HN27V101AFP
Abstract: HN27V101AFP-25 HN27V101ATT HN27V101ATT-25
Text: HN27V101AFP/ATT Series 131072-word x 8-bit CMOS One Time Electrically Programmable ROM with Low VCC Description The HN27V101AFP/ATT series are 131072-word × 8-bit one time electrically programmable ROM. Initially, all bits of the HN27V101AFP/ATT series are in the "1" state (output high). Data is introduced by selectively
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HN27V101AFP/ATT
131072-word
32-pin
HN27V101ATT
HN27V101AFP
FP-32D)
HN27V101AFP-25
HN27V101ATT-25
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HN27V101AFP
Abstract: HN27V101AFP-25 HN27V101ATT HN27V101ATT-25 Hitachi DSA00515
Text: HN27V101AFP/ATT Series Preliminary 131072-word x 8-bit CMOS One Time Electrically Programmable ROM with Low VCC The HN27V101AFP/ATT series are 131072-word × 8-bit one time electrically programmable ROM. Initially, all bits of the HN27V101AFP/ATT series
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HN27V101AFP/ATT
131072-word
32-pin
HN27V101ATT
HN27V101AFP
HN27V101AFP-25
HN27V101ATT-25
Hitachi DSA00515
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HN27V101AFP
Abstract: HN27V101AFP-25 HN27V101ATT HN27V101ATT-25
Text: HN27V101AFP/ATT Series 131072-word x 8-bit CMOS One Time Electrically Programmable ROM with Low VCC ADE-203Rev. 0.0 Dec. 1, 1995 Description The HN27V101AFP/ATT series are 131072-word × 8-bit one time electrically programmable ROM. Initially, all bits of the HN27V101AFP/ATT series are in the "1" state (output high). Data is introduced
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HN27V101AFP/ATT
131072-word
ADE-203Rev.
32-pin
HN27V101ATT
HN27V101AFP
HN27V101AFP-25
HN27V101ATT
HN27V101ATT-25
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HM6287HL-35
Abstract: HM62256BL-10 HM628128AL-5 HM6264AL-15 HM6287-70 HM621100AL-20 SP 1191 hm6285128 HM62V256L-8 HM658128
Text: Quick Reference Guide to Hitachi IC Memories Contens MOS RAM MOS Static RAM Static RAM Module MOS Pseudo Static RAM Application Specific Memory Synchronous Graphic RAM Dynamic RAM Module MOS Dynamic RAM Synchronous Dynamic RAM MOS ROM MOS Mask ROM MOS EEPROM
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DATASHEET OF IC 723
Abstract: HN58C256 Series dynamic ram nmos 262144 HN27C4096AG HN58C1001 book ic 555 HN58C1001 Series HN58C256 HN624116 HN27C256AG
Text: CONTENTS • Quick Reference Guide to Hitachi IC Memories . 7 • MOS RAM.
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3524CP
Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
Text: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS
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HB56U132
HB56H132
HB56U232
HB56H232
HN62W454B
512kx8
256kx16
HN62W4416N
16Mbit
1Mx16
3524CP
2MX40
RAM128KX8 DIP
HM624256
HM62832
16Mbit FRAM
Dram 168 pin EDO 8Mx8
hm62256
flash 32 Pin PLCC 16mbit
HN27C1024
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transistor A7
Abstract: HM5116100 HM534251B HM538123B HM62256 HM658512A low vce transistor hitachi eprom Hitachi DSA00503 Hitachi HM62256
Text: Application 1. Static RAM 1.1 Static RAM Memory Cell A memory cell used in Hitachi static RAM consists of 4 NMOS transistors and 2 load resistors as shown in Figure 1-1. The data in the cell can be retained as long as power is supplied, and read out without being
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HN58C256 Series
Abstract: HN58V1001 hm514270a hm62256a HM628512 HN58C1001 Series DP-32 HN27C4096A HN62442 HM658512
Text: Package Information Contents Dual-in-line-Plastic Applicable Ics CERDIP Applicable Ics Zigzag-in-line Plastic Applicable Ics Flat Package Applicable Ics Chip Carrier Applicable Ics Package Information Dual-in-line Plastic Unit: mm • DP-18C 22.26 22.86 Max
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DP-18C
DP-20N
DP-22N
16160A
HM5118160A
HM51W18160A
CP-44
HN27C1024H
HN27C4096
HN62444
HN58C256 Series
HN58V1001
hm514270a
hm62256a
HM628512
HN58C1001 Series
DP-32
HN27C4096A
HN62442
HM658512
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SC-606-B
Abstract: HM62256B MS-024BB HM6207H HM6208H HM6264B HM6287 HM6288 HM9264B 024bb
Text: Package Information There are four types of package for the Hitachi IC Memories, Plastic Mold DIP, CERDIP, Flat Package and Chip Carrier. Please select a suitable package in consideration of your circumstance. When you use the package that has the material variation, please write down the package name in a form in
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DP-22N
HM6287
DP-22NB
HM6288
HM6208H
DP-24NC
HM6207H
DP-28
HM62256B
SC-606-B
MS-024BB
HM6264B
HM9264B
024bb
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27c101a
Abstract: No abstract text available
Text: H N 2 7 V 1 0 1 A S e rie s Preliminary 131072-W ord X 8-Blt C M O S O n e T im e E le c tr ic a lly P ro g ram m a b le RO M # H IT A C H I The Hitachi H N 2 7 V 1 0 IA is a 131072-word x 8 bit one time electrically programmable ROM . Initially, all bits of the HN27V101A arc in the "1"
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31072-W
HN27V101ATT-20
HN27V101ATT-25
131072-word
HN27V101A
32-pin
400-mil
TTP-32D)
27c101a
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Untitled
Abstract: No abstract text available
Text: H N 2 7 V 1 0 1 A Preliminary S e r ie s 1M 128K x 8-bit OTP EPROM • DESCRIPTION The Hitachi HN27V101A is a 1-Megabit One-Time Programmable Electrically Programmable Read Only Memory organized as 131,072 x 8-bits. The HN27V101A features a low power supply voltage and low
