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    EV-HT-200CDAQ1 Analog Devices Reference Design Platform Kit Visit Analog Devices Buy
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    HT200 Price and Stock

    Bourns Inc MF-RHT200-0

    PTC RESET FUSE 16V 2A RADIAL
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    DigiKey MF-RHT200-0 Bulk 7,495 1
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    Avnet Americas MF-RHT200-0 Bulk 37,500 4 Weeks 500
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    Newark MF-RHT200-0 Bulk 2,097 5
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    RS MF-RHT200-0 Bulk 7 Weeks 3,000
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    Bristol Electronics MF-RHT200-0 27 7
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    Avnet Abacus MF-RHT200-0 7 Weeks 3,000
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    Master Electronics MF-RHT200-0 2,893
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    Bourns Inc MF-RHT200/32-AP

    PTC RESET FUSE 32V 2A RADIAL
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    DigiKey MF-RHT200/32-AP Bulk 3,894 1
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    Avnet Americas MF-RHT200/32-AP Ammo Pack 4 Weeks 4,000
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    Mouser Electronics MF-RHT200/32-AP 3,327
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    Newark MF-RHT200/32-AP Bulk 4,000
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    Avnet Abacus MF-RHT200/32-AP 7 Weeks 4,000
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    Master Electronics MF-RHT200/32-AP
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    Bourns Inc MF-RHT200/32-2

    PTC RESET FUSE 32V 2A RADIAL
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    DigiKey MF-RHT200/32-2 Reel 3,000 3,000
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    MF-RHT200/32-2 Cut Tape 1,913 1
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    Avnet Americas MF-RHT200/32-2 Reel 4 Weeks 3,000
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    MF-RHT200/32-2 Ammo Pack 27 Weeks, 3 Days 1
    • 1 $0.645
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    • 100 $0.42
    • 1000 $0.384
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    Newark MF-RHT200/32-2 Cut Tape 3,888 1
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    TME MF-RHT200/32-2 3,000
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    Avnet Abacus MF-RHT200/32-2 Reel 7 Weeks 3,000
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    Master Electronics MF-RHT200/32-2 6,998
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    Bourns Inc MF-RHT200-2

    PTC RESET FUSE 16V 2A RADIAL
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    DigiKey MF-RHT200-2 Cut Tape 2,128 1
    • 1 $0.84
    • 10 $0.762
    • 100 $0.5252
    • 1000 $0.38077
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    Mouser Electronics MF-RHT200-2 4,943
    • 1 $0.59
    • 10 $0.557
    • 100 $0.339
    • 1000 $0.286
    • 10000 $0.229
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    Newark MF-RHT200-2 Bulk 1,566 5
    • 1 $0.601
    • 10 $0.534
    • 100 $0.454
    • 1000 $0.432
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    RS MF-RHT200-2 Bulk 7 Weeks 3,000
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    Avnet Abacus MF-RHT200-2 Reel 7 Weeks 3,000
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    Master Electronics MF-RHT200-2 12,000
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    Flip Electronics MHT2000GNR1

