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    Samsung Semiconductor SPMWHHN29AQ5SGWMRM

    LED LM283N+ WARM WHT 2700K 1113
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    DigiKey SPMWHHN29AQ5SGWMRM Cut Tape 39,950 1
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    SPMWHHN29AQ5SGWMRM Reel 36,000 4,000
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    Samsung Semiconductor SPMWHHN29AQ5SGDMRM

    LED LM283N+ WARM WHT 2200K 1113
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    DigiKey SPMWHHN29AQ5SGDMRM Cut Tape 39,750 1
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    SPMWHHN29AQ5SGDMRM Digi-Reel 39,750 1
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    SPMWHHN29AQ5SGDMRM Reel 36,000 4,000
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    Samsung Semiconductor SPMWHHN29AQ5SKDMRM

    LED LM283N+ WARM WHT 2200K 1113
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    DigiKey SPMWHHN29AQ5SKDMRM Cut Tape 32,000 1
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    SPMWHHN29AQ5SKDMRM Digi-Reel 32,000 1
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    Samsung Semiconductor SPMWHHN29AQ5SKWMRM

    LED LM283N+ WARM WHT 2700K 1113
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    DigiKey SPMWHHN29AQ5SKWMRM Digi-Reel 19,975 1
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    SPMWHHN29AQ5SKWMRM Cut Tape 19,975 1
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    SPMWHHN29AQ5SKWMRM Reel 16,000 4,000
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    Samsung Semiconductor SPMWHHN29AQ5SKD0RM

    LED LM283N+ WARM WHT 2200K 1113
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    DigiKey SPMWHHN29AQ5SKD0RM Reel 40,000
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    HN29 Datasheets (113)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HN2-9-A+ Condor AC/DC POWER SUPPLY SNGL OUT 2V 9A Original PDF
    HN29A128A0A Renesas Technology 128M superAND Flash Memory (with internal sector management) Original PDF
    HN29A128A0ABP-8E Renesas Technology 128M SuperAND Flash Memory (with Internal Sector Management) Original PDF
    HN29A128A0ABP-8E Renesas Technology 128M superAND Flash Memory(with internal sector management) Original PDF
    HN29A128A1A Renesas Technology 128M superAND Flash Memory (with internal sector management) Original PDF
    HN29A128A1ABP-8E Renesas Technology 128M superAND Flash Memory(with internal sector management) Original PDF
    HN29A128A1ABP-8E Renesas Technology 128M SuperAND Flash Memory (with Internal Sector Management) Original PDF
    HN29C101P-12 Hitachi Semiconductor 128K x 8 CMOS EEPROM Memory Scan PDF
    HN29C101P-12 Hitachi Semiconductor 131072-word x 8-Bit CMOS Flash EEPROM Scan PDF
    HN29C101P-15 Hitachi Semiconductor 128K x 8 CMOS EEPROM Memory Scan PDF
    HN29C101P-15 Hitachi Semiconductor 131072-word x 8-Bit CMOS Flash EEPROM Scan PDF
    HN29C101P-20 Hitachi Semiconductor 128K x 8 CMOS EEPROM Memory Scan PDF
    HN29C101P-20 Hitachi Semiconductor 131072-word x 8-Bit CMOS Flash EEPROM Scan PDF
    HN29C101P/T/R-12 Hitachi Semiconductor 128K x 8 CMOS EEPROM Memory Scan PDF
    HN29C101P/T/R-15 Hitachi Semiconductor 128K x 8 CMOS EEPROM Memory Scan PDF
    HN29C101P/T/R-20 Hitachi Semiconductor 128K x 8 CMOS EEPROM Memory Scan PDF
    HN29C101R-12 Hitachi Semiconductor 128K x 8 CMOS EEPROM Memory Scan PDF
    HN29C101R-15 Hitachi Semiconductor 128K x 8 CMOS EEPROM Memory Scan PDF
    HN29C101R-20 Hitachi Semiconductor 128K x 8 CMOS EEPROM Memory Scan PDF
    HN29C101T-12 Hitachi Semiconductor 128K x 8 CMOS EEPROM Memory Scan PDF

