HL7853MG
Abstract: No abstract text available
Text: HL7853MG GaAlAs Laser Diode Description The HL7853MG is a high power 0.78 µm band GaAlAs laser diode with a multi-quantum well MQW structure. It is suitable as a light source for optical disk memories, and various other types of optical equipment. Features
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HL7853MG
HL7853MG
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HL78
Abstract: No abstract text available
Text: HL7853MG GaAlAs Laser Diode Description The HL7853MG is a high power 0.78 µm band GaAlAs laser diode with a multi-quantum well MQW structure. It is suitable as a light source for optical disk memories, and various other types of optical equipment. Features
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HL7853MG
HL7853MG
HL7853MG:
HL78
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hitachi DC9300
Abstract: 1550nm Laser Diode with butterfly pin package DC9300 1550nm Laser Diode butterfly hitachi HL7851G DR9301 780nm 10mW laser diodes LB7671 RCV5932 laser DFB 1550nm 10mW
Text: C 1998 Dirk Plha HITACHI OPTOELECTRONIC DEVICES HITACHI OPTODEVICES • Industrial and Information Laser Diodes For laser levellers, alignment systems, bar code readers, distance measurement and optical storage, Hitachi offers a complete line-up of 635nm to 830nm laser diodes
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635nm
830nm
HE7601
HE8404
HE8807
HE8811
HE8812
HE7601SG
HE8404SG
hitachi DC9300
1550nm Laser Diode with butterfly pin package
DC9300
1550nm Laser Diode butterfly
hitachi HL7851G
DR9301
780nm 10mW laser diodes
LB7671
RCV5932
laser DFB 1550nm 10mW
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650nm 50mw
Abstract: 780nm 5MW infrared laser diodes photo magneto electric camera hitachi HL6738 laser diode DVD 780nm 10mW laser diodes Hitachi DSAUTAZ005 ld261 PO40
Text: ADE-508-011C Information and Industry Laser Diodes Information and Industry Laser Diodes Application Note Publication Date: 1st Edition, June 1996 4th Edition, February 1999 Published by: Electronic Devices Sales & Marketing Group Semiconductor & Integrated Circuits
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ADE-508-011C
HL8325G
650nm 50mw
780nm 5MW infrared laser diodes
photo magneto electric
camera hitachi
HL6738
laser diode DVD
780nm 10mW laser diodes
Hitachi DSAUTAZ005
ld261
PO40
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RCV5932
Abstract: DR9301 LB7671 laser DFB 1550nm 10mW single hitachi DC9300 Photodiode, 1550nm, butterfly package laser DFB 1550nm 10mW DC9300 Arrayed Waveguide Grating 1550nm Laser Diode with butterfly pin package
Text: C 1998 Dirk Plha HITACHI OPTOELECTRONIC DEVICES HITACHI OPTODEVICES • Industrial and Information Laser Diodes For laser levellers, alignment systems, bar code readers, distance measurement and optical storage DVD-RAM , Hitachi offers a complete line-up of 635nm to 830nm
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635nm
830nm
HE7601
HE8404
HE8807
HE8811
HE8812
HE7601SG
HE8404SG
RCV5932
DR9301
LB7671
laser DFB 1550nm 10mW single
hitachi DC9300
Photodiode, 1550nm, butterfly package
laser DFB 1550nm 10mW
DC9300
Arrayed Waveguide Grating
1550nm Laser Diode with butterfly pin package
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OPR 12 PHOTOCELL
Abstract: photocell opr 12 HL7836MG HE8807CL cake power hitachi HL7851G HL7851 10G APD chip "Hitachi, Ltd., 1997" Hitachi laser diodes IR Pulsed
Text: Hitachi Optodevice Data Book ADE-408-001E Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human eye, they can be quite harmful. In
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ADE-408-001E
HR1201CX
OPR 12 PHOTOCELL
photocell opr 12
HL7836MG
HE8807CL
cake power
hitachi HL7851G
HL7851
10G APD chip
"Hitachi, Ltd., 1997"
Hitachi laser diodes IR Pulsed
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Untitled
Abstract: No abstract text available
Text: HL7853MG GaAIAs Laser Diode HITACHI Description The HL7853MG is a high power 0.78 iin band GaAIAs laser diode with a multi-quantum well (MQW structure. It is suitable as a light source for optical disk memories, and various other types of optical equipment.
