DATA SHEET OF IC 317
Abstract: Test-Element-Group Thermal Test-Element-Group hitachi ic hitachi HM514256 HM514256 28-pin SOJ SRAM high speed thyristor HM62256 Reliability of Hitachi IC Memories
Text: Reliability of Hitachi IC Memories Contents 1. Structure 2. Reliability 3. Reliability of Semiconductor Devices Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern,
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HB56A19B
Abstract: No abstract text available
Text: HB56A19 Series-1,048,576-words x 9 bits High Density Dynamic R A M Module The H B 5 6A 19 is a 1M x 9 dynamic R A M module, mounted 9 pieces of 1-Mbit D R A M HM511000JP sealed in SO J package. A n outline of the H B56A 19 is 30-pin single-in-line package having
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HB56A19
576-words
HM511000JP)
30-pin
HB56A19B)
HM511000JP
54niu.
10Qmin.
a005i
HB56A19B
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Untitled
Abstract: No abstract text available
Text: HB56A19A/AT/B-6H/7H/8A/10A/12A 1,048,576-Word x 9-Bit High Density Dynamic RAM Module P in N o . • DESCRIPTION The HB56A19 is a 1M x 9 dynamic RAM module, mounted nine 1-Mbit DRAM HM511000JP sealed in SOJ package. An outline of the HB56A19 is 30-pin single in-line package having Lead types
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HB56A19A/AT/B-6H/7H/8A/10A/12A
576-Word
HB56A19
HM511000JP)
30-pin
HB56A19A,
HB56A19AT)
HB56A19B)
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Untitled
Abstract: No abstract text available
Text: HB56A18 Series 1,048,576 words x 8 bits High Density Dynamic RAM Module The HB56A18 is a 1M x 8 dynamic RAM module, mounted 8 pieces of 1M-bit DRAM HM511000JP sealed in SO J package. An outline of the HB56A18 is 30-pin single-in-line package having two types; Lead type (HB56A18A) and Socket type (HB56A18B).
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HB56A18
HM511000JP)
30-pin
HB56A18A)
HB56A18B)
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Untitled
Abstract: No abstract text available
Text: HB56A18A/AT/B-6H/7H/8A/10A/12A 1,048,576-Word x 8-Bit High Density Dynamic RAM Module P in N o . The HB56A18 is a 1M x 8 dynamic RAM module, mounted eight 1-Mbit DRAM HM511000JP sealed in SOJ package. An outline of the HB56A18 is 30-pin single in-line package having Lead types
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HB56A18A/AT/B-6H/7H/8A/10A/12A
576-Word
HB56A18
HM511000JP)
30-pin
HB56A18A,
HB56A18AT)
HB56A18B)
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Untitled
Abstract: No abstract text available
Text: HB56A18A/AT/B-6H/7H/8A/10A/12A 1,048,576-Word x 8-Bit High Density Dynamic RAM Module The HB56A18 is a 1M x 8 dynamic RAM module, mounted eight 1-Mbit DRAM HM511000JP sealed in SOJ package. An outline of the HB56A18 is 30-pin single in-line package having Lead types
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HB56A18A/AT/B-6H/7H/8A/10A/12A
576-Word
HB56A18
HM511000JP)
30-pin
HB56A18A,
HB56A18AT)
HB56A18B)
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HB56A19B
Abstract: HB56A19B8A zp 1401 HB56A19B10A SIMM 30-pin HB56A19A-12 HB56A19A-12A HB56A19
Text: HB56A19 Series 1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56A19 is a 1M x 9 dynamic RAM module, mounted nine 1-Mbit DRAM HM511000JP sealed in SOJ package. An outline of the HB56A19 is 30-pin single in-line package having Lead types (HB56A19A, HB56A19AT), Socket type
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HB56A19
576-Word
HM511000JP)
30-pin
HB56A19A,
HB56A19AT)
HB56A19B)
HB56A19B
HB56A19B8A
zp 1401
