transistor C3866
Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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HM10470
Abstract: No abstract text available
Text: H M 1 4 7 , H M 1 4 7 - 1 4096-word x 1-bit Fully Decoded Random Access Memory The HM10470 is ECL 10K compatible, 4096-words x 1-bit, read write random access memory developed for high speed systems such as scratch pads and control/buffer storages. The fabrication process is the Hitachi’s low capacitance, oxide isola
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4096-word
HM10470
4096-words
cerdip-18
F10470.
with10K
HM10470-1
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Untitled
Abstract: No abstract text available
Text: HM10470-20 4 0 9 6 *word x 1-bit Fully Decoded Random Access Memory The HM10470 it ECL 10K compatible, 4096-words x 1-bit, read/ write, random access memory developed for high speed systems such as scratch pads and control/buffer storages. The fabrication process uses the Hitachi's low capacitance, oxide
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HM10470-20
HM10470
4096-words
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lb 1645
Abstract: HM10470-20
Text: HM10470-20 4 0 9 6 -word x 1-bit Fully Decoded Random Access Memory The HM10470 is ECL 10K compatible, 4096-words x 1-bit, read/ write, random access memory developed for high speed systems such as scratch pads and control/buffer storages. The fabrication process uses the Hitachi's low capacitance, oxide
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HM10470-20
HM10470
4096-words
cerdip-18
F10470.
4096-word
lb 1645
HM10470-20
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Untitled
Abstract: No abstract text available
Text: HM10470-20 4 0 9 6 - word x 1-b it Fully D ecoded Random A c c e ss M em ory The HM10470 is EC L 10K compatible, 4096-words x 1-bit, read/ write, random access memory developed for high speed systems such as scratch pads and control/buffer storages. The fabrication process uses the Hitachi's low capacitance, oxide
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HM10470
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cerdip-18
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F10470
Abstract: HM10470 HM10470-20
Text: HM10470-20 4 0 9 6 - w ord x 1 - b it Fully D e c o d e d R and o m A c c e s s M e m o ry The H M 10470 is ECL 10K compatible, 4096-words x 1-bit, read/ write, random access memory developed for high speed systems such as scratch pads and control/buffer storages.
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HM10470-20
4096-word
HM10470
4096-words
cerdip-18
F10470.
F10470
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HN462532G
Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4
Text: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .
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Untitled
Abstract: No abstract text available
Text: H M 1 4 7 , H M 1 4 7 - 1 4096-word x 1-bit Fully Decoded Random Access Memory The HM 10470 is ECL 10K compatible, 4096-words x 1-bit, read write random access memory developed for high speed systems such as scratch pads and control/buffer storages. The fabrication process is the Hitachi's low capacitance, oxide isola
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4096-word
4096-words
cerdip-18
HM10470-1
HM10470,
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HD10131
Abstract: HD10125 HD10231 HD10116 HD100112 HD10K HD10130 HM10474
Text: CONTENTS • G E N E R A L I N F O R M A T I O N . 4 • Definition of Letter Symbols and Abbreviations.
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WD10K
HD100K
4096-word
HMJQG48G-
16384-word
HM100480F
HD10131
HD10125
HD10231
HD10116
HD100112
HD10K
HD10130
HM10474
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HN613256P
Abstract: HN27C301 1S00G CRACK DETECTION PATTERNS HN27256
Text: • RELIABILITY OF HITACHI 1C MEMORIES 1. ST RU CTU RE 1C memories are basically classified into bipolar type and MOS type and utilized effectively by their characteristics. The characteristic of bipolar memo ries is high speed but small capacity, instead, MOS
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HM6116L
Abstract: HM51256P HN62404P HM65256AP HN27C301G HN613128P hn623257 HM6147 HN27256P HN613128FP
Text: • PACKAGE INFORMATION • Dual-in-line Plastic Unit: mm {inch Scale 1/1 • D P -1 6 B • D P -1 8 19 2 Í0 756) 20 32m a , J L 2 54 - 0 .2 5 C 48 - O f <■ 0 !00 ' 0 0 10> ( o 0 19 ' 0 0 0 4 ) ■J-L 0 l5 ii '"To.OlO-.«» 2 54 * 0 25 □ Í8 • 0
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CG-20
CG-22A
CG-24
CG-28
HM6267CG
HM6287CG
HM6787CG
HM100490CG
HM100422CG,
HM100415CG
HM6116L
HM51256P
HN62404P
HM65256AP
HN27C301G
HN613128P
hn623257
HM6147
HN27256P
HN613128FP
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TCA965 equivalent
Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated
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DG211.
DG300
DG308
DG211
TCA965 equivalent
ULN2283
capacitor 473j 100n
UAF771
transistor GDV 65A
pbd352303
cm2716
TAA2761
TAA4761
ULN2401
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transistor cross reference
Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC
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MBM10470
Abstract: 1000M7A F10470
Text: February 1987 DM 10470/DM 10470A 4096-Bit 4096 x 1 ECL RAMs General Description Features The DM10470/DM10470A is a fully decoded 4096-bit, 10K and 10 KH compatible, ECL read/write random access memory designed for high-speed scratch pad and buffer storage applications. This device is organized as 4096
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DM10470/DM10470A
10470/DM
0470A
4096-Bit
DM10470/DM10470A
4096-bit,
DM10470
ns/200
DM10470A
MBM10470
1000M7A
F10470
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HM6788P-25
Abstract: 6788P s12045 28-pin SOJ SRAM
Text: • RELIABILITY OF HITACHI 1C MEMORIES 1. STRUCTURE IC memories are basically classified into bipolar type and MOS type and utilized effectively by their characteristics. The characteristic o f bipolar memo ries is high speed but small capacity, instead, MOS
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27c301
Abstract: HM6788P-25 HM6788
Text: • RELIABILITY OF HITACHI 1C MEMORIES 1. S TR U C TU R E IC memories are basically classified into bipolar type and MOS type and utilized effectively by their characteristics. The characteristic of bipolar memories is high speed but small capacity, instead, MOS memories have large capacity.
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