    IC RF AMP 2.45GHZ TO270
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    DigiKey MHT2000GNR1 Bulk 1,500 15
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    HT200 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HT200 FLIR Uncategorized - Miscellaneous - HEAT STRESS (WGBT) WET BULB GLOB Original PDF
    HT2000800000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Wire to Board - TERM BLOCK 20POS 45DEG 5MM PCB Original PDF
    HT-200-1/16-X-SP TE Connectivity Raychem Cable Protection Cables, Wires - Management - Heat Shrink Tubing - HEAT SHRINK TUBING CLEAR 1=1FT Original PDF
    HT-200-1/2-X-SP TE Connectivity Raychem Cable Protection Cables, Wires - Management - Heat Shrink Tubing - HEAT SHRINK 1/2" CLEAR 25FT Original PDF
    HT-200-1/4-X-SP TE Connectivity Raychem Cable Protection Cables, Wires - Management - Heat Shrink Tubing - HEAT SHRINK 1/4" CLEAR 25FT Original PDF
    HT-200-1/8-X-SP TE Connectivity Raychem Cable Protection Cables, Wires - Management - Heat Shrink Tubing - HEAT SHRINK 1/8" CLEAR 10FT Original PDF
    HT-200-1-X-SP TE Connectivity Raychem Cable Protection Cables, Wires - Management - Heat Shrink Tubing - HEATSHRINK 0.50" X 25" CLEAR Original PDF
    HT-200-3/16-X-SP TE Connectivity Raychem Cable Protection Cables, Wires - Management - Heat Shrink Tubing - HEAT SHRINK 3/16" CLEAR 1=500FT Original PDF
    HT-200-3/32-X-SP TE Connectivity Raychem Cable Protection Cables, Wires - Management - Heat Shrink Tubing - HEAT SHRINK 3/32" CLEAR 10FT Original PDF
    HT-200-3/4-X-SP TE Connectivity Raychem Cable Protection Cables, Wires - Management - Heat Shrink Tubing - HEAT SHRINK TUBING CLEAR 1=250FT Original PDF
    HT-200-3/64-X-SP TE Connectivity Raychem Cable Protection Cables, Wires - Management - Heat Shrink Tubing - HEAT SHRINK TUBING CLEAR 1=3000F Original PDF
    HT-200-3/8-X-SP TE Connectivity Raychem Cable Protection Cables, Wires - Management - Heat Shrink Tubing - HEAT SHRINK 3/8" CLEAR 5FT Original PDF
    HT2007 Honeywell HIGH TEMPERATURE GATE ARRAY Original PDF
    HT200-SBD Unknown STROMWNALDER 200A Original PDF
    HT200-SID Unknown STROMWNALDER 200A Original PDF
    HT200-SRID Unknown STROMWNALDER 200A Original PDF
    HT200-SRUD LEM Current Transducer Original PDF

    HT200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: APPROVAL PART NO. HT2002L DESCRITION LCD MODULE 176 x RGB × 220 Dots REMARKS This is ROHS compliant CUSTOMER APPLICATION P/N APPROVED BY DATE PLEASE KINDLY FIND AND APPROVE THE SPECIFICATIONS INSERTED HEREIN AND RETURN ONE COPY HERE OF WITH YOUR SIGNATURE OF APPROVAL.


    Original     		PDF HT2002L

    HT882

    Abstract: HT-88
    Text: HI-SINCERITY Spec. No. : HT200205 Issued Date : 1993.05.15 Revised Date : 2005.12.02 Page No. : 1/5 MICROELECTRONICS CORP. HT882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HT882 is designed for using in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver.


    Original     		PDF HT200205 HT882 HT882 O-126 183oC 217oC 260oC HT-88

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HT200210 Issued Date : 2001.01.01 Revised Date : 2009.04.17 Page No. : 1/5 MICROELECTRONICS CORP. HMJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


    Original     		PDF HT200210 HMJE13003 O-126 183oC 217oC 260oC 10sec

    TL 139

    Abstract: HT117 AH117
    Text: HI-SINCERITY Spec. No. : HT200207 Issued Date : 2002.04.01 Revised Date : 2004.10.01 Page No. : 1/4 MICROELECTRONICS CORP. HT117 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-126 The HT117 is designed for use in general purpose amplifier and low-speed switching applications.


    Original     		PDF HT200207 HT117 O-126 HT117 183oC 217oC 260oC TL 139 AH117

    HMJE200

    Abstract: HMJE210 o25c
    Text: HI-SINCERITY Spec. No. : HT200102 Issued Date : 2001.01.01 Revised Date : 2005.12.02 Page No. : 1/6 MICROELECTRONICS CORP. HMJE200 NPN Complementary Silicon Power Plastic Transistors HMJE210 PNP Complementary Silicon Power Plastic Transistors TO-126 Description


    Original     		PDF HT200102 HMJE200 HMJE210 O-126 500mA, 65MHz 100mA 100nA 183oC 217oC HMJE200 HMJE210 o25c

