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    United Chemi-Con Inc EMHS350GRA681MKE0S

    CAP ALUM 680UF 20% 35V SMD
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    DigiKey EMHS350GRA681MKE0S Cut Tape 1,190 1
    • 1 $1.93
    • 10 $1.235
    • 100 $0.866
    • 1000 $0.866
    • 10000 $0.866
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    EMHS350GRA681MKE0S Digi-Reel 1,190 1
    • 1 $1.93
    • 10 $1.235
    • 100 $0.866
    • 1000 $0.866
    • 10000 $0.866
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    EMHS350GRA681MKE0S Reel 1,000 250
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    • 1000 $0.77276
    • 10000 $0.58082
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    Mouser Electronics EMHS350GRA681MKE0S 1,482
    • 1 $1.36
    • 10 $0.911
    • 100 $0.695
    • 1000 $0.552
    • 10000 $0.53
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    Master Electronics EMHS350GRA681MKE0S 750
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    • 100 $1.0077
    • 1000 $0.7821
    • 10000 $0.4825
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    United Chemi-Con Inc EMHS350ARA271MHA0G

    CAP ALUM 35V POLAR
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    DigiKey EMHS350ARA271MHA0G Digi-Reel 949 1
    • 1 $0.63
    • 10 $0.421
    • 100 $0.2768
    • 1000 $0.2768
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    EMHS350ARA271MHA0G Cut Tape 949 1
    • 1 $0.63
    • 10 $0.421
    • 100 $0.2768
    • 1000 $0.2768
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    EMHS350ARA271MHA0G Reel 500 500
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    • 1000 $0.19442
    • 10000 $0.16426
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    United Chemi-Con Inc EMHS350ARA122MLH0S

    CAP ALUM 1.2MF 20% 35V SMD
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    DigiKey EMHS350ARA122MLH0S Cut Tape 226 1
    • 1 $1.83
    • 10 $1.165
    • 100 $1.83
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    Master Electronics EMHS350ARA122MLH0S
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    • 1000 $1.217
    • 10000 $0.671
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    United Chemi-Con Inc EMHS350GRA821MKG5S

    CAP ALUM 820UF 20% 35V SMD
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    DigiKey EMHS350GRA821MKG5S Cut Tape 200 1
    • 1 $1.79
    • 10 $1.139
    • 100 $0.7944
    • 1000 $0.7944
    • 10000 $0.7944
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    EMHS350GRA821MKG5S Reel 200 200
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    • 1000 $0.61091
    • 10000 $0.51286
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    EMHS350GRA821MKG5S Digi-Reel 200 1
    • 1 $1.79
    • 10 $1.139
    • 100 $0.7944
    • 1000 $0.7944
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    Mouser Electronics EMHS350GRA821MKG5S 1,200
    • 1 $1.48
    • 10 $1.11
    • 100 $0.834
    • 1000 $0.666
    • 10000 $0.528
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    Master Electronics EMHS350GRA821MKG5S 1,200
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    • 100 $1.079
    • 1000 $0.837
    • 10000 $0.516
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    United Chemi-Con Inc EMHS350ARA242MMN0S

    CAP ALUM 2.4MF 20% 35V SMD
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    DigiKey EMHS350ARA242MMN0S Digi-Reel 190 1
    • 1 $2.61
    • 10 $1.694
    • 100 $2.61
    • 1000 $2.61
    • 10000 $2.61
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    EMHS350ARA242MMN0S Cut Tape 190 1
    • 1 $2.61
    • 10 $1.694
    • 100 $2.61
    • 1000 $2.61
    • 10000 $2.61
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    EMHS350ARA242MMN0S Reel 100 1
    • 1 $2.61
    • 10 $1.694
    • 100 $1.2098
    • 1000 $0.9519
    • 10000 $0.84689
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    Mouser Electronics EMHS350ARA242MMN0S 100
    • 1 $2.2
    • 10 $1.7
    • 100 $1.29
    • 1000 $0.907
    • 10000 $0.843
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    Master Electronics EMHS350ARA242MMN0S
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    • 1000 $1.823
    • 10000 $1.02
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    HS350 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HS350W Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF

