HMF2402
Abstract: HMF-2400 hmf 2402 hmf-2402 power transistor gaas hmf2400
Text: HARRIS m SEMICONDUCTOR r V T? D ^ | 4 3 D a E b ci 0000035 ' T ' S I ~ * L 5 | HMF-2400 POWER GaAs FET — * 2-14 GHz 6.0dB Gain N O V EM B ER 1987 J PRODUCT DATA HARRIS MICROWAVE SEMICONDUCTOR FEATURES DEVICE OUTLINE +30.5dBm Typical Linear Power □ High Efficiency Performance, 30%
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HMF-2400
9-24000-B®
HMF2402
hmf 2402
hmf-2402
power transistor gaas
hmf2400
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HMF-24000-200
Abstract: No abstract text available
Text: HARRIS ¿ 2 flu S E M I C O N D U C T O R H A R R I S 4bE » • 43022^ OOGQlfll □ « H M S H MF-2 4 0 0 G 100 -2 0 0 Power Optimized GaAs FET 2-14 GHz PRODUCT DATA Features • +30.5 dBm Output Power -200 with 5.5 dB Associated Gain at 8 GHz • Large Cross Section Ti/Pt/Au Gates
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Optimiz80
HMF-24000-200
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC J*j HARRIS LOE D • 7 ^ 4 1 4 2 GGllflMb E3G ■ SHGK HMF-24000 100 -,200 Power Optimized GaAs FET 2-14 GHz PRODUCT DATA Features • +30.5 dBm Output Power -200 with 5.5 dB Associated Gain at 8 GHz Large Cross Section Ti/Pt/Au Gates
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HMF-24000
Th680
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hmf-2402
Abstract: hmf-24 HMF24020-200
Text: SAMSUNG ELECTRONICS INC HARRIS büE D 7^4142 D011Ö63 IGfi HMF-24020 -200 Power Optimized GaAs FET 2-12 GHz PRODUCT DATA Features • +30.5 dBm Output Power with 5 dB Associated Gain at 8 GHz Chip Devices are Selected from Standard Military Grade Wafers • Power Optimized Design Provides
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HMF-24020
F-24020-200
HMF24000-200.
hmf-2402
hmf-24
HMF24020-200
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HMF24020-200
Abstract: F24000 hmf-2402 harris 723 HMF-24020
Text: 4bE D HARRIS Mil SEMICONDUCTOR HARRIS • 000052^ 5 ■ HMS HMF-24020 Power Optimized GaAs FET PRODUCT DATA 2 -1 2 GHz Features * +30.5 dBm Output Power with 5 dB Associated Gain at 8 GHz * Chip Devices are Selected from Standard Military Grade Wafers
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HMF-24020
F-24020-200
F24000-200.
HMF24020-200
F24000
hmf-2402
harris 723
HMF-24020
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC ÍE H A R R IS 7TbmM2 DOiiaab t i ? bOE HMF-24030 -200 Power Optimized GaAs FET 2-10 GHz PRODUCT DATA Features • +30.5 dBm Output Power with 5 dB Associated Gain at 8 GHz Chip Devices are Selected from Standard Military Grade Wafers
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HMF-24030
HMF-24030-200
HMF24000-200.
HMF-24030-200
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hmf-24
Abstract: No abstract text available
Text: HARRIS 33 H NW S E M I C O N D U C T O R a r r is 4bE D • M B O S S b 11! 0 0 0 0 2 3 3 4 ■ H M F-24030 00 Power Optimized GaAs FET 2-10 GHz PRODUCT DATA Features < +30.5 dBm Output Power with 5 dB Associated Gain at 8 GHz • Chip Devices are Selected from
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F-24030
HMF-24030-200
HMF24000-200.
430EEbT
D00053S
HMF-24030-200
hmf-24
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