HB56A19B10A
SIMM 30-pin
HB56A19A-12
HB56A19A-12A
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HM511000J
Abstract: No abstract text available
Text: HB56D136B/S Series 1,048,576-W ord x 36-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The H B 5 6 D 1 3 6 B /S B /B R /S B R /B S /S B S is a 1M x 36 dy namic RAM module, mounted 8 pieces of 4 Mbit DRAM H M 514400JP/AJ sealed in S O J package and 4 pieces of
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HB56D136B/S
36-Bit
514400JP/AJ)
HM511000JP)
HM511000ATS)
HB56D136SB/
72-pin
HB56D136B/
HB560136B/S
HM511000J
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rca thyristor manual
Abstract: HN623258 101490
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
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Untitled
Abstract: No abstract text available
Text: HITACHI/ LOGIC/ARRAYS/HEH S1E J> MM1bED3 DGlRlfib 577 IHIT2 HB56D136B/S Series-1,048,576-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56D136B/SB/BR/SBR/BS/SBS is a 1M x 36 dy namic RAM module, mounted 8 pieces of 4 Mbit DRAM
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HB56D136B/S
576-Word
36-Bit
HB56D136B/SB/BR/SBR/BS/SBS
HM514400JP/AJ)
HM511000JP)
HB56D136B/SB/BR/SBR)
HM511000ATS)
HB56D136SB/
HB56D136B/SB/BR/SBR/BS/SBS
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HM511000J
Abstract: No abstract text available
Text: • 44C,b2D3 nonni =i2s «hits HB56D236B S eries 2,097,152-Word x 36-Bit High Density Dynamic RAM Module ■ DESCRIPTION The HB56D236B is a 2M x 36 dynamic RAM module, mounted 16 pieces of 4 Mbit DRAM HM514400JP sealed in SOJ package and 8 pieces of 1 Mbit DRAM
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HB56D236B
152-Word
36-Bit
HM514400JP)
HM511000AJP)
72-pin
HM511000J
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Untitled
Abstract: No abstract text available
Text: HITACHI/ LOGIC/ARRAYS/HEH M41t.E03 S1E 0011500 7b6 HB56D236B/SB Series-n r - 2,097,152-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56D236B/SB/BS/SBS is a 2M x 36 dynamic RAM module, mounted 16 pieces of 4 Mbit DRAM
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HB56D236B/SB
152-Word
36-Bit
HB56D236B/SB/BS/SBS
HM514400JP/AJ)
HM511000JP)
HM511000ATS)
HB56D236SB/
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Untitled
Abstract: No abstract text available
Text: HB56D136B Series 1,048,576-Word x 36-Bit High Density Dynamic RAM Module I • DESCRIPTION PIN OUT The HB56D136B is a 1M x 36 dynamic RAM module, mounted 8 pieces of 4 Mbit DRAM HM514400JP sealed in SOJ package and 4 pieces of 1 Mbit DRAM (HM511000AJP) sealed in SOJ package. An outline of the
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HB56D136B
576-Word
36-Bit
HM514400JP)
HM511000AJP)
72-pin
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free transistor equivalent book 2sc
Abstract: HA13108 HL7801G HL7801E free thyristor equivalent book 2sc 2SC1707 HIGH POWER HIGH FREQUENCY CVD DIAMOND CHIP RESISTORS footprint HD44237 semi catalog pic micro weighing scale code example
Text: RELIABILITY 1. 1.1 R E L IA B IL IT Y R E L IA B IL IT Y C H A R A C T E R IS T IC S F O R S E M IC O N D U C T O R D E V IC E S Hitachi semiconductor devices are designed, manufactured and inspected so as to achieve a high level of reliability. Accordingly, system reliability can be improved by com
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514400J
Abstract: 511000a
Text: HB56D236B-8/10/12-2,097,152-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION PIN OUT T h e H B 56D 236B is a 2M x 36 dynam ic RA M module, mounted 16 pieces of 4M bit DR AM H M 514400JP sealed in SOJ package and 8 pieces of 1Mbit ORAM (HM 511000AJP) sealed in SOJ package. An
