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    HN29V51211T Search Results

    HN29V51211T Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HN29V51211T-50 Hitachi Semiconductor 512M AND type Flash Memory More than 32,113-sector (542,581,248-bit) Original PDF
    HN29V51211T-50 Hitachi Semiconductor Flash Memory, 512Mbit, Sectored, 3.3V Supply, TSOP, 48-Pin Original PDF
    HN29V51211T-50 Renesas Technology 512M AND Type Flash Memory More Than 32,113-Sector (542,581,248 Bit) Original PDF
    HN29V51211T-50H Hitachi Semiconductor Flash, 512M AND type Flash Memory More than 32, 113-sector (542, 581, 248-Bit) Original PDF
    HN29V51211T-50H Renesas Technology 512M AND Type Flash Memory More Than 32,113-Sector (542,581,248 Bit) Original PDF

    HN29V51211T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Hitachi DSAUTAZ006

    Abstract: No abstract text available
    Text: HN29V51211 Series Package Dimensions HN29V51211T Series TFP-48DA 12.00 12.40 Max 25 18.40 48 Unit: mm 24 1.20 Max *0.22 ± 0.08 0.08 M 0.20 ± 0.06 0.45 Max 0.08 *Dimension including the plating thickness Base material dimension 44 0.80 20.00 ± 0.20 0° – 8°


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    PDF HN29V51211 HN29V51211T TFP-48DA) TFP-48DA Hitachi DSAUTAZ006

    Untitled

    Abstract: No abstract text available
    Text: HN29V51211T-50H Pin Arrangement 48-pin TSOP VCC NC*1 NC*1 NC*1 VSS RES RDY/Busy SC OE I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 CDE WE CE NC*1 VSS 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 1 2 3 4 5 6 7 8 9 10 11 12 13 14


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    PDF HN29V51211T-50H 48-pin

    Hitachi DSAUTAZ006

    Abstract: No abstract text available
    Text: HN29V51211 Series Package Dimensions HN29V51211T Series TFP-48DA 12.00 12.40 Max 25 18.40 48 Unit: mm 24 1.20 Max *0.22 ± 0.08 0.08 M 0.20 ± 0.06 0.45 Max 0.10 *Dimension including the plating thickness Base material dimension 0.80 20.00 ± 0.20 0° – 8°


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    PDF HN29V51211 HN29V51211T TFP-48DA) TFP-48DA Hitachi DSAUTAZ006

    800H

    Abstract: HN29V51211T-50H Hitachi DSA00480 D2048
    Text: HN29V51211T-50H 512M AND type Flash Memory More than 32,113-sector 542,581,248-bit ADE-203-1333A (Z) Rev. 1.0 Apr. 5, 2002 Description The Hitachi HN29V51211T-50H is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are


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    PDF HN29V51211T-50H 113-sector 248-bit) ADE-203-1333A HN29V51211T-50H 800H Hitachi DSA00480 D2048

    32768

    Abstract: if multiplexer MULTIPLEXER HN29V51211T-50H
    Text: HN29V51211T-50H Block Diagram Sector address buffer X-decoder 32768 x 2048 + 64 × 8 memory matrix Data register (2048 + 64) •• I/O0 to I/O7 • • Multiplexer 32113 - 32768 2048 + 64 • • Data input buffer • • Input data control • • Y-gating


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    PDF HN29V51211T-50H 32768 if multiplexer MULTIPLEXER HN29V51211T-50H

    Hitachi DSAUTAZ006

    Abstract: No abstract text available
    Text: HN29V51211T-50H Package Dimensions HN29V51211T-50H TFP-48DA 12.00 12.40 Max Unit: mm 25 18.40 48 As of January, 2002 24 1.20 Max *0.22 ± 0.08 0.08 M 0.20 ± 0.06 0.45 Max 0.10 *Dimension including the plating thickness Base material dimension 44 0.80 20.00 ± 0.20


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    PDF HN29V51211T-50H TFP-48DA) TFP-48DA Hitachi DSAUTAZ006

    Hitachi DSAUTAZ006

    Abstract: No abstract text available
    Text: HN29V51211T-50H 512M AND type Flash Memory More than 32,113-sector 542,581,248-bit ADE-203-1333A (Z) Rev. 1.0 Apr. 5, 2002 Description The Hitachi HN29V51211T-50H is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are


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    PDF HN29V51211T-50H 113-sector 248-bit) ADE-203-1333A HN29V51211T-50H 48-pin TFP-48DA) Hitachi DSAUTAZ006

