32 PIN
Abstract: No abstract text available
Text: HN58V1001 Series Ordering Information Type No. Access time Package HN58V1001P-25 250 ns 600 mil 32-pin plastic DIP DP-32 HN58V1001FP-25 250 ns 525 mil 32-pin plastic SOP (FP-32D) HN58V1001T-25 250 ns 8 x 14 mm 32-pin plastic TSOP (TFP-32DA) Pin Arrangement
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HN58V1001
HN58V1001P-25
HN58V1001FP-25
HN58V1001T-25
32-pin
DP-32)
FP-32D)
TFP-32DA)
32 PIN
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SOP 8 200MIL
Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Text: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with
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D-85622
REJ01C0001-0100Z
SOP 8 200MIL
serial flash 256Mb fast erase spi
TM 1628 IC SOP
Micron 512MB NOR FLASH
HN29V1G91T-30
HN58C1001FPI-15
M5M51008DFP-70HI
256mb EEPROM Memory
CSP-48
TSOP 28 SPI memory Package flash
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Hitachi DSA002750
Abstract: No abstract text available
Text: HN58V1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function ADE-203-314G (Z) Rev. 7.0 Oct. 31, 1997 Description The Hitachi HN58V1001 is a electrically erasable and programmable ROM organized as 131072-word × 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS
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HN58V1001
128-kword
ADE-203-314G
131072-word
128-byte
HN58V1001R
TFP-32DAR)
FP-32D,
TFP-32DA
Hitachi DSA002750
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MO-142BA
Abstract: dl 750 Hitachi DSA00171
Text: HN58V1001 Series 131072-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-314F Z Rev. 6.0 Apr. 30, 1997 Description The Hitachi HN58V1001 is a electrically erasable and programmable ROM organized as 131072-word × 8-bit. It has realized high speed, low power consumption and high
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HN58V1001
131072-word
ADE-203-314F
128-byte
HN58V1001R
TFP-32DAR)
FP-32D,
MO-142BA
dl 750
Hitachi DSA00171
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HN58V1001
Abstract: HN58V1001FP-25 HN58V1001P-25 HN58V1001T HN58V1001T-25 DP-32 Hitachi DSA00358
Text: HN58V1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function ADE-203-314G (Z) Rev. 7.0 Oct. 31, 1997 Description The Hitachi HN58V1001 is a electrically erasable and programmable ROM organized as 131072-word × 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS
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HN58V1001
128-kword
ADE-203-314G
131072-word
128-byte
D-85622
HN58V1001FP-25
HN58V1001P-25
HN58V1001T
HN58V1001T-25
DP-32
Hitachi DSA00358
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Untitled
Abstract: No abstract text available
Text: HN58V1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function REJ03C0146-0800Z (Previous ADE-203-314G (Z) Rev. 7.0) Rev. 8.00 Nov. 28. 2003 Description Renesas Technology's HN58V1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced
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HN58V1001
128-kword
REJ03C0146-0800Z
ADE-203-314G
131072word
128-byte
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HN58V1001
Abstract: DP-32 HN58V1001FP-25 HN58V1001P-25 HN58V1001T HN58V1001T-25 Hitachi DSA00777
Text: ADE-203-314E Z HN58V1001 Series 131072-word x 8-bit Electrically Erasable and Programmable CMOS ROM Rev. 5.0 May. 23, 1995 The Hitachi HN58V1001 is a electrically erasable and programmable EEPROM organized as 131072-word × 8-bit. It realizes high speed, low
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ADE-203-314E
HN58V1001
131072-word
128-byte
HN58V1001P-25
32-pin
DP-32)
HN58V1001FP
DP-32
HN58V1001FP-25
HN58V1001P-25
HN58V1001T
HN58V1001T-25
Hitachi DSA00777
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Renesas mnos
Abstract: No abstract text available
Text: HN58V1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function REJ03C0146-0800Z (Previous ADE-203-314G (Z) Rev. 7.0) Rev. 8.00 Nov. 28. 2003 Description Renesas Technology's HN58V1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced
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HN58V1001
128-kword
REJ03C0146-0800Z
ADE-203-314G
131072word
128-byte
Renesas mnos
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HN58V1001T-25E
Abstract: HN58V1001 HN58V1001FP-25 HN58V1001FP-25E HN58V1001T-25 REJ03C0146-0800Z Renesas mnos
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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DP-32
Abstract: HN58V1001 HN58V1001FP-25 HN58V1001P-25 HN58V1001T HN58V1001T-25 Hitachi DSA0047
Text: HN58V1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function ADE-203-314G (Z) Rev. 7.0 Oct. 31, 1997 Description The Hitachi HN58V1001 is a electrically erasable and programmable ROM organized as 131072-word × 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS
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HN58V1001
128-kword
ADE-203-314G
131072-word
128-byte
HN58V1001R
TFP-32DAR)
FP-32D,
TFP-32DA
DP-32
HN58V1001FP-25
HN58V1001P-25
HN58V1001T
HN58V1001T-25
Hitachi DSA0047
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Hitachi DSAUTAZ005
Abstract: TFP-32DA
Text: HN58V1001 Series Package Dimensions HN58V1001P Series DP-32 Unit: mm 41.90 42.50 Max 17 13.4 13.7 Max 32 16 5.08 Max 1.20 2.30 Max 2.54 ± 0.25 0.48 ± 0.10 0.51 Min 2.54 Min 1 15.24 + 0.11 0.25 – 0.05 0° – 15° Hitachi Code JEDEC EIAJ Weight (reference value)
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HN58V1001
HN58V1001P
DP-32)
DP-32
HN58V1001FP
FP-32D)
FP-32Dax
FP-32D
Hitachi DSAUTAZ005
TFP-32DA
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DP-32
Abstract: HN58V1001 HN58V1001FP-25 HN58V1001T HN58V1001T-25 HN58V1001P-25
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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D-85622
DP-32
HN58V1001
HN58V1001FP-25
HN58V1001T
HN58V1001T-25
HN58V1001P-25
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Untitled
Abstract: No abstract text available
Text: HN58V1001 Series Preliminary 1M 128Kx 8-bit EEPROM • DESCRIPTION The Hitachi HN58V1001 is a 1-Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131,072 x 8-bits. The HN58V1001 is capable of in-system electrical Byte and Page reprogrammability. For applications where
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HN58V1001
128Kx
128-Byte
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Untitled
Abstract: No abstract text available
Text: HN58V1001 Series Preliminary 131,072-word x 8-bit Electrically Erasable and Programmable CMOS ROM The Hitachi HN58V1001 is a electically erasable and p rogram m able EEPROM organized as 131072-word x 8-bit. It realizes high speed, low power consumption, and a high level of reliability,
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HN58V1001
072-word
131072-word
128-byte
HN58V1001P-25
32-pin
DP-32)
HN58V1001FP-25
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Untitled
Abstract: No abstract text available
Text: HN58V1001 Series Preliminary 1M 128K x 8-bit EEPROM • DESCRIPTION The Hitachi HN58V1001 is a 1-Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131,072 x 8-bits. The HN58V1001 is capable of in-system electrical Byte and Page reprogrammability.