    HBD437T

    Abstract: HBD438T
    Text: HI-SINCERITY Spec. No. : HT200206 Issued Date : 2001.04.01 Revised Date : 2002.02.08 Page No. : 1/3 MICROELECTRONICS CORP. HBD438T COMPLEMENTARY SILICON POWER TRANSISTORS Description The HBD438T is silison epitaxial-base PNP power transistor in TO-126 plastic package, intented for use in medium power linear and switching


    Original     		PDF HT200206 HBD438T HBD438T O-126 HBD437T. t10ms) HBD437T

    HMJE13003T

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HT200211 Issued Date : 2000.08.01 Revised Date : 2002.05.08 Page No. : 1/3 HMJE13003T NPN EPITAXIAL PLANAR TRANSISTOR Description The HMJE13003T is designed for high voltage. High speed switching inductive circuits and amplifier applications.


    Original     		PDF HT200211 HMJE13003T HMJE13003T O-126

    HT112

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HT200101 Issued Date : 2000.05.01 Revised Date : 2003.01.04 Page No. : 1/4 MICROELECTRONICS CORP. HT112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HT112 is designed for use in general purpose amplifier and lowspeed switching applications.


    Original     		PDF HT200101 HT112 HT112 O-126

    649T

    Abstract: sb 649t HSB649T HT200103 sb649t
    Text: HI-SINCERITY Spec. No. : HT200103 Issued Date : 2001.12.01 Revised Date : 2005.12.02 Page No. : 1/4 MICROELECTRONICS CORP. HSB649T SILICON PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-126 Absolute Maximum Ratings TA=25°C


    Original     		PDF HT200103 HSB649T O-126 183oC 217oC 260oC 649T sb 649t HSB649T HT200103 sb649t

    LB122T

    Abstract: HLB122T to-126 npn switching transistor 400v
    Text: HI-SINCERITY Spec. No. : HT200208 Issued Date : 1998.07.01 Revised Date : 2005.12.02 Page No. : 1/4 MICROELECTRONICS CORP. HLB122T NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122T is a medium power transistor designed for use in switching


    Original     		PDF HT200208 HLB122T HLB122T O-126 183oC 217oC 260oC LB122T to-126 npn switching transistor 400v

    h437b

    Abstract: HBD437T HBD438T
    Text: HI-SINCERITY Spec. No. : HT200201 Issued Date : 2001.04.01 Revised Date : 2005.12.02 Page No. : 1/4 MICROELECTRONICS CORP. HBD437T COMPLEMENTARY SILICON POWER TRANSISTORS Description The HBD437T is silison epitaxial-base NPN power transistor in TO-126 plastic


    Original     		PDF HT200201 HBD437T HBD437T O-126 HBD438T. O-126 183oC 217oC 260oC h437b HBD438T

    lb 123t

    Abstract: HLB123T 123T LB123T
    Text: HI-SINCERITY Spec. No. : HT200402 Issued Date : 1993.05.15 Revised Date : 2006.02.20 Page No. : 1/4 MICROELECTRONICS CORP. HLB123T NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123T is designed for high voltage. High speed switching inductive circuits


    Original     		PDF HT200402 HLB123T HLB123T O-126 183oC 217oC 260oC 10sec lb 123t 123T LB123T

    H*772

    Abstract: HT772 transistor pnp 30V 2A 1W TRANSISTOR ht772
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HT200209 Issued Date : 1993.05.15 Revised Date : 2002.05.08 Page No. : 1/4 HT772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HT772 is designed for using in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver.


    Original     		PDF HT200209 HT772 HT772 O-126 H*772 transistor pnp 30V 2A 1W TRANSISTOR ht772

    HBD437T

    Abstract: HBD438T
    Text: HI-SINCERITY Spec. No. : HT200201 Issued Date : 2001.04.01 Revised Date : 2002.02.08 Page No. : 1/3 MICROELECTRONICS CORP. HBD437T COMPLEMENTARY SILICON POWER TRANSISTORS Description The HBD437T is silison epitaxial-base NPN power transistor in TO-126 plastic package, intented for use in medium power linear and switching


    Original     		PDF HT200201 HBD437T HBD437T O-126 HBD438T. t10ms) HBD438T

    IC350

    Abstract: 6718t
    Text: HI-SINCERITY Spec. No. : HT200701 Issued Date : 2007.08.01 Revised Date : 2007.08.09 Page No. : 1/5 MICROELECTRONICS CORP. H2N6718T NPN Epitaxial Planar Transistor Description TO-126 The H2N6718T is designed for general purpose medium power amplifier and switching.


