IC350
Abstract: 6718t
Text: HI-SINCERITY Spec. No. : HT200701 Issued Date : 2007.08.01 Revised Date : 2007.08.09 Page No. : 1/5 MICROELECTRONICS CORP. H2N6718T NPN Epitaxial Planar Transistor Description TO-126 The H2N6718T is designed for general purpose medium power amplifier and switching.
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Original
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HT200701
H2N6718T
O-126
H2N6718T
183oC
217oC
240oC
260oC
10sec
IC350
6718t
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PDF
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ht2000
Abstract: HTMOS HT2160 HT-2000 HT2007
Text: HTMOSTM High Temperature Products Preliminary HIGH TEMPERATURE GATE ARRAYS HT2000 FAMILY FEATURES APPLICATIONS • Specified -55 to +225°C, Operation to +300°C • Down-Hole Oil Well • Fabricated with HTMOS 0.65 µm Process • Avionics • 7K or 160K Available Gates Raw
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Original
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HT2000
HT2000
208-pin
HTMOS
HT2160
HT-2000
HT2007
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PDF
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E3081
Abstract: HT2080 CINOX OSCILLATOR CMOS technology length 0.4um 12GE 88Au HT1104HZ HT2160 IC CD4066 quad bilateral switch HTMOS
Text: High Temperature Electronics for Sensor Interface and Data Acquisition Sensors Expo, October 7, 1998 Jay Goetz – Applications Engineer Honeywell SSEC 12001 St Hwy 55 Plymouth MN 55441 612 954-2520 jay.goetz@corp.honeywell.com Introduction High Temperature designs need components rated to operate in the harsh environment in which they will be
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Original
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Report-1997,
E3081
HT2080
CINOX OSCILLATOR
CMOS technology length 0.4um
12GE
88Au
HT1104HZ
HT2160
IC CD4066 quad bilateral switch
HTMOS
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PDF
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Untitled
Abstract: No abstract text available
Text: Honeywell HTM O S High Temperature Products Advance Information HTMOS™ GATE ARRAYS HT2000 FAMILY FEATURES APPLICATIONS • Specified -55 to +225°C, Operation to +300°C • Down-Hole Oil Well • Fabricated with HTMOS™ 0.65 j.m Process • Avionics
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OCR Scan
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HT2000
HT2000
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PDF
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HTMOS
Abstract: HT-216
Text: Honeywell H T M O S High T em perature Products Preliminary HIGH TEMPERATURE GATE ARRAYS HT2000 FAMILY FEATURES APPLICATIONS • Specified -55 to +225°C • Down-Hole Oil Well • Fabricated with HTMOS™ 0.65 |im Process • Avionics • 7K or 160K Available Gates Raw
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OCR Scan
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HT2000
HT2000
HT2007PÇ
HTMOS
HT-216
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PDF
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