    HN29 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    o2-a2

    Abstract: Hitachi DSA00196
    Text: HN29W8411 Series 84M AND type Flash Memory More than 21,074-sector 86,319,104-bit ADE-203-870A (Z) Preliminary Rev. 0.1 Mar. 31, 1998 Description The Hitachi HN29W8411 Series is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The functions are


    Original     		HN29W8411 074-sector 104-bit) ADE-203-870A 51vel o2-a2 Hitachi DSA00196 PDF

    AH10T

    Abstract: hn29w12811t-50 Hitachi DSA00170
    Text: HN29W12811 シリ−ズ 128M AND type Flash Memory More than 8,029-sector 135,657,984-bit ADJ-203-551A (Z) ’00. 9. 4 暫定仕様 Rev. 0.1 概要 HN29W12811 シリ−ズは単一電源(3.3V)で自動書き込みおよび自動消去が可能な多値 AND型メモリセル


    Original     		HN29W12811 029-sector 984-bit) ADJ-203-551A 50/80ns HN29W12811T-50 HN29W12811T-80 AH10T hn29w12811t-50 Hitachi DSA00170 PDF

    hn29w256ah

    Abstract: Hitachi DSA00276
    Text: HN29W256AH03TE-1 Controller for AND Flash Memory ADE-203-1147 Z Preliminary Rev. 0.0 Jan. 27, 2000 Description HN29W256AH03TE-1 is a controller IC for flash ATA card. This IC is manufactured using Hitachi 0.5 µm CMOS technology, and integrates control logic with SH1•CPU core. This IC is able to control maximum 32


    Original     		HN29W256AH03TE-1 ADE-203-1147 HN29W256AH03TE-1 HN29W25611, HN29W25611 hn29w256ah Hitachi DSA00276 PDF

    Hitachi Stacked package memory

    Abstract: HN29W16814 SA Series HITEC 527 PD513 Hitachi DSA00196
    Text: HN29W16814 Series 168M AND type Flash Memory More than 21,074-sector 86,319,104-bit x 2 ADE-203-943 (Z) Preliminary Rev. 0.0 Jul. 21, 1998 Description The Hitachi HN29W16814 Series is stacked 2 chips Hitachi 84-Mbit Flash memory (HN29W8411) that are CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase


    Original     		HN29W16814 074-sector 104-bit) ADE-203-943 84-Mbit HN29W8411) HN29W8411 Hitachi Stacked package memory SA Series HITEC 527 PD513 Hitachi DSA00196 PDF

    Untitled

    Abstract: No abstract text available
    Text: HN29V1G91T-30 128M x 8-bit AG-AND Flash Memory REJ03C0056-0300Z Rev. 3.00 Jun.03.2004 Description The HN29V1G91 series achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's previous multi level cell Flash memory, using 0.13µm process technology and AG-AND Assist GateAND type Flash memory cell using multi level cell technology provides both the most cost effective


    Original     		HN29V1G91T-30 REJ03C0056-0300Z HN29V1G91 PDF

    Hitachi DSA00281

    Abstract: No abstract text available
    Text: HN29W25611 Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-995C (Z) Rev. 2.0 May. 11, 2001 Description The Hitachi HN29W25611 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are


    Original     		HN29W25611 057-sector 072-bit) ADE-203-995C D-85622 Hitachi DSA00281 PDF

    HN29V25611A

    Abstract: if multiplexer
    Text: HN29V25611A Series Block Diagram Sector address buffer X-decoder 16384 x 2048 + 64 × 8 memory matrix Data register (2048 + 64) •• I/O0 to I/O7 • • Multiplexer 16057 - 16384 2048 + 64 • • Data input buffer • • Input data control • •


    Original     		HN29V25611A if multiplexer PDF

    HN29W6484ah03

    Abstract: HN29W6484AH03TE-1
    Text: HN29W6484AH03TE-1 Controller for AND Flash Memory ADE-203-988A Z Rev. 1.0 Apr. 16, 1999 Description HN29W6484AH03TE-1 is a controller IC for flash ATA card. This IC is manufactured based on Hitachi 0.5 µm CMOS technology, and integrates control logic with 8 bit micro processor. This IC is able to control


