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    HN3C18FU Search Results

    HN3C18FU Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HN3C18FU Toshiba Silicon NPN epitaxial planar type transistor for VHF-UHF band low noise amplifier applications Scan PDF
    HN3C18FU Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA HN3C18FU TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C18FU V H F -U H F LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : N F = 1.4dB (f=2G H z) • High Gain : |S2 i el2 = 10dB (f=2G H z)


    OCR Scan     		PDF HN3C18FU 16GHz

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA HN3C18FU TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C18FU V H F -U H F LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : N F = 1.4dB (f=2G H z) • High Gain : |S2 i el2 = 10dB (f=2G H z)


    OCR Scan     		PDF HN3C18FU 16GHz

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN3C18FU TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C18FU V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS U nit in mm 2.1 ± 0.1 CHIP : fT = 16GHz series • Low Noise Figure : NF = 1.4dB (f=2G Hz) • High Gain : |S2 i e |2 = 10dB (f=2G Hz)


    OCR Scan     		PDF HN3C18FU 16GHz

    HN3C18FU

    Abstract: No abstract text available
    Text: TOSHIBA HN3C18FU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C18FU VHF-UHF LOW NOISE AMPLIFIER APPLICATIONS U nit in mm 2.1 ± 0.1 CHIP : fT = 16GHz series • Low Noise Figure : NF = 1.4dB (f=2G Hz) • High Gain : |S2 i e |2 = 10dB (f=2G Hz)


    OCR Scan     		PDF HN3C18FU 16GHz HN3C18FU

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE HN3C18FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C18FU VHF-UHF LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : NF = 1.4dB (f=2GHz) • High Gain : |S2 l e|2= 10dB (f=2GHz)


    OCR Scan     		PDF HN3C18FU 16GHz

    HN3C18FU

    Abstract: No abstract text available
    Text: TO SH IBA HN3C18FU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C18FU Unit in mm VH F-U HF LOW NOISE AMPLIFIER APPLICATIONS 2.1 CHIP : fT = 16GHz series • Low Noise Figure : NF = 1.4dB (f=2GHz) • High Gain : |S2i e|2= 10dB (f=2GHz)


    OCR Scan     		PDF HN3C18FU 16GHz HN3C18FU