    HS350 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8240T6N SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The μPC8240T6N is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics, so this IC can improve the


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    PC8240T6N PC8240T6N PDF

    Untitled

    Abstract: No abstract text available
    Text: PreliminaryData Sheet PD5754T7A R09DS0012EJ0100 Rev.1.00 Dec 22, 2010 SiGe/CMOS Integrated Circuit 4 x 2 IF Switch Matrix with Gain and Tone/Voltage Controller FEATURES • 4 independent IF channels, integral switching to channel input to either channel output


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    PD5754T7A R09DS0012EJ0100 PD5739T7A 28-pin 28-pnesas PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    NE5500234

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2159T6R L, S-BAND SPDT SWITCH DESCRIPTION The μPG2159T6R is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band applications. This device can operate 2 control switching by control voltage 1.8 to 3.3 V. This device can operate frequency from


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    PG2159T6R PG2159T6R PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET GaAs INTEGRATED CIRCUITS µPG2106TB,µPG2110TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier which were developed for mobile phone and another L-band application. These devices can operate with 3.0 V TYP., having the high gain and low distortion.


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    PG2106TB, PG2110TB PG2106TB PG2110TB PG2106TB PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    HS350

    Abstract: No abstract text available
    Text: GaAs INTEGRATED CIRCUIT µPG2151T5K L, S-BAND SPDT SWITCH DESCRIPTION The µPG2151T5K is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from


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    PG2151T5K PG2151T5K 30anty HS350 PDF

    HS350

    Abstract: PG2155TB UPG2155TB UPG2155TB-A
    Text: GaAs INTEGRATED CIRCUIT UPG2155TB NEC’s L-BAND 4 W HIGH POWER SPDT SWITCH DESCRIPTION The µPG2155TB is an L-band SPDT GaAs FET switch developed for digital cellular or cordless telephone applications. The device can operate from 500 MHz to 2.5 GHz, with low insertion loss and high linearity.


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    UPG2155TB PG2155TB HS350 UPG2155TB UPG2155TB-A PDF

    c3220

    Abstract: UPC3220GR-E1-A IR260 617DB-1010 UPC3220GR NOTE U-134
    Text: DATA SHEET NEC's LOW DISTORTION DOWN-CONVERTER IC UPC3220GR FOR DIGITAL CATV FEATURES DESCRIPTION • LOW DISTORTION: IIP3 = +1.0 dBm TYP. • WIDE AGC DYNAMIC RANGE: GCRtotal = 45.5 dB TYP. NEC's UPC3220GR is a silicon monolithic IC designed for use as IF down-converter for digital CATV.


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    UPC3220GR UPC3220GR 16-pin c3220 UPC3220GR-E1-A IR260 617DB-1010 NOTE U-134 PDF

    20-PIN

    Abstract: HS350 PG2181T5R
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2181T5R HIGH POWER DP4T SWITCH FOR WiMAX DESCRIPTION The μPG2181T5R is a GaAs MMIC high power DP4T switch which was developed for WiMAX. This device can operatefrom 2.3 to 3.8 GHz, with low insertion loss and high isolation.


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    PG2181T5R PG2181T5R 20-pin HS350 PDF

    Untitled

    Abstract: No abstract text available
    Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC8230TU SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The PC8230TU is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics, so this IC can improve the


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    PC8230TU PC8230TU HS350 WS260 IR260 PU10612EJ01V0DS PDF

    PG2010TB

    Abstract: pg2010 F MARKING 6PIN
    Text: GaAs INTEGRATED CIRCUIT PG2010TB L-BAND SPDT SWITCH DESCRIPTION The PG2010TB is GaAs MMIC for L-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.


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    PG2010TB PG2010TB PG10317EJ02V0DS pg2010 F MARKING 6PIN PDF

    PC3225

    Abstract: transistor marking 6U ghz PC2710TB C3J marking max3139 PC2708TB PC2709TB marking c1d PC3223TB marking c3j
    Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3236TK 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3236TK is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.


