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    HL 100 TRANSISTOR Search Results

    HL 100 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    HL 100 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    545 voltsensor

    Abstract: MK379
    Text: Model 545 and 546 Voltsensors Features ! Dual Set-Point High and Low ! Triple Output (Hl, GO, LO) High Level Output (100 mA) ! Versatile Input Amplifier Differential Input Pin-Selectable Ranges High Input Impedance ! Variable Hysteresis ! Latching Capability


    Original     		PDF 15-pin MK378 MK379 MK378 MK379 545 voltsensor

    Calex

    Abstract: 545 546 transistor 546
    Text: Model 545 and 546 Voltsensors Features Dual Set-Point High and Low Triple Output (Hl, GO, LO) High Level Output (100 mA) Versatile Input Amplifier Differential Input Pin-Selectable Ranges High Input Impedance Variable Hysteresis Latching Capability Applications


    Original     		PDF 15-pin MK378 MK379 MK378 MK379 Calex 545 546 transistor 546

    CALEX VOLTSENSOR

    Abstract: TRANSISTOR 545 TRANSISTOR 4841 kit mk 324 545 voltsensor Calex
    Text: Models 545 and 546 Voltsensors Features Description n Dual Set-Point High and Low n Triple Output (Hl, GO, LO) High Level Output (100 mA) n Versatile Input Amplifier Differential Input Pin-Selectable Ranges High Input Impedance The Models 545 and 546 are precision dual set voltage


    Original     		PDF 15-pin MK378 MK379 MK378 MK379 CALEX VOLTSENSOR TRANSISTOR 545 TRANSISTOR 4841 kit mk 324 545 voltsensor Calex

    siemens functional profet

    Abstract: BTS550P BTS 433 profet BTS550P LOGIC CHIP AZ 280 chip HL 100 Transistor Siemens Smart Power IC
    Text: Product Concept for High Current PROFET Full Exploitation of the chip on chip technology • • • The cost performance ratio $/Siemens of base chip as a descrete transistor Control IC enables the smart functions Flexible combination of IC chip and base chip allows the adoption of the


    Original     		PDF

    M57951L

    Abstract: QM50DY DF 1 PC812 HL 100 Transistor HL 44 transistor
    Text: MITSUBISHI HYBRID ICs M57951L HYBRID IC FOR DRIVING TRANSISTOR MODULES OUTLINE DRAWING Dimensions in mm 5.5MAX. M57951L is a Hybrid Integrated Circuit designed for driving Transistor Modules QM30DY, QM50DY, etc., in an Inverter application. This device operates as an isolation amplifier for Transistor Modules due


    Original     		PDF M57951L M57951L QM30DY, QM50DY, 59MAX. 2500Vrms 20MAX. QM50DY DF 1 PC812 HL 100 Transistor HL 44 transistor

    M57955L

    Abstract: QM50DY-H QM50DY-HB "MITSUBISHI HYBRID" HL 44 transistor
    Text: MITSUBISHI HYBRID ICs M57955L HYBRID IC FOR DRIVING HIGH BETA TRANSISTOR MODULES M57955L is a Hybrid Integrated Circuit designed for driving High Beta Transistor Modules QM50DY-HB, etc., in an Inverter application. This device operates as an isolation amplifier Transistor Modules


    Original     		PDF M57955L M57955L QM50DY-HB, 26MAX. 2500Vrms QM50DY-HB QM50DY-H "MITSUBISHI HYBRID" HL 44 transistor

    M57916L

    Abstract: sinewave inverter "MITSUBISHI HYBRID" DF 1 QM10
    Text: MITSUBISHI HYBRID ICs M57916L HYBRID IC FOR DRIVING TRANSISTOR MODULES ● Two independent circuits are included. Isolation voltage: Viso=2500Vrms ● Each circuit can be driven by single power supply 7 ~ 9V Dimensions in mm 21MAX. 59MAX. 1 20 2.54±0.1


    Original     		PDF M57916L 2500Vrms 21MAX. 59MAX. M57916L QM10XX, QM20XX, 4701/2W sinewave inverter "MITSUBISHI HYBRID" DF 1 QM10

    M57917L

    Abstract: sinewave inverter QM50DY "MITSUBISHI HYBRID" QM10
    Text: MITSUBISHI HYBRID ICs M57917L HYBRID IC FOR DRIVING TRANSISTOR MODULES M57917L is a Hybrid Integrated Circuit designed for driving Transistor Modules QM10XX, QM20XX, etc., in an Inverter application. This device operates as an isolation amplifier for Transistor Modules due


    Original     		PDF M57917L M57917L QM10XX, QM20XX, 21MAX. 2500Vrms sinewave inverter QM50DY "MITSUBISHI HYBRID" QM10

    M57915L

    Abstract: "MITSUBISHI HYBRID" M57915L MITSUBISHI HYBRID HYBRID SEMICONDUCTORS sinewave inverter M579 QM10
    Text: MITSUBISHI HYBRID ICs M57915L HYBRID IC FOR DRIVING TRANSISTOR MODULES FEATURES ● Electrical isolation between input and output with integrated optocoupler. Viso=2500Vrms ● Applicable with single power supply 7 ~ 9V ● Applicable with TTL input OUTLINE DRAWING


    Original     		PDF M57915L 2500Vrms 21MAX. M57915L QM10XX, QM20XX, "MITSUBISHI HYBRID" M57915L MