HL8333G
Abstract: No abstract text available
Text: HL8333G GaAlAs Laser Diode ODE-208-014 Z Rev.0 May. 2005 Description The HL8333G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It
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HL8333G
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Abstract: No abstract text available
Text: HL8333G ODE2052-00 M Rev.0 Aug. 01, 2008 GaAlAs Laser Diode Description The HL8333G is a high-power 0.8 m band GaAlAs laser diode with a TQW (triple quantum well) structure. It is suitable as a light source for optical disk memories, card readers and various other types of optical equipment.
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HL8333G
HL8333G
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HL8333G
Abstract: No abstract text available
Text: HL8333G ODE-208-014C Z Rev.3 Jun. 13, 2006 GaAlAs Laser Diode Description The HL8333G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. It is suitable as a light source for optical disk memories, card readers and various other types of optical equipment.
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HL8333G
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Abstract: No abstract text available
Text: HL8333G ODE-208-014D Z Rev.4 Feb. 01, 2008 GaAlAs Laser Diode Description The HL8333G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. It is suitable as a light source for optical disk memories, card readers and various other types of optical equipment.
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Abstract: No abstract text available
Text: HL8333G ODE-208-014C Z Rev.3 Jun. 13, 2006 GaAlAs Laser Diode Description The HL8333G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. It is suitable as a light source for optical disk memories, card readers and various other types of optical equipment.
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HL8333G
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LD5033
Abstract: opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G
Text: Optodevices Opnext Lights It Up Opnext is paving the way to a future of exciting laser developments and ground breaking applications. Our industry heritage, future-focused thinking and deep commitment to research and development help us anticipate and meet
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OPD-010908
LD5033
opnext
HL6366DG
opnext l
HL8340MG A
785nm
HL6545MG
660nm 100mw
HL8341MG
HL6313G
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laser diode 940 nM 200mW
Abstract: LD5033 80km* opnext ps7055 LE7062 laser DFB chip 1310nm 2.5G LB7962 10G APD chip HL6530MG Photodiode, 1550nm, butterfly package
Text: opnext 2005 / 2006 HITACHI OPTODEVICES Powered by opnext Powered by HITACHI Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, Opnext offers unique leading-edge optodevices in such areas as fiber optic communications, optical storage, and measuring instruments and encoders. Constant refinement of established technologies offer cutting-edge solutions to a wide variety of needs, providing the power to reshape our world and
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200mW
laser diode 940 nM 200mW
LD5033
80km* opnext
ps7055
LE7062
laser DFB chip 1310nm 2.5G
LB7962
10G APD chip
HL6530MG
Photodiode, 1550nm, butterfly package
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HL6362MG
Abstract: HL6355MG hl6344g HL6366DG HL6750MG HL6545MG HL6348MG opnext l HL6354MG HL8341MG
Text: Oct. 2007 Guide for Red & Infrared Laser Diodes Line up Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and /or invisible to the human eye, they can be quite harmful. In particular, avoid looking directly into a laser diode or collimated
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2008B
D-85622
HL6362MG
HL6355MG
hl6344g
HL6366DG
HL6750MG
HL6545MG
HL6348MG
opnext l
HL6354MG
HL8341MG
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