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HB56D236B-8
HB56D236B-10
HB56D236B-12
152-Word
36-Bit
514400JP)
511000AJP)
72-pin
D236B-8/10/12----------------------------
514400J
511000a
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Untitled
Abstract: No abstract text available
Text: HB56D136B-8/10/12 36-Bit DRAM 1,048,576-Word RAM Module x 36-Bit High Density Dynamic • PIN OUT ■ DESCRIPTION The HB56D136B is a 1M x 36 dynamic RAM module, mounted 6 pieces of 4Mbit DRAM HM514400JP sealed in SOJ package and 4 pieces of 1Mbit DRAM (HM511000AJP) sealed in SOJ package. An
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HB56D136B-8/10/12
36-Bit
576-Word
HB56D136B
HM514400JP)
HM511000AJP)
72-pin
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514400j
Abstract: 236b 511000a
Text: HB56D236B Series 2,097,152-Word x 36-Bit High Density Dynamic RAM Module • PIN OUT ■ DESCRIPTION T h e H B56D 236B is a 2M x 36 dynam ic R AM m odule, m ounted 16 pieces o f 4 M bit DRAM H M 514400JP sealed in SOJ package and 8 pieces o f 1 M bit DRAM
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HB56D236B
152-Word
36-Bit
514400JP)
511000AJP)
72-pin
514400j
236b
511000a
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101490
Abstract: P22n HM50464P-12 50464 ram
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY
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ADE-40
101490
P22n
HM50464P-12
50464 ram
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HM511000AJP8
Abstract: HM511000-12 HM511000P10S HM511000A HM511000AJP-10 HM511000 HM511000P-12 HM511000P HM511000S 11000AP
Text: H M S 1 1000S Series H M S 1 1000A Series 1048576-word x 1-bit C M O S Dynamic R A M The Hitachi HM511000S/A series is a CMOS dynamic RAM organized 1048576-word x 1-bit. HM511000S/A has realized higher density, higher performance and various functions by employing 1.3 ^tm CMOS process technology and some new
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1000S
1048576-word
HM511000S/A
18-pin
20-pin
HM511000AJP8
HM511000-12
HM511000P10S
HM511000A
HM511000AJP-10
HM511000
HM511000P-12
HM511000P
HM511000S
11000AP
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HB56D136br
Abstract: No abstract text available
Text: HB56D136B/S Series-1,048,576-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The H B56D 136B /S B/B R /S BR /B S /S BS is a 1M x 36 dy namic RAM module, mounted 8 pieces of 4 Mbit DRAM HM514400JP/AJ sealed in SOJ package and 4 pieces of
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HB56D136B/S
576-Word
36-Bit
HM514400JP/AJ)
HM511000JP)
HB56D136B/SB/BR/SBR)
HM511000ATS)
HB56D136SB/
136B/SB/BR
72-pin
HB56D136br
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HM511000
Abstract: dynamic ram 8 bit hm511000 HM511000P M511000 HM511000-12 HM511000-10 HM511000JP-12 DG 402 rp HM511000ZP-12 ir 2210 ic
Text: HM511000 Series 1048576-word x 1-bit CMOS Dynamic Random Access Memory The Hitachi HM511000 Series is a CMOS dynamic RAM organized 1,048,576-word x 1-bit. HM511000 has realized higher density, higher performance and various functions by employing 1.3/im CMOS process technology and some new CMOS circuit
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HM511000
1048576-word
576-word
HM511000,
18-pin
20-pin
dynamic ram 8 bit hm511000
HM511000P
M511000
HM511000-12
HM511000-10
HM511000JP-12
DG 402 rp
HM511000ZP-12
ir 2210 ic
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