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    HLB12 Search Results

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    HLB12 Price and Stock

    Carlo Gavazzi Holding AG PL22CHLB12

    LED Panel Mount Indicators PLT LIGHT CMPCT HI LENS 12 VAC/DC BLUE LED
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    Mouser Electronics PL22CHLB12
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    Carlo Gavazzi Holding AG PL22SHLB12

    LED Panel Mount Indicators PLT LIGHT HI LENS 12 VAC/DC BLUE LED
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PL22SHLB12
    • 1 -
    • 10 $31.2
    • 100 $28.86
    • 1000 $28.47
    • 10000 $28.47
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    HLB12 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HLB120A Hi-Sincerity Mocroelectronics NPN Triple Diffused Planar Type High Voltage Transistor Original PDF
    HLB120S Hi-Sincerity Mocroelectronics NPN Triple Diffused Planar Type High Voltage Transistors Original PDF
    HLB121 Unisonic Technologies NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR Original PDF
    HLB1211 Hi-Sincerity Mocroelectronics NPN Triple Diffused Planar Type High Voltage Transistors Original PDF
    HLB121A Hi-Sincerity Mocroelectronics NPN Triple Diffused Planar Type High Voltage Transistor Original PDF
    HLB121D Hi-Sincerity Mocroelectronics NPN Triple Diffused Planar Type High Voltage Transistor Original PDF
    HLB121I Hi-Sincerity Mocroelectronics Emitter to base voltage:6V NPN triple diffused planar type high voltage transistor for use in switching applications Original PDF
    HLB121J Hi-Sincerity Mocroelectronics NPN Triple Diffused Planar Type High Voltage Transistor Original PDF
    HLB122 Unisonic Technologies NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR Original PDF
    HLB122D Hi-Sincerity Mocroelectronics NPN Triple Diffused Planar Type High Voltage Transistor Original PDF
    HLB122I Hi-Sincerity Mocroelectronics NPN Triple Diffused Planar Type High Voltage Transistor Original PDF
    HLB122J Hi-Sincerity Mocroelectronics NPN Triple Diffused Planar Type High Voltage Transistor Original PDF
    HLB122T Hi-Sincerity Mocroelectronics NPN Triple Diffused Planar Type High Voltage Transistor Original PDF
    HLB123 Hi-Sincerity Mocroelectronics NPN EPITAXIAL PLANAR TRANSISTOR Original PDF
    HLB1231 Hi-Sincerity Mocroelectronics NPN EPITAXIAL PLANAR TRANSISTOR Original PDF
    HLB123D Hi-Sincerity Mocroelectronics NPN Epitaxial Planar Transistor Original PDF
    HLB123I Hi-Sincerity Mocroelectronics NPN Epitaxial Planar Transistor Original PDF
    HLB123SA Hi-Sincerity Mocroelectronics NPN EPITAXIAL PLANAR TRANSISTOR Original PDF
    HLB123T Hi-Sincerity Mocroelectronics NPN Epitaxial Planar Transistor Original PDF
    HLB124 Hi-Sincerity Mocroelectronics NPN EPITAXIAL PLANAR TRANSISTOR Original PDF

    HLB12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor h2a

    Abstract: HLB121A H2A transistor VCB-55 HA2001
    Text: HI-SINCERITY Spec. No. : HA200112 Issued Date : 2001.04.01 Revised Date : 2005.02.05 Page No. : 1/4 MICROELECTRONICS CORP. HLB121A NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121A is a medium power transistor designed for use in switching


    Original     		PDF HA200112 HLB121A HLB121A 183oC 217oC 260oC transistor h2a H2A transistor VCB-55 HA2001

    HLB122L

    Abstract: HLB122
    Text: UTC HLB122 NPN EPITAXIAL SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC HLB122 is a medium power transistor designed for use in switching applications. FEATURES 1 * High breakdown voltage * Low collector saturation voltage


    Original     		PDF HLB122 HLB122 O-251 HLB122L QW-R213-014 HLB122L

    HLB123

    Abstract: HLB123SA IC DATE CODE ha2006
    Text: HI-SINCERITY Spec. No. : HA200601 Issued Date : 2006.12.01 Revised Date : 2009.04,02 Page No. : 1/5 MICROELECTRONICS CORP. HLB123SA NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


