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    HN1D02F Price and Stock

    Toshiba America Electronic Components HN1D02FU,LF

    DIODE ARRAY GP 80V 100MA US6
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    DigiKey HN1D02FU,LF Reel 6,000 3,000
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    HN1D02FU,LF Cut Tape 2,670 1
    • 1 $0.36
    • 10 $0.222
    • 100 $0.1396
    • 1000 $0.09214
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    HN1D02FU,LF Digi-Reel 1
    • 1 $0.36
    • 10 $0.222
    • 100 $0.1396
    • 1000 $0.09214
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    Avnet Americas HN1D02FU,LF Reel 20 Weeks 3,000
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    • 10000 $0.0596
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    Mouser Electronics HN1D02FU,LF 3,414
    • 1 $0.36
    • 10 $0.219
    • 100 $0.104
    • 1000 $0.091
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    Quest Components HN1D02FU,LF 2,400
    • 1 $0.36
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    • 100 $0.108
    • 1000 $0.072
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    Toshiba America Electronic Components HN1D02FU(T5L,F,T)

    DIODE ARRAY GP 80V 100MA ES6
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    DigiKey HN1D02FU(T5L,F,T) Cut Tape 8 1
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    HN1D02FU(T5L,F,T) Reel
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    HN1D02FU(T5L,F,T) Digi-Reel 1
    • 1 $0.4
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    Toshiba America Electronic Components HN1D02F(TE85L,F)

    DIODE ARRAY GP 80V 100MA SM6
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    DigiKey HN1D02F(TE85L,F) Digi-Reel 1
    • 1 $0.38
    • 10 $0.23
    • 100 $0.1448
    • 1000 $0.0957
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    HN1D02F(TE85L,F) Cut Tape 1
    • 1 $0.38
    • 10 $0.23
    • 100 $0.1448
    • 1000 $0.0957
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    HN1D02F(TE85L,F) Reel 3,000
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    Mouser Electronics HN1D02F(TE85L,F) 10,915
    • 1 $0.39
    • 10 $0.235
    • 100 $0.128
    • 1000 $0.099
    • 10000 $0.065
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    Chip1Stop HN1D02F(TE85L,F) 6,000
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    • 100 $0.337
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    Toshiba America Electronic Components HN1D02FE,LF

    Diodes - General Purpose, Power, Switching Switching diode, 80V ES6 0.1A High Speed
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics HN1D02FE,LF 3,000
    • 1 $0.38
    • 10 $0.228
    • 100 $0.144
    • 1000 $0.095
    • 10000 $0.061
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    Toshiba America Electronic Components HN1D02FU,LF(B

    HN1D02FU,LF(B
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    Verical HN1D02FU,LF(B 2,850 863
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    • 1000 $0.0848
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    Quest Components HN1D02FU,LF(B 2,280
    • 1 $0.58
    • 10 $0.58
    • 100 $0.261
    • 1000 $0.174
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    Find more HN1D02F price and stock on Findchips.com

    HN1D02F Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HN1D02F Toshiba Common Cathode Diode Array Original PDF
    HN1D02F Toshiba Japanese - Diodes Original PDF
    HN1D02F Toshiba DIODE Scan PDF
    HN1D02FE Toshiba Quad Silicon Epitaxial Planar Diode Original PDF
    HN1D02FE,LF Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V CC 6 ES6 Original PDF
    HN1D02F(TE85L,F) Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V CC 6 SM6 Original PDF
    HN1D02FU Toshiba Common Cathode Diode Array Original PDF
    HN1D02FU Toshiba Japanese - Diodes Original PDF
    HN1D02FU Unknown Silicon Diode Scan PDF
    HN1D02FU Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    HN1D02FU Toshiba DIODE Scan PDF
    HN1D02FU,LF Toshiba Semiconductor and Storage Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY GP 80V 100MA US6 Original PDF
    HN1D02FU(T5L,F,T) Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V CC 6 US6 Original PDF