    Original     		HN29W6484AH03TE-1 ADE-203-988A HN29W6484AH03TE-1 HN29W6411A HN29W8411, HN29W8411 HN29W6484ah03 PDF

    Untitled

    Abstract: No abstract text available
    Text: HN29W6411A Series Block Diagram Sector address buffer X-decoder 16384 x 512 + 16 × 8 memory matrix Data register (512 + 16) •• I/O0 to I/O7 • • 16057 - 16384 512 + 16 • Multiplexer • Data input buffer • • Input data control • • Y-gating


    Original     		HN29W6411A PDF

    Hitachi DSAUTAZ006

    Abstract: No abstract text available
    Text: HN29W25611S Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1233B (Z) Rev. 2.0 Mar. 8, 2001 Description The Hitachi HN29W25611S Series is CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled


    Original     		HN29W25611S 057-sector 072-bit) ADE-203-1233B HN29W25611ST-80 48-pin TFP-48D) Hitachi DSAUTAZ006 PDF

    Hitachi DSAUTAZ006

    Abstract: No abstract text available
    Text: HN29V51211 Series Package Dimensions HN29V51211T Series TFP-48DA 12.00 12.40 Max 25 18.40 48 Unit: mm 24 1.20 Max *0.22 ± 0.08 0.08 M 0.20 ± 0.06 0.45 Max 0.08 *Dimension including the plating thickness Base material dimension 44 0.80 20.00 ± 0.20 0° – 8°


    Original     		HN29V51211 HN29V51211T TFP-48DA) TFP-48DA Hitachi DSAUTAZ006 PDF

    Untitled

    Abstract: No abstract text available
    Text: HN29V51211T-50H Pin Arrangement 48-pin TSOP VCC NC*1 NC*1 NC*1 VSS RES RDY/Busy SC OE I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 CDE WE CE NC*1 VSS 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 1 2 3 4 5 6 7 8 9 10 11 12 13 14


    Original     		HN29V51211T-50H 48-pin PDF

    TFP-48DA

    Abstract: Hitachi DSAUTAZ006
    Text: HN29V102414 Series Package Dimensions HN29V102414T Series TFP-48DA 12.00 12.40 Max 25 18.40 48 Unit: mm 24 1.20 Max *0.22 ± 0.08 0.08 M 0.20 ± 0.06 0.45 Max 0.10 *Dimension including the plating thickness Base material dimension 42 0.80 20.00 ± 0.20 0° – 8°


    Original     		HN29V102414 HN29V102414T TFP-48DA) TFP-48DA Hitachi DSAUTAZ006 PDF

    Hitachi DSAUTAZ006

    Abstract: No abstract text available
    Text: HN29V51211 Series Package Dimensions HN29V51211T Series TFP-48DA 12.00 12.40 Max 25 18.40 48 Unit: mm 24 1.20 Max *0.22 ± 0.08 0.08 M 0.20 ± 0.06 0.45 Max 0.10 *Dimension including the plating thickness Base material dimension 0.80 20.00 ± 0.20 0° – 8°


    Original     		HN29V51211 HN29V51211T TFP-48DA) TFP-48DA Hitachi DSAUTAZ006 PDF

    Hitachi DSAUTAZ006

    Abstract: No abstract text available
    Text: HN29V25611A Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1275B (Z) Rev. 1.0 Jan. 25, 2002 Description The Hitachi HN29V25611A Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are


    Original     		HN29V25611A 057-sector 072-bit) ADE-203-1275B HN29V25611AT-50 48-pin TFP-48DA) Hitachi DSAUTAZ006 PDF

    Untitled

    Abstract: No abstract text available
    Text: HN29V102414 Series Pin Arrangement 48-pin TSOP VCC*2 NC*1, 2 NC*1, 2 NC*1, 2 VSS*2 RES*2 RDY/Busy*2 SC*2 OE*2 I/O0*2 I/O1*2 I/O2*2 I/O3*2 VCC*2 VSS*2 I/O4*2 I/O5*2 I/O6*2 I/O7*2 CDE*2 WE*2 CE*2 NC*1, 2 VSS*2 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33