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HN58V1001
128-Byte
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hn58v1001
Abstract: TFP-32DAR
Text: HN58V1001 Series Preliminary 1 M 1 2 8 K x 8 - b it E E P R O M • DESCRIPTION The Hitachi HN58V1001 is a 1-Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131,072 x 8-bits. The HN58V1001 is capable of in-system
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HN58V1001
128-Byte
TFP-32DAR
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ZXXXM
Abstract: HNS8V1001
Text: HIN58V1001 Series Prelim inary 1M 128K x 8-bit EEPROM • DESCRIPTION The Hitachi HN58V1001 is a 1-Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131,072 x 8-bits. The HN58V1001 is capable of in-system electrical Byte and Page reprogrammability. For applications where
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HIN58V1001
HN58V1001
128-Byte
ZXXXM
HNS8V1001
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hn58v1001
Abstract: No abstract text available
Text: HN58V1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function HITACHI ADE-203-314G (Z) Rev. 7.0 Oct. 31, 1997 Description The Hitachi HN58V1001 is a electrically erasable and programmable ROM organized as 131072-word X 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS
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HN58V1001
128-kword
ADE-203-314G
131072-word
128-byte
HN58V1001R
TFP-32DAR)
FP-32D,
TFP-32DA
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Untitled
Abstract: No abstract text available
Text: HN58V1001 Series 131072-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-314E Z Rev. 5.0 May 23, 1995 Description The Hitachi HN58V1001 is a electrically erasable and programmable EEPROM organized as 131072-word x 8-bit. It realizes high speed, low power consumption, and a high level of reliability, employing advanced
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HN58V1001
131072-word
ADE-203-314E
128-byte
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Untitled
Abstract: No abstract text available
Text: HN58V1001 Series 131072-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-314F Z Rev. 6.0 Apr. 30, 1997 Description The Hitachi HN58V1001 is a electrically erasable and programmable ROM organized as 131072-word x 8-bit. It has realized high speed, low power consumption and high
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HN58V1001
131072-word
ADE-203-314F
128-byte
HN58V1001R
TFP-32DAR)
FP-32D,
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HN58C1001
Abstract: DP-32 HN58V1001 HN58V1001FP-25 HN58V1001P-25 HN58V1001R-25 HN58V1001T-25 Hitachi Scans-001
Text: HN58V1001 Series Prelim inary 1M 128Kx 8-bit EEPROM • DESCRIPTION The Hitachi HN58V1001 is a 1-Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131,072 x 8-bits. The HN58V1001 is capable of in-system electrical Byte and Page reprogrammability.
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HN58V1001
128Kx
128-Byte
HN58C1001
DP-32
HN58V1001FP-25
HN58V1001P-25
HN58V1001R-25
HN58V1001T-25
Hitachi Scans-001
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Untitled
Abstract: No abstract text available
Text: ADE-203-314E Z HN58V1001 Series 131,072-word x 8-bit Electrically Erasable and Programmable CMOS ROM U II TI M A PO Mm I n The Hitachi HN58V1001 is an electrically erasable and program m able EEPROM organized as 131,072-word x 8-bit. It realizes high speed, low
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ADE-203-314E
HN58V1001
072-word
128-byte
Rev50
HN58V1001P-25
HN58V1001FP-25
HN58V1001T-25
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hn58v1001
Abstract: 58V1001FP
Text: HN58V1001 Series 131072-word X 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-314E Z Rev. 5.0 May 23, 1995 Description The Hitachi HN58V1001 is a electrically erasable and programmable EEPROM organized as 131072-word X 8-bit. It realizes high speed, low pow er consumption, and a high level of reliability, employing advanced
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HN58V1001
131072-word
ADE-203-314E
131072-word
128-byte
100IP
DP-32)
58V1001FP
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Untitled
Abstract: No abstract text available
Text: HN58V1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function HITACHI ADE-203-314G (Z) Rev. 7.0 Oct. 31, 1997 Description The Hitachi HN58V1001 is a electrically erasable and programmable ROM organized as 131072-word x 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS
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HN58V1001
128-kword
ADE-203-314G
131072-word
128-byte
HN58V1001R
TFP-32DAR)
FP-32D,
TFP-32DA
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