    HN1D02F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HN1D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Application Unit: mm z HN1D02FU is composed of 2 unit of cathode common. z Low forward voltage : VF 3 = 0.90V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)


    Original     		PDF HN1D02FU HN1D02FU

    HN1D02FU

    Abstract: No abstract text available
    Text: HN1D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Application Unit in mm z HN1D02FU is composed of 2 unit of cathode common. z Low forward voltage : VF 3 = 0.90V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)


    Original     		PDF HN1D02FU HN1D02FU

    HN1D02FE

    Abstract: HN1D02FU
    Text: HN1D02FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FE Ultra High Speed Switching Application Unit in mm z The HN1D02FU is composed of 2 common cathode units. z Low forward voltage : VF 3 = 0.90V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)


    Original     		PDF HN1D02FE HN1D02FU HN1D02FE

    HN1D02FE

    Abstract: HN1D02FU
    Text: HN1D02FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FE Ultra High Speed Switching Application Unit in mm z The HN1D02FU is composed of 2 common cathode units. z Low forward voltage : VF 3 = 0.90V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)


    Original     		PDF HN1D02FE HN1D02FU HN1D02FE

    Untitled

    Abstract: No abstract text available
    Text: HN1D01FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FE Ultra High Speed Switching Application Unit in mm HN1D02FU is composed of 2 unit of cathode common. Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance


    Original     		PDF HN1D01FE HN1D02FU

    Untitled

    Abstract: No abstract text available
    Text: HN1D02F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02F Unit: mm Ultra-High-Speed Switching Applications z The HN1D02F is composed of two 2 cathode common units. z Low forward voltage : VF (3) = 0.90 V (typ.) z Fast reverse recovery time : trr = 1.6 ns (typ.)


    Original     		PDF HN1D02F HN1D02F

    HN1D02F

    Abstract: No abstract text available
    Text: HN1D02F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02F Unit: mm Ultra High Speed Switching Application HN1D02F is composed of 2 unit of cathode common. Low forward voltage : VF 3 = 0.90V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance


    Original     		PDF HN1D02F HN1D02F

    Untitled

    Abstract: No abstract text available
    Text: HN1D02FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FE Ultra High Speed Switching Application Unit: mm z The HN1D02FU is composed of 2 common cathode units. z Low forward voltage : VF 3 = 0.90V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)


    Original     		PDF HN1D02FE HN1D02FU

    Untitled

    Abstract: No abstract text available
    Text: HN1D01FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FE Ultra High Speed Switching Application Unit in mm z HN1D02FU is composed of 2 unit of cathode common. z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)


    Original     		PDF HN1D01FE HN1D02FU

    HN1D02F

    Abstract: No abstract text available
    Text: HN1D02F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02F Unit: mm Ultra High Speed Switching Application l HN1D02F is composed of 2 unit of cathode common. l Low forward voltage : VF 3 = 0.90V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance


    Original     		PDF HN1D02F HN1D02F

    HN1D02FE

    Abstract: HN1D02FU
    Text: HN1D02FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FE Ultra High Speed Switching Application Unit in mm The HN1D02FU is composed of 2 common cathode units. Low forward voltage : VF 3 = 0.90V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.)


    Original     		PDF HN1D02FE HN1D02FU HN1D02FE

    HN1D01FE

    Abstract: HN1D02FU
    Text: HN1D01FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FE Ultra High Speed Switching Application Unit in mm HN1D02FU is composed of 2 unit of cathode common. Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance


    Original     		PDF HN1D01FE HN1D02FU HN1D01FE

    Untitled

    Abstract: No abstract text available
    Text: HN1D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Application Unit in mm HN1D02FU is composed of 2 unit of cathode common. Low forward voltage : VF 3 = 0.90V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance


    Original     		PDF HN1D02FU HN1D02FU

    HN1D02F

    Abstract: No abstract text available
    Text: HN1D02F 東芝ダイオード シリコンエピタキシャルプレーナ形ダイオード HN1D02F ○ 超高速スイッチング用 z z z z 単位: mm カソードコモンを 2 ユニット内蔵 順方向特性が良い。 : VF 3 = 0.90V (標準)