    Original     		PDF HA200601 HLB123SA 217oC 260oC 10sec HLB123 HLB123SA IC DATE CODE ha2006

    HLB123

    Abstract: HLB123SA ha2006 HA-2006
    Text: HI-SINCERITY Spec. No. : HA200601 Issued Date : 2006.12.01 Revised Date : 2006.12.28 Page No. : 1/5 MICROELECTRONICS CORP. HLB123SA NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


    Original     		PDF HA200601 HLB123SA 217oC 260oC 10sec HLB123 HLB123SA ha2006 HA-2006

    HLB121J

    Abstract: VCB-55
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6027 Issued Date : 1996.11.11 Revised Date : 2001.05.01 Page No. : 1/3 HLB121J NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121J is a medium power transistor designed for use in


    Original     		PDF HE6027 HLB121J HLB121J VCB-55

    HLB122J

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2002.05.08 Page No. : 1/4 HLB122J NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122J is a medium power transistor designed for use in


    Original     		PDF HE6830 HLB122J HLB122J O-252

    IC 4047 datasheet

    Abstract: HLB124E
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6727 Issued Date : 1998.07.01 Revised Date : 2002.01.07 Page No. : 1/4 HLB124E NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB124E is designed for high voltage, high speed switching inductive circuits, and amplifier applications.


    Original     		PDF HE6727 HLB124E HLB124E O-220 IC 4047 datasheet

    LB122T

    Abstract: HLB122T to-126 npn switching transistor 400v
    Text: HI-SINCERITY Spec. No. : HT200208 Issued Date : 1998.07.01 Revised Date : 2005.12.02 Page No. : 1/4 MICROELECTRONICS CORP. HLB122T NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122T is a medium power transistor designed for use in switching


    Original     		PDF HT200208 HLB122T HLB122T O-126 183oC 217oC 260oC LB122T to-126 npn switching transistor 400v

    lb 123t

    Abstract: HLB123T 123T LB123T
    Text: HI-SINCERITY Spec. No. : HT200402 Issued Date : 1993.05.15 Revised Date : 2006.02.20 Page No. : 1/4 MICROELECTRONICS CORP. HLB123T NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123T is designed for high voltage. High speed switching inductive circuits


    Original     		PDF HT200402 HLB123T HLB123T O-126 183oC 217oC 260oC 10sec lb 123t 123T LB123T

    HLB121

    Abstract: No abstract text available
    Text: UTC HLB121 NPN EPITAXIAL SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC HLB121 is a medium power transistor designed for use in switching applications. FEATURES 1 * High breakdown voltage * Low collector saturation voltage


    Original     		PDF HLB121 HLB121 O-251 HLB121L QW-R213-015

    HLB123I

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HI200202 Issued Date : 2002.06.01 Revised Date : 2002.06.10 Page No. : 1/4 MICROELECTRONICS CORP. HLB123I NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123I is designed for high voltage. High speed switching inductive circuits and amplifier applications.


    Original     		PDF HI200202 HLB123I HLB123I O-251

    HLB122I

    Abstract: transistor k 2837
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9030 Issued Date : 1998.07.01 Revised Date : 2003.04.16 Page No. : 1/4 HLB122I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122I is a medium power transistor designed for use in switching


    Original     		PDF HE9030 HLB122I HLB122I O-251 transistor k 2837

    HLB125HE

    Abstract: HLB125
    Text: HI-SINCERITY Spec. No. : HE200214 Issued Date : 2002.09.01 Revised Date : 2004.11.08 Page No. : 1/5 MICROELECTRONICS CORP. HLB125HE NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB125HE is designed for lighting applications and low switch-mode power supplies. And it is high voltage capability and high switching speeds.