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HN27V101A
32-lead
HN27C101A
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HN27V101AFP-25
Abstract: pgri TTP-32P
Text: H N 2 7 V 1 0 1 A Preliminary S e r ie s 1M 128K x 8-bit OTP EPROM • DESCRIPTION The Hitachi HN27V101A isa 1-MegabitOne-Time Programmable Electrically Programmable Readonly Memory organized as 131,072 x 8-bits. The HN27V101A features a low power supply voltage and low
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HN27V101A
32-lead
HN27C101A
A10-A16
HN27V101AFP-25
pgri
TTP-32P
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27C101
Abstract: No abstract text available
Text: HN27V101A Series P re lim in a ry 1M 128K x 8-bit OTP EPROM • DESCRIPTION The Hitachi HN27V101A is a 1-MegabitOne-Time Programmable Electrically Programmable Read Only Memory organized as 131,072 x 8-bits. The HN27V101A features a low power supply voltage and low
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HN27V101A
HN27V101
32-lead
HN27C101A
27C101
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Untitled
Abstract: No abstract text available
Text: HN27V101ATT/ARR Series Preliminary 131072-Word x 8-Bit CMOS One Time Electrically Programmable ROM with Low Vc c The H N 27V 101 ATT/ARR series are 131072-word x 8-bit one time electrically programmable ROM. Initially, all bits o f the H N 27V 101 ATT/ARR series
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HN27V101ATT/ARR
131072-Word
131072-word
32-pin
HN27V100ATT/ARR
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HM51W16405
Abstract: No abstract text available
Text: Package Information There are four types of package for the Hitachi IC Memories, Plastic Mold DIP, CERDIP, Flat Package and Chip Carrier. Please select a suitable package in consideration o f your circumstance. When you use the package that has the material variation, please write down the package name in a form in
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DP-22N
DP-22NB
HM6287
HM6288
DP-24NC
DP-28
HM6208H
HM6207H
HM62256B
HM51W16405
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SC 2272
Abstract: No abstract text available
Text: Package Information There are four types of package for the Hitachi IC Memories, Plastic Mold DIP, CERDIP, Flat Package and Chip Carrier. Please select a suitable package in consideration o f your circumstance. When you use the package that has the material variation, please write down the package name in a form in
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DP-22N
DP-22NB
HM6287
HM6288
DP-24NC
HM6208H
HM6207H
DP-28
HM62256B
SC 2272
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Untitled
Abstract: No abstract text available
Text: Line Up o f Hitachi IC M emories C la s s ific a tio n T o ta l b it 4M- SRAM- V o lta g e H O rg a n iz a tio n w o rd X bit T yp e 3.3V- 512kx8- HM62W8512A Series 12 1 5V — 512kx8- HM628512A Series - 133 HM628512 S e rie s . 145 HM6741Q0H Series
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512kx8512kx8r
HM62W8512A
HM628512A
HM628512
HM6741Q0H
HM671400H
HM62V8128B
HM62V8128
HM62W1664HB
HM62W1664H
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hitachi eprom
Abstract: transistor k512
Text: Application 1. Flash Memory 1.1 Features and Application of Flash Memory Among a variety of large-capacity memory technologies, flash memory provides three major features, as illustrated in Figure 1-1. They are 1 lower power consumption and high reliability in tough
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AMD AM2 pin
Abstract: M5M270100P Hitachi Scans-001
Text: - 140 — P 5 7 1 0 0 0 X ïa J a JK W æ £ it £ <°c> A -, f- > y « tt « VDD A M tu ü / m Ci max pF V O L / I VOL max (V/mA) æ € æ V O H / I VOH min (V/mA) Co max (PF) TOH max (ns) TOR max (ns) TOD max (ns) 170 170 65 50 4. 5 - 5 . 5 30/1.0 0.8
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Aih27C100
AaZTClOO-175
27C100-200
27C100-205
taZTC10a-250
072X8)
P571000
Pin32
072X8
AMD AM2 pin
M5M270100P
Hitachi Scans-001
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eprom 2904
Abstract: 4502 C DRAM 64kx16
Text: Line Up of Hitachi IC Memories C la s s ific a tio n T o ta l b it 4M - S R AM - H O r g a n iz a tio n w o r d x b it V o lta g e Type 3 .3 V - 512k x 8 - HM62W8512A Series 121 5V — 512k x 8 - HM628512A Series - 133 HM628512 S e r ie s . 145 r —
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128kx8n
128kX
128kx8Type
HM62W8512A
HM628512A
HM628512
HM674100H
HM671400H
HM62V8128B
HM62V8128
eprom 2904
4502 C
DRAM 64kx16
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EDR-7311
Abstract: MS-024BB MO-142BO HN27C256A
Text: Package Information There are four types of package for the Hitachi IC Memories, Plastic Mold DIP, CERDIP, Flat Package and Chip Carrier. Please select a suitable package in consideration o f your circumstance. When you use the package that has the material variation, please write down the package name in a form in
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DP-22N
DP-22NB
HM6287
HM6288
DP-24NC
HM6208H
HM6207H
DP-28
HM62256B
EDR-7311
MS-024BB
MO-142BO
HN27C256A
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mask programmable rom
Abstract: hn27c1024hg 524288-WORD 262144-WORD
Text: Contents • L ine U p o f H itachi IC M e m o rie s. 7 • P ackage In fo rm a tio n s. 15
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