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    hmf-0302

    Abstract: HMF0302
    Text: HARRIS MU S E M I C O N D U C T O R Jgj H A R R I S HbE D • 43D22bS OOOOlflT 5 ■ H M S HMF-03020 Power Optimized GaAs FET 2-14 GHz PRODUCT DATA Features • +21.5 dBm Output Power with 8 dB Associated Gain at 8 GHz * Chip Devices are Selected from Standard Military Grade Wafers


    OCR Scan     		PDF 43D22bS HMF-03020 HMF-03020 HMF03000. T--31--25 hmf-0302 HMF0302

    XL 1402

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC Jg HARRIS bOE D • 7 ^ 4 1 4 2 D011Ô52 534 M S H Û K HMF-03020 Power Optimized GaAs FET 2-14 GHz PRODUCT DATA Features • +21.5 dBm Output Power with 8 dB Associated Gain at 8 GHz * Chip Devices are Selected from Standard Military Grade Wafers


    OCR Scan     		PDF HMF-03020 HMF-03020 HMF03000. proce866 XL 1402