DATA SHEET OF IC 317
Abstract: Test-Element-Group Thermal Test-Element-Group hitachi ic hitachi HM514256 HM514256 28-pin SOJ SRAM high speed thyristor HM62256 Reliability of Hitachi IC Memories
Text: Reliability of Hitachi IC Memories Contents 1. Structure 2. Reliability 3. Reliability of Semiconductor Devices Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern,
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77106
Abstract: CRACK DETECTION PATTERNS HM628128 reliability test data cbv 2 10910 statistical Physics Hitachi DSA00503
Text: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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Untitled
Abstract: No abstract text available
Text: HM5116400 Series Product Preview 4,194,304-Word x 4-Bit Dynamic Random Access Memory • DESCRIPTION HM5116400J Series The Hitachi HM 5116400 is a C M O S dynamic R A M organized 4,194,304 words x 4 bits. It employs the most advanced C M O S technology for high performance and
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HM5116400
304-Word
HM5116400J
ns/70
ns/80
ns/100
mW/440
mW/385
mW/330
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Untitled
Abstract: No abstract text available
Text: HM5116400 Series 4,194,304-Word x 4-Bit 4 4 cib2Q3 o o i a a ^ a SIE » H T - ^ 2 3 - 19 4?a « h i t e Product Preview H I TA C H I / L O G I C / A R R A Y S / M E M Dynamic Random Access Memory • DESCRIPTION HM5116400J Series The Hitachi HM5116400 is a CMOS dynamic RAM organized 4,194,304 words x
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HM5116400
304-Word
HM5116400J
ns/70
ns/80
ns/100
mW/440
mW/385
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304X4
Abstract: 44C4000 KM44C4100-7 KM44C4000-6 UPD4217400-70 UPD4216400-80 K1174 Hitachi Scans-001
Text: - 1 6 M CMOS A 4 m & tt £ CC TRAC max ns) [ Dynami c -y * TRCY TÇAD TAH (ns) (ns) (ns) R A M ( 4, > •? ít ft TP mir. (ns) TWCY min (ns) TDH nin (ns) TRWC min (ns) 194, % V D D or V C C (V) 3 0 4 x 4) I DD max (raA) 2 8 P I N X m I DD STANDBY SB/1 SB2)
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304x4)
28PIN
HM5116400J/Z
IM5116400J/Z/TT/RR-6
HM5I16400J/Z/TT/RR-7
4K/64
UPD4216400-80
UPD4215400-10
304X4
44C4000
KM44C4100-7
KM44C4000-6
UPD4217400-70
K1174
Hitachi Scans-001
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A10q
Abstract: HM5116400Z-6 ice power 200 asc HM5116400Z HM5116400TT-7 CSR BLE HM5116400Z8
Text: blE D • HMTbSGB DD23 351 E7M ■ H I T 2 H M 511 6 4 0 0 S e r i e s - HITACHI/ LOGIC/ARRAYS/MEM 4,194,304-w ord x 4-bit D ynam ic R andom A c c e s s Memory The H itachi H M 5116400 is a CMOS dynamic RAM organized 4,194,304 w ords x 4 bits. It employs the most advanced CMOS technology for
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DD23351
HM5116400
304-word
mW/385
mW/358
16-bit
mo400
M4Tb203
A10q
HM5116400Z-6
ice power 200 asc
HM5116400Z
HM5116400TT-7
CSR BLE
HM5116400Z8
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80ns55
Abstract: No abstract text available
Text: NEWPRODUCT HB56A44QB Series 4 ,194,304-Word X 40-B it H igh D ensity D ynam ic RAM Module Under development - 0H IT A C H I R ev.3 M ay. 2 2 .1 9 9 2 D e sc r ip tio n T h e H B 56A 440B is a 4M X 40 d y n am ic RAM m o d u le, m o u n te d 10 pieces o f 16M bit DRAM
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HB56A44QB
304-Word
5116400J
72-pin
e45/60ns-
40/46/50/60ns
50/68/65/80ns-
55/63/70/80ns
55/63/70/85ns
80ns55
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Untitled
Abstract: No abstract text available
Text: marni N EW PRODUCT HB56A840B Series 8,388,608-Word X 40-Bit High Density Dynamic RAM Module - Under d evelop m en t - H IT A C H I Rev.2 May.22.1992 D escrip tion T he H B 56A 840B is a 8M X 40 d y n am ic RAM m o d u le, m o u n te d 20 pieces o f 16M bit DRAM
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HB56A840B
608-Word
40-Bit
72-pin
55/63/70/80ns
85/9B
55/63/70/85ns-
60/68/75/85ns
750/650/550/500m
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M5116400
Abstract: No abstract text available
Text: H M 5116400 S e rie s Product Preview 4,194,304-Word x 4-Bit Dynamic Random A c c e s s Memory • DESCRIPTION The Hitachi H M 5116400 is a C M O S dynamic R A M organized 4,194,304 words x 4 bits. It employs the most advanced C M O S technology for high performance and
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HM5116400
304-Word
ns/70
ns/80
ns/100
mW/330
M5116400
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flash 32 Pin PLCC 16mbit
Abstract: 398x
Text: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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Untitled
Abstract: No abstract text available
Text: ò rà er Alnmbe.r Mi/Tb^T NEW PRODUCT HB56A840B Series 8,388,608-Word X 40-Bit High Density Dynamic RAM Module - Under development - ^ H IT A C H I Rev.2 May. 22.1992 Description The HB56A840B is a 8M X 40 dynamic RAM module, mounted 20 pieces of 16Mbit ORAM
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HB56A840B
608-Word
40-Bit
16Mbit
HM5116400J)
72-pin
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CBV2
Abstract: 27x10
Text: Reliability o f Hitachi IC Memories 1. Structure IC m em ory devices are classified as N M O S type, C M O S type, and B i-C M O S type. T here are advantages to it's circuit design, layout pattern, degree o f integration, and m anufacturing process. A ll H itachi m em ories are produced using standardized design, m anufacturing, and inspection techniques.
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CBV2
Abstract: hitachi ic thyristor TT 570 N Reliability of Hitachi IC Memories
Text: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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CBV2
Abstract: HN27C301
Text: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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