HL6340MG
Abstract: HL6341MG
Text: HL6340MG/41MG ODE-208-035A Z Rev.1 Feb. 01, 2008 Circular Beam Low Operating Current Description The HL6340MG/41MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source
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HL6340MG/41MG
ODE-208-035A
HL6340MG/41MG
HL6340MG/41MG:
HL6341MG
HL6340Moduct.
HL6340MG
HL6341MG
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HL6340MG
Abstract: HL6341MG
Text: HL6340MG/41MG ODE-208-035 Z Rev.0 Jul. 01, 2005 Circular Beam Low Operating Current Description The HL6340MG/41MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source
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HL6340MG/41MG
ODE-208-035
HL6340MG/41MG
HL6340MG/41MG:
HL6340MG
HL6340MG
HL6341MG
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Hitachi DSA00280
Abstract: No abstract text available
Text: HL6340MG/41MG Circular Beam Low Operating Current ADE-208-1437B Z Rev.2 Mar. 2002 Description The HL6340MG/41MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These
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HL6340MG/41MG
ADE-208-1437B
HL6340MG/41MG
HL6340MG/41MG:
HL6340MG
Hitachi DSA00280
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HL6312G
Abstract: HL6340MG HL6341MG
Text: HL6340MG/41MG Circular Beam Low Operating Current ODE-208-1437C Z Rev.3 Jan. 2003 Description The HL6340MG/41MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These
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HL6340MG/41MG
ODE-208-1437C
HL6340MG/41MG
HL6340MG/41Mhe
HL6312G
HL6340MG
HL6341MG
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Untitled
Abstract: No abstract text available
Text: HL6340MG/41MG ODE-208-035 Z Rev.0 Jul. 01, 2005 Circular Beam Low Operating Current Description The HL6340MG/41MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source
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HL6340MG/41MG
HL6340MG/41MG
ODE-208-035
HL6340MG/41MG:
HL6340MG
HL6341MG
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HL6312G
Abstract: HL6340MG HL6341MG
Text: HL6340MG/41MG Circular Beam Low Operating Current ODE-208-1437D Z Rev.4 Mar. 2005 Description The HL6340MG/41MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are
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HL6340MG/41MG
ODE-208-1437D
HL6340MG/41MG
HL6340MG/41MG:
HL6312G
HL6340MG
HL6341MG
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Untitled
Abstract: No abstract text available
Text: HL6340MG/41MG ODE2019-00 M Rev.0 Aug. 01, 2008 Circular Beam Low Operating Current Description The HL6340MG/41MG are 0.63 m band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source
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HL6340MG/41MG
HL6340MG/41MG
ODE2019-00
HL6340MG/41MG:
HL6340MG
HL6341MG
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opnext
Abstract: HL1359CP laser diode bare chip 1550 DFB laser bare die HL1357CP HL1511AF HL1513AF laser diode for optical communication Laser Diode 1550 nm dBm dfb 10g
Text: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring
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D-85622
opdb-090103
opnext
HL1359CP
laser diode bare chip 1550
DFB laser bare die
HL1357CP
HL1511AF
HL1513AF
laser diode for optical communication
Laser Diode 1550 nm dBm
dfb 10g
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Maru
Abstract: HL6312G HL6325G HL6335G HL6336G HL6340MG HL6341MG Hitachi DSA0047 Hitachi laser diodes
Text: Hitachi Releases "MARU Beam Series" of Red Laser Diodes Achieving World First of Circular Beam with 1.2 typ. Aspect Ratio in 635 nm Band Wavelength For simpler optical system configuration in laser application products such as laser markers, together
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HL6335G
HL6340MG
Maru
HL6312G
HL6325G
HL6336G
HL6341MG
Hitachi DSA0047
Hitachi laser diodes
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LD5033
Abstract: opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G
Text: Optodevices Opnext Lights It Up Opnext is paving the way to a future of exciting laser developments and ground breaking applications. Our industry heritage, future-focused thinking and deep commitment to research and development help us anticipate and meet
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OPD-010908
LD5033
opnext
HL6366DG
opnext l
HL8340MG A
785nm
HL6545MG
660nm 100mw
HL8341MG
HL6313G
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opnext
Abstract: laser diode DVD 100mw opnext laser diode 660nm 100mw HL6348MG HL1357CP HL1511AF HL1513AF HL6314MG 1310nm fp 10g
Text: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring
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D-85622
opdb-09
opnext
laser diode DVD 100mw
opnext laser diode
660nm 100mw
HL6348MG
HL1357CP
HL1511AF
HL1513AF
HL6314MG
1310nm fp 10g
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laser diode 940 nM 200mW
Abstract: LD5033 80km* opnext ps7055 LE7062 laser DFB chip 1310nm 2.5G LB7962 10G APD chip HL6530MG Photodiode, 1550nm, butterfly package
Text: opnext 2005 / 2006 HITACHI OPTODEVICES Powered by opnext Powered by HITACHI Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, Opnext offers unique leading-edge optodevices in such areas as fiber optic communications, optical storage, and measuring instruments and encoders. Constant refinement of established technologies offer cutting-edge solutions to a wide variety of needs, providing the power to reshape our world and
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200mW
laser diode 940 nM 200mW
LD5033
80km* opnext
ps7055
LE7062
laser DFB chip 1310nm 2.5G
LB7962
10G APD chip
HL6530MG
Photodiode, 1550nm, butterfly package
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HL6362MG
Abstract: HL6355MG hl6344g HL6366DG HL6750MG HL6545MG HL6348MG opnext l HL6354MG HL8341MG
Text: Oct. 2007 Guide for Red & Infrared Laser Diodes Line up Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and /or invisible to the human eye, they can be quite harmful. In particular, avoid looking directly into a laser diode or collimated
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2008B
D-85622
HL6362MG
HL6355MG
hl6344g
HL6366DG
HL6750MG
HL6545MG
HL6348MG
opnext l
HL6354MG
HL8341MG
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dfb activation energy
Abstract: "Hitachi Kodaira Semiconductor" EA-DFB 1455B HF8807 1310nm DFB BH LASER HL6348MG opnext l laser diode DVD 100mw HL6336G
Text: Optodevice Data Book ODE-408-001I Rev.9 Mar. 2003 Opnext Japan, Inc. Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human eye, they can be quite harmful. In particular, avoid looking directly into a
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ODE-408-001I
HL1570AF
HL1569AF
dfb activation energy
"Hitachi Kodaira Semiconductor"
EA-DFB
1455B
HF8807
1310nm DFB BH LASER
HL6348MG
opnext l
laser diode DVD 100mw
HL6336G
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HP6655A
Abstract: LDC-3722B ADE-608-001A laser diode 670nm 40mW HL6720G Hitachi laser diodes TOLD9453MB HL6322G hp laser printer hitachi marking format
Text: Quick Reference Guide for Visible and Infrared Laser Diodes ADE-308-007B Rev.2 Sep. 2001 Hitachi Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human eye, they can be quite
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ADE-308-007B
ADE-408-001H
ADE-608-001A
ADE-508-011E
HP6655A
LDC-3722B
ADE-608-001A
laser diode 670nm 40mW
HL6720G
Hitachi laser diodes
TOLD9453MB
HL6322G
hp laser printer
hitachi marking format
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