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    HSG1002 Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    HSG1002 Renesas Electronics Corporation Small Signal Bip-TRSs for High Frequency Amplifier, , / Visit Renesas Electronics Corporation
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    HSG1002 Price and Stock

    Rochester Electronics LLC HSG1002VE-TL-E

    RF 0.035A C BAND GERMANIUM NPN
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    DigiKey HSG1002VE-TL-E Bulk 706
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    Renesas Electronics Corporation HSG1002VE-TL-E

    SIGEHBT HIGH FREQUENCY LOW NOISE AMPLIFIER
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    Verical HSG1002VE-TL-E 519,687 816
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    Rochester Electronics HSG1002VE-TL-E 519,687 1
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    HSG1002 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HSG1002 Renesas Technology SiGeHBT High Frequency Low Noise Amplifier Original PDF
    HSG1002-E Renesas Technology TRANS GP BJT NPN 35V 0.035A 4MFPAK Original PDF
    HSG1002VE Renesas Technology SiGeHBT High Frequency Low Noise Amplifier Original PDF
    HSG1002VE-E Renesas Technology TRANS GP BJT NPN 35V 0.035A 4MFPAK T/R Original PDF

    HSG1002 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: HSG1002 SiGeHBT High Frequency Low Noise Amplifier REJ03G0196-0100Z Rev.1.00 Apr.12.2004 Features • High power gain and low noise figure ; • MSG = 21 dB typ. , NF = 0.7 dB typ. at VCE = 2 V,IC = 5 mA, f = 1.8 GHz MSG = 20 dB typ. , NF = 0.8 dB typ. at VCE = 2 V,IC = 5 mA, f = 2.4 GHz


    Original     		PDF HSG1002 REJ03G0196-0100Z

    0603-34

    Abstract: 0709 817 B data sheet HSG1002 617 db 1655 MFPAK-4
    Text: HSG1002 SiGeHBT High Frequency Low Noise Amplifier REJ03G0196-0100Z Rev.1.00 Apr.12.2004 Features • High power gain and low noise figure ; • MSG = 21 dB typ. , NF = 0.7 dB typ. at VCE = 2 V,IC = 5 mA, f = 1.8 GHz MSG = 20 dB typ. , NF = 0.8 dB typ. at VCE = 2 V,IC = 5 mA, f = 2.4 GHz


    Original     		PDF HSG1002 REJ03G0196-0100Z 0603-34 0709 817 B data sheet HSG1002 617 db 1655 MFPAK-4

    IC 751 1124

    Abstract: str 1195 HSG1002 HSG1003 str 1229 FR 2407 IC str 1229 HSG1003VE
    Text: HSG1003 SiGeHBT High Frequency Low Noise Amplifier REJ03G0197-0100Z Rev.1.00 Apr.08.2004 Features • High power gain and low noise figure ; • MSG = 21 dB typ. , NF = 0.65 dB typ. at VCE = 2 V,IC = 5 mA, f = 1.8 GHz MSG = 19 dB typ. , NF = 0.75 dB typ. at VCE = 2 V,IC = 5 mA, f = 2.4 GHz


    Original     		PDF HSG1003 REJ03G0197-0100Z IC 751 1124 str 1195 HSG1002 HSG1003 str 1229 FR 2407 IC str 1229 HSG1003VE

    0709 817 B data sheet

    Abstract: HSG1002 nec 0882 k 1318
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    1002ds

    Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
    Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5


    Original     		PDF 24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as