    Original     		PDF HN1D02F SC-74 100mA HN1D02F

    4558 dd

    Abstract: 5W393 4558 equivalent TA75558 LM358 TA75S393 TA75393 LM393 4558 4558 8 PIN
    Text: F5/F6 Type No. 1 1 öS Max. Rating V r V SMV/SM6 USV/US8 Structure P(mW)* IO(mA) SMV/SM6 USVAJS6 Connection Mark 1SS308 80 100 300 200 1SS181 X 2 A1 1SS309 80 100 300 200 1SS184 X 2 A2 HN1D01F HN1D01FU 80 100 300 200 1SS181 X 2 HN1D02F HN1D02FU 80 100 300


    OCR Scan     		PDF 1SS308 1SS181 1SS309 1SS184 HN1D01F HN1D01FU HN1D02F HN1D02FU 1SS184X2 4558 dd 5W393 4558 equivalent TA75558 LM358 TA75S393 TA75393 LM393 4558 4558 8 PIN

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN1D02F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN1D02F Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • HN1D02F is composed of 2 unit of cathode common. Low Forward Voltage : Vp 3 = 0.90V (Typ.) Fast Reverse Recovery Time : trr= 1.6ns (Typ.)


    OCR Scan     		PDF HN1D02F 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN1D02F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE h N1 n ni F m m m 'm m mmr w • ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm + 0.2 • HN1D02F is composed of 2 u n it of cathode common. Z.0-0.3 • Low Forward Voltage : V f 3 —0.90V (Typ.)


    OCR Scan     		PDF HN1D02F HN1D02F 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN1D02F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN1D02F Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • HN1D02F is composed of 2 unit of cathode common. Low Forward Voltage : Vp 3 = 0.90V (Typ.) Fast Reverse Recovery Time : trr= 1.6ns (Typ.)


    OCR Scan     		PDF HN1D02F HN1D02F 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: HN1D02FU TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • HN1D02FU is composed of 2 Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Unit in mm unit of cathode common.


    OCR Scan     		PDF HN1D02FU D02FU HN1D02FU 961001EAA2'

    HN1D02F

    Abstract: No abstract text available
    Text: TOSHIBA HN1D02F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN1D02F Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • HN1D02F is composed of 2 unit of cathode common. Low Forward Voltage : Vp 3 = 0.90V (Typ.) Fast Reverse Recovery Time : trr= 1.6ns (Typ.)


    OCR Scan     		PDF HN1D02F HN1D02F 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN1D02FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE h n i n m m m 'm m mmr n 7 F 11 ULTRA HIGH SPEED SWITCHING APPLICATION. • HN1D02FU is composed of 2 un it of cathode common. • Low Forward Voltage • Fast Reverse Recovery Time : t r r = 1.6ns Typ.


    OCR Scan     		PDF HN1D02FU HN1D02FU

    HN1D02FU

    Abstract: No abstract text available
    Text: TOSHIBA HN1D02FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. • HN1D02FU is composed of 2 unit of cathode common. • Low Forward Voltage • Fast Reverse Recovery Time : trr= 1.6ns Typ. • Small Total Capacitance


    OCR Scan     		PDF HN1D02FU N1D02FU HN1D02FU 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: HN1D02FU TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • HN1D02FU is composed of 2 Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Unit in mm unit of cathode common.


    OCR Scan     		PDF HN1D02FU D02FU HN1D02FU 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: SILICO N EPITAXIAL PLA N A R T Y P E HN1D02F ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm + 0.2 2 .8 -0 3 . HN1D02F is composed of 2 unit of cathode common . Low Forward Voltage +02 Vp=0.90V Typ. 1 .6 - 0 .1 . Fast Reverse Recovery Time trr= l .6ns(Typ.)


    OCR Scan     		PDF HN1D02F HN1D02F 100mA