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HL7853MG
HL7853MG
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Untitled
Abstract: No abstract text available
Text: HL7853MG GaAIAs Laser Diode Description The HL7853MG is a high power 0.78 |am band GaAIAs laser diode with a multi-quantum well MQW structure. It is suitable as a light source for optical disk memories, and various other types of optical equipment. Features
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HL7853MG
HL7853MG
HL7853MG:
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TM200I
Abstract: No abstract text available
Text: HL7853MG GaAIAs LD Description The HL7853MG is a high power 0.78 pm band GaAIAs laser diode with a multi-quantum well MQW structure. It is suitable as a light source for optical disk memories, and various other types o f optical equip ment. Hermetic sealing o f the package assures high reliability.
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HL7853MG
HL7853MG
HL7853MG:
TM200I
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Untitled
Abstract: No abstract text available
Text: HL7853MG GaAlAs Laser Diode HITACHI Description The HL7853MG is a high power 0.78 pm band GaAlAs laser diode with a multi-quantum well MQW structure. It is suitable as a light source for optical disk memories, and various other types of optical equipment.
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OCR Scan
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HL7853MG
HL7853MG
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PDF
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Untitled
Abstract: No abstract text available
Text: HL7853MG GaAlAs Laser Diode HITACHI Description The HL7853MG is a high power 0.78 |_im band GaAlAs laser diode with a multi-quantum well MQW structure. It is suitable as a light source for optical disk memories, and various other types of optical equipment.
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HL7853MG
HL7853MG
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PDF
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HL7806
Abstract: 6808X L7851 hl7852 HL6411G HL8325G hitachi HL7852 hl7806g HL7851
Text: Product Lineup W avelength Visible and infrared laser diodes 633 nm O ptical output 3 mW Internal circuit Part num ber Main application LD ^P * HL6314M G HL6316G HL6411G* Pointer HL6315G f Pointer HL6312G Bar code reader H L 6313G t Bar code reader HL6720G
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HL6314M
HL6316G
HL6411G*
HL6315G
HL6312G
6313G
HL6720G
HL6724M
HL6712G
HL6722G
HL7806
6808X
L7851
hl7852
HL6411G
HL8325G
hitachi HL7852
hl7806g
HL7851
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L6312G
Abstract: 8325G HL6314M L6313
Text: Contents Product Lineup . Part Num bers.
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HR1103CX.
HR1104CX.
HR1107CR.
HR1201CX.
L6312G
8325G
HL6314M
L6313
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HL7806
Abstract: HE8807CL HL7812G HE8811 HL7812 he130
Text: Package Variations Laser Diodes Packages Open-air type rar Features Applicable Products ’ For experimental use •For module assembly HLP5400, HL1322A, HL1341A, HL1362A, HL1521A, HL1541A, HL1551A ■For module assembly • Chip carrier stem HL1321AC, HL1322AC, HL1341AC,
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HLP5400,
HL1322A,
HL1341A,
HL1362A,
HL1521A,
HL1541A,
HL1551A
HL1321AC,
HL1322AC,
HL1341AC,
HL7806
HE8807CL
HL7812G
HE8811
HL7812
he130
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diode sg 5 ts
Abstract: 7836M
Text: Section 4 Fundamental Characteristics 4.1 LD Fundamental Characteristics L D c h i p is 5 to 10 m m . S ince p h o to v o lta ic sensitivity varies with devices, each photocell must 4.1.1 L igh t vs. C urrent C haracteristics under be calibrated with a standard cell and R2 must be
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2544S
Abstract: HE8807CL HL785
Text: Package Variations Laser diodes Packages Open-air type ^ Features ^ Applicable Products * For experimental use • For module assembly HL1362A, HL1551A • For module assembly HL1362AC, HL1551AC • For module assembly HL1553 • With built-in monitor-photodiode
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HL1362A,
HL1551A
HL1362AC,
HL1551AC
HL6712G,
HL6713G
HL1553
HL6312G,
HL6313G,
HL6714G,
2544S
HE8807CL
HL785
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