    Original     		PDF HE200214 HLB125HE HLB125HE O-220 183oC 217oC 260oC HLB125

    HLB122I

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9030 Issued Date : 1998.07.01 Revised Date : 2002.05.08 Page No. : 1/4 HLB122I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122I is a medium power transistor designed for use in switching


    Original     		PDF HE9030 HLB122I HLB122I O-251

    HLB121I

    Abstract: marking code k1 MARK Y1 Transistor transistor mark code H1
    Text: HI-SINCERITY Spec. No. : HE9027 Issued Date : 1996.11.06 Revised Date : 2004.09.24 Page No. : 1/4 MICROELECTRONICS CORP. HLB121I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121I is a medium power transistor designed for use in switching


    Original     		PDF HE9027 HLB121I HLB121I O-251 183oC 217oC 260oC marking code k1 MARK Y1 Transistor transistor mark code H1

    HLB123T

    Abstract: HLB123
    Text: HI-SINCERITY Spec. No. : Preliminary Data Issued Date : 1993.05.15 Revised Date : 2001.02.14 Page No. : 1/3 MICROELECTRONICS CORP. HLB123T NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123T is designed for high voltage. High speed switching inductive


    Original     		PDF HLB123T HLB123T HLB123

    HLB123SA

    Abstract: 2006-1201 IC DATE CODE
    Text: HI-SINCERITY Spec. No. : HA200601 Issued Date : 2006.12.01 Revised Date : 2009.07,02 Page No. : 1/6 MICROELECTRONICS CORP. HLB123SA NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


    Original     		PDF HA200601 HLB123SA 217oC 260oC 10sec HLB123SA 2006-1201 IC DATE CODE

    HLB121D

    Abstract: TO126ML hlb121
    Text: HI-SINCERITY Spec. No. : HD200205 Issued Date : 2002.05.01 Revised Date : 2005.08.16 Page No. : 1/4 MICROELECTRONICS CORP. HLB121D NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121D is a medium power transistor designed for use in switching


    Original     		PDF HD200205 HLB121D HLB121D O-126ML 183oC 217oC 260oC TO126ML hlb121

    HLB123I

    Abstract: IC DATE CODE
    Text: HI-SINCERITY Spec. No. : HI200202 Issued Date : 2002.06.01 Revised Date : 2005.07.13 Page No. : 1/5 MICROELECTRONICS CORP. HLB123I NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123I is designed for high voltage. High speed switching inductive circuits


    Original     		PDF HI200202 HLB123I HLB123I O-251 183oC 217oC 260oC IC DATE CODE

    LB124E

    Abstract: HLB124E IC03 Solder HLB124E Datasheet NPN Transistor 600V TO-220 hlb124eb1
    Text: HI-SINCERITY Spec. No. : HE6727 Issued Date : 1998.07.01 Revised Date : 2004.11.03 Page No. : 1/5 MICROELECTRONICS CORP. HLB124E NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB124E is designed for high voltage, high speed switching inductive circuits,


    Original     		PDF HE6727 HLB124E HLB124E O-220 183oC 217oC 260oC LB124E IC03 Solder HLB124E Datasheet NPN Transistor 600V TO-220 hlb124eb1

    HLB122T

    Abstract: transistor k 2837
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HT200208 Issued Date : 1998.07.01 Revised Date : 2002.05.08 Page No. : 1/3 HLB122T NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122T is a medium power transistor designed for use in switching


    Original     		PDF HT200208 HLB122T HLB122T O-126 transistor k 2837

    HLB121I

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9027-B Issued Date : 1996.11.06 Revised Date : 2000.11.01 Page No. : 1/3 HLB121I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121I is a medium power transistor designed for use in


    Original     		PDF HE9027-B HLB121I HLB121I

    TRANSISTOR 400V 500mA

    Abstract: HLB1245
    Text: HI-SINCERITY Spec. No. : HE200205 Issued Date : 2001.04.01 Revised Date : 2004.11.03 Page No. : 1/4 MICROELECTRONICS CORP. HLB1245 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HLB1245 is designed for high voltage, high speed switching inductive circuits,


    Original     		PDF HE200205 HLB1245 O-220 HLB1245 183oC 217oC 260oC TRANSISTOR 400V 500mA

    transistor b1

    Abstract: hlb124 NPN Transistor 600V 1S1000 utchlb124
    Text: UTC HLB124 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC HLB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. 1 FEATURES * High Speed Switching * Low Saturation Voltage


    Original     		PDF HLB124 HLB124 O-220 HLB124L QW-R203-029 transistor b1 NPN Transistor 600V 1S1000 utchlb124