    Original     		PDF HT200701 H2N6718T O-126 H2N6718T 183oC 217oC 240oC 260oC 10sec IC350 6718t

    transistor 7830

    Abstract: IC 7830 HMJE13003 tl 7400 IC 7430
    Text: HI-SINCERITY Spec. No. : HT200210 Issued Date : 2001.01.01 Revised Date : 2010.03.16 Page No. : 1/6 MICROELECTRONICS CORP. HMJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


    Original     		PDF HT200210 HMJE13003 O-126 Dis120 183oC 217oC 260oC 10sec transistor 7830 IC 7830 HMJE13003 tl 7400 IC 7430

    HT117

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HT200207 Issued Date : 2002.04.01 Revised Date : 2005.12.02 Page No. : 1/4 MICROELECTRONICS CORP. HT117 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-126 The HT117 is designed for use in general purpose amplifier and low-speed switching applications.


    Original     		PDF HT200207 HT117 O-126 HT117 183oC 217oC 260oC

    ht2000

    Abstract: HTMOS HT2160 HT-2000 HT2007
    Text: HTMOSTM High Temperature Products Preliminary HIGH TEMPERATURE GATE ARRAYS HT2000 FAMILY FEATURES APPLICATIONS • Specified -55 to +225°C, Operation to +300°C • Down-Hole Oil Well • Fabricated with HTMOS 0.65 µm Process • Avionics • 7K or 160K Available Gates Raw


    Original     		PDF HT2000 HT2000 208-pin HTMOS HT2160 HT-2000 HT2007

    649T

    Abstract: transistor sb 772 sb 649t HSB649T part mark sb 386 amplifier
    Text: HI-SINCERITY Spec. No. : HT200103 Issued Date : 2001.12.01 Revised Date : 2004.10.01 Page No. : 1/4 MICROELECTRONICS CORP. HSB649T SILICON PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-126 Absolute Maximum Ratings TA=25°C


    Original     		PDF HT200103 HSB649T O-126 183oC 217oC 260oC 649T transistor sb 772 sb 649t HSB649T part mark sb 386 amplifier

    HMJE13003

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HT200210 Issued Date : 2001.01.01 Revised Date : 2009.04.17 Page No. : 1/5 MICROELECTRONICS CORP. HMJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


    Original     		PDF HT200210 HMJE13003 O-126 Dis120 183oC 217oC 260oC 10sec HMJE13003

    HT112

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HT200101 Issued Date : 2000.05.01 Revised Date : 2005.12.02 Page No. : 1/5 MICROELECTRONICS CORP. HT112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HT112 is designed for use in general purpose amplifier and low-speed switching applications.


    Original     		PDF HT200101 HT112 HT112 O-126 183oC 217oC 260oC

    E13003

    Abstract: HMJE13003 MJE130
    Text: HI-SINCERITY Spec. No. : HT200210 Issued Date : 2001.01.01 Revised Date : 2006.10.26 Page No. : 1/5 MICROELECTRONICS CORP. HMJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


    Original     		PDF HT200210 HMJE13003 O-126 Dis120 183oC 217oC 260oC 10sec E13003 HMJE13003 MJE130

    HT112

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HT200101 Issued Date : 2000.05.01 Revised Date : 2002.03.28 Page No. : 1/4 MICROELECTRONICS CORP. HT112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HT112 is designed for use in general purpose amplifier and lowspeed switching applications.


    Original     		PDF HT200101 HT112 HT112 O-126

    Untitled

    Abstract: No abstract text available
    Text: Honeywell HTM O S High Temperature Products Advance Information HTMOS™ GATE ARRAYS HT2000 FAMILY FEATURES APPLICATIONS • Specified -55 to +225°C, Operation to +300°C • Down-Hole Oil Well • Fabricated with HTMOS™ 0.65 j.m Process • Avionics


    OCR Scan     		PDF HT2000 HT2000