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    PC3236TK PC3236TK HS350 WS260 IR260 PU10734EJ01V0DS PC3225 transistor marking 6U ghz PC2710TB C3J marking max3139 PC2708TB PC2709TB marking c1d PC3223TB marking c3j PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet PG2411T6R R09DS0020EJ0100 Rev.1.00 Apr 25, 2011 GaAs Integrated Circuit SPDT Switch for 1 GHz to 8 GHz DESCRIPTION The μPG2411T6R is a GaAs MMIC SPDT Single Pole Double Throw switch which was designed for 1 GHz to 8 GHz applications, including dual-band wireless LAN.


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    PG2411T6R PG2411T6R R09DS0020EJ0100 PDF

    DFT301-801

    Abstract: DFT301 GRM40CH102J50PT GRM39CH100D50PT GRM39CH080D50PT PC8128TB GRM39CH050C50PT
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8179TK 3 V SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The PC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 


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    PC8179TK PC8179TK PC8179TB HS350 WS260 IR260 PU10059EJ02V0DS DFT301-801 DFT301 GRM40CH102J50PT GRM39CH100D50PT GRM39CH080D50PT PC8128TB GRM39CH050C50PT PDF

    NE552R479A

    Abstract: mch215f104z 0X00 GSM1900 MCH185A101JK NE552R479A-T1A-A 433 mhz rf power amplifier module efficiency
    Text: NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET OUTLINE DIMENSIONS Units in mm FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V (Bottom View) A Gate 1.2 MAX.


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    NE552R479A NE552R479A mch215f104z 0X00 GSM1900 MCH185A101JK NE552R479A-T1A-A 433 mhz rf power amplifier module efficiency PDF

    GRM1552C1H

    Abstract: GRM155B11H102KA01B RO4003 GRM155B11 GRM155B11H grm1552c 12-PIN UPG2035T5F UPG2035T5F-E2-A 142-0721
    Text: DATA SHEET NEC's BROADBAND GaAs MMIC DPDT SWITCH UPG2035T5F FOR 2.4 GHz AND 5 GHz WLAN FEATURES • DESCRIPTION NEC's UPG2035T5F is a GaAs MMIC DPDT switch for 2.4 GHz and 5 GHz dualband Wireless LAN. OPERATING FREQUENCY: 2.4 to 2.5 GHz and 4.9 to 6.0 GHz specified


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    UPG2035T5F UPG2035T5F GRM1552C1H GRM155B11H102KA01B RO4003 GRM155B11 GRM155B11H grm1552c 12-PIN UPG2035T5F-E2-A 142-0721 PDF

    HS350

    Abstract: uPG2158T5K uPG2158T5K-E2-A VP215
    Text: PRELIMINARY PRODUCT INFORMATION GaAs INTEGRATED CIRCUIT uPG2158T5K L,S-BAND SPDT SWITCH DESCRIPTION The uPG2158T5K is a GaAs MMIC for L,S-band SPDT Single Pole Double Throw which were designed for mobile phone and the another L,S-band applications. This device can operate frequency from 0.05GHz to 3.0GHz, having the low insertion loss and high isolation.


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    uPG2158T5K 05GHz HS350 uPG2158T5K-E2-A VP215 PDF

    NEM090603M-28

    Abstract: T-91M
    Text: PRELIMINARY DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NEM090603M-28 N-CHANNEL SILICON POWER LDMOS FET FOR 75 W UHF-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NEM090603M-28 is an N-channel enhancement-mode lateral diffused MOS FET designed for driver or final


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    NEM090603M-28 NEM090603M-28 T-91M PDF

    uPG2214TK

    Abstract: HS350 PG2214TK VP215 UPG2214TK-E2
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2214TK L, S-BAND SPDT SWITCH DESCRIPTION The µPG2214TK is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from


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    PG2214TK PG2214TK uPG2214TK HS350 VP215 UPG2214TK-E2 PDF