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    HLB123I

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HI200202 Issued Date : 2002.06.01 Revised Date : 2002.06.10 Page No. : 1/4 MICROELECTRONICS CORP. HLB123I NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123I is designed for high voltage. High speed switching inductive circuits and amplifier applications.


    Original     		PDF HI200202 HLB123I HLB123I O-251

    HLB123I

    Abstract: IC DATE CODE
    Text: HI-SINCERITY Spec. No. : HI200202 Issued Date : 2002.06.01 Revised Date : 2005.07.13 Page No. : 1/5 MICROELECTRONICS CORP. HLB123I NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123I is designed for high voltage. High speed switching inductive circuits


    Original     		PDF HI200202 HLB123I HLB123I O-251 183oC 217oC 260oC IC DATE CODE