANCE INFORMATION 10A, 30V, 0.0135 Ohm, N-Channel, Logic Level Power MOSFET December 1997 Features Description • Logic Level Gate Drive This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the
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HUF4410DY
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Untitled
Abstract: No abstract text available
Text: HUF4410DY HARRIS S E M I C O N D U C T O R ADVANCE INFORMATION 10A, 30V, 0.0135 Ohm, N-Channel, Logic Level Power MOSFET December 1997 Features Description • Logic Level Gate Drive This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the
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HUF4410DY
00A/HS
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ns802
Abstract: No abstract text available
Text: HUF4410DY HARRIS S E M I C O N D U C T O R ADVANCE INFORMATION 10A, 30V, 0.0135 Ohm, N-Channel, Logic Level Power MOSFET December 1997 Features Description • Logic Level Gate Drive This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the
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HUF4410DY
ns802
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20KSl
Abstract: 44681
Text: a HUF4410DY HARRIS S E M I C O N D U C T O R ADVANCE INFORMATION 10A, 30V, 0.0135 Ohm, N-Channel, Logic Level Power MOSFET December 1997 Features Description • Logic Level Gate Drive This power MOSFET is m anufactured using an innovative process. This advanced process technology achieves the
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OCR Scan
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HUF4410DY
020S2
TB334,
00A/H
20KSl
44681
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