    SOP 8 200MIL

    Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
    Text: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with


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    PDF D-85622 REJ01C0001-0100Z SOP 8 200MIL serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash

    800H

    Abstract: HN29V51211 HN29V51211T-50
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    PDF

    800H

    Abstract: HN29V51211T-50H
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original
    PDF

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: HN29V51211 Series 512M AND type Flash Memory More than 32,113-sector 542,581,248-bit ADE-203-1221A (Z) Preliminary Rev. 0.1 May. 10, 2001 Description The Hitachi HN29V51211 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are


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    PDF HN29V51211 113-sector 248-bit) ADE-203-1221A D-85622 Hitachi DSA00276

    O2-A2

    Abstract: 800H HN29V51211 HN29V51211T-50
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    PDF

    Hitachi 1024k*8 SRAM

    Abstract: HB28B128C8C HB28B512C8C CSP72 NVM1GBYTE CSP-72 512kx8 sram dip HN58X2402SI HN58X2404SI HN58X2408I
    Text: Family Group TotalSize Organisation SupplyVoltage HN58X2464I EEPROM NVM 64kbit 8kx8 1.80 - 5.50 - SOP-8 2-wire serial interface, 400kHz HN58X2432I EEPROM NVM 32kbit 4kx8 1.80 - 5.50 - SOP-8 2-wire serial interface, 400kHz HN58X2416I EEPROM NVM 16kbit 2kx8


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    PDF HN58X2464I 64kbit 400kHz HN58X2432I 32kbit HN58X2416I 16kbit HN58X2408I Hitachi 1024k*8 SRAM HB28B128C8C HB28B512C8C CSP72 NVM1GBYTE CSP-72 512kx8 sram dip HN58X2402SI HN58X2404SI HN58X2408I

    lvc16244

    Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
    Text: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List


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    PDF HD49323A HA12134A HA12141N HA12155N HA12163 HA12167F HA12173 HA12179F HA12181F HA12187F lvc16244 BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP

    800H

    Abstract: HN29V51211 HN29V51211T-50 Hitachi DSA0047
    Text: HN29V51211 Series 512M AND type Flash Memory More than 32,113-sector 542,581,248-bit ADE-203-1221B (Z) Preliminary Rev. 0.2 Jul. 25, 2001 Description The Hitachi HN29V51211 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are


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    PDF HN29V51211 113-sector 248-bit) ADE-203-1221B 800H HN29V51211T-50 Hitachi DSA0047

    TDB 1240

    Abstract: 800H HN29V51211 HN29V51211T-50 Hitachi DSA00189
    Text: HN29V51211 シリ−ズ 512M AND type Flash Memory More than 32,113-sector 542,581,248-bit ADJ-203-588 (Z) ’00. 9. 20 暫定仕様 Rev. 0.0 概要 HN 29 V5 12 11 シリ−ズは単一電源(3. 0 V)で自動書き込みおよび自動消去が可能な多値 AN D 型メモリセル


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    PDF HN29V51211 113-sector 248-bit) ADJ-203-588 HN29V51211 HN29V51211T-50 TDB 1240 800H HN29V51211T-50 Hitachi DSA00189

    Hitachi DSAUTAZ006

    Abstract: No abstract text available
    Text: HN29V51211 Series 512M AND type Flash Memory More than 32,113-sector 542,581,248-bit ADE-203-1221A (Z) Preliminary Rev. 0.1 May. 10, 2001 Description The Hitachi HN29V51211 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are


    Original
    PDF HN29V51211 113-sector 248-bit) ADE-203-1221A HN29V51211T-50 48-pin TFP-48DA) Hitachi DSAUTAZ006

    TFP-48DA

    Abstract: Hitachi DSAUTAZ006
    Text: HN29V51211 Series 512M AND type Flash Memory More than 32,113-sector 542,581,248-bit ADE-203-1221C (Z) Rev. 1.0 Jan. 25, 2002 Description The Hitachi HN29V51211 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are


    Original
    PDF HN29V51211 113-sector 248-bit) ADE-203-1221C HN29V51211T-50 48-pin TFP-48DA) TFP-48DA Hitachi DSAUTAZ006

    Hitachi DSA002734

    Abstract: 2112N
    Text: HN29V51211 Series 512M AND type Flash Memory More than 32,113-sector 542,581,248-bit ADE-203-1221C (Z) Rev. 1.0 Jan. 25, 2002 Description The Hitachi HN29V51211 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are


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    PDF HN29V51211 113-sector 248-bit) ADE-203-1221C Hitachi DSA002734 2112N