    Original     		HN29V102414 48-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: HN29V25611A Series Pin Arrangement 48-pin TSOP VCC NC*1 NC*1 NC*1 VSS RES RDY/Busy SC OE I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 CDE WE CE NC*1 VSS 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 1 2 3 4 5 6 7 8 9 10 11 12 13


    Original     		HN29V25611A 48-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: HN29W6411 Series More than 16,057 sectors 67,824,768 bits CMOS AND Flash Memory (Mostly Good Memory) HITACHI Preliminary Rev.0.7 March 28, 1996 Description The Hitachi HN29W6411 is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3V power supply. The functions are controlled by


    OCR Scan     		HN29W6411 PDF

    Untitled

    Abstract: No abstract text available
    Text: HN29W6411A Series 64M AND type Flash Memory More than 16,057-sector 67,824,768-bit HITACHI ADE-203-865C (Z) Rev. 1.0 Oct. 20, 1998 Description The Hitachi HN29W6411A Series is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The functions are


    OCR Scan     		HN29W6411A 057-sector 768-bit) ADE-203-865C b1/06: PDF

    Untitled

    Abstract: No abstract text available
    Text: HN29WT800/HN29WB800 Series 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-537 Z Preliminary - Rev. 0.0 J u n .14,1996 Description The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with DINOR (Divided bitlineNOR) type memory cells, thatrealize programming and erase


    OCR Scan     		HN29WT800/HN29WB800 1048576-word 524288-word 16-bit ADE-203-537 HN29WT800 HN29WB800 8-bit/512-kword PDF

    Untitled

    Abstract: No abstract text available
    Text: HN29VT800 Series, HN29VB800 Series 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-781A Z Rev. 1.0 Apr. 25, 1997 Description The Hitachi HN29VT800 Series, HN29VB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with DINOR (Divided bitline NOR) type memory cells, that realize programming and erase


    OCR Scan     		HN29VT800 HN29VB800 1048576-word 524288-word 16-bit ADE-203-781A 8-bit/512-kword PDF

    Untitled

    Abstract: No abstract text available
    Text: HN29W6411A Series 64M AND type Flash Memory More than 16,057-sector 67,824,768-bit HITACHI ADE-203-865D€ (Z) Rev. 21.0 FebQet. 20, 1999K Description The Hitachi HN29W6411A Series is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The functions are


    OCR Scan     		HN29W6411A 057-sector 768-bit) ADE-203-865D 1999K PDF

    MO-142DD

    Abstract: No abstract text available
    Text: HN29WT800 Series HN29WB800 Series 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-537A Z Rev. 1.0 May. 9, 1997 Description The Hitachi HN29WT800 Series, HN29WB800 Senes are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with DINOR (Divided bitline NOR) type memory cells, that realize programming and erase


    OCR Scan     		HN29WT800 HN29WB800 1048576-word 524288-word 16-bit ADE-203-537A 8-bit/512-kword MO-142DD PDF

    td 1410

    Abstract: HN28F101 HN28F101FP-12 HN28F101FP-15 HN28F101FP-20 HN28F101P-12 HN28F101P-15 HN28F101P-20 HN28F101-15
    Text: NEW PRODUCT HN28F101 Series Changed from HN29C101B 128K X 8-bit CMOS Flash Memory ^ H IT A C H I Preliminary Rev. 4.4 October 14,1991 The Hitachi HN28F101 is a 131,072 x 8-bit CMOS Flash Memory that is capable of in­ system electrical chip erasure and reprogramming.


    OCR Scan     		HN28F1 HN29C101B) HN28F101 HN28F101: 413-3SÂ MM4144 JXD93, 116MTI td 1410 HN28F101FP-12 HN28F101FP-15 HN28F101FP-20 HN28F101P-12 HN28F101P-15 HN28F101P-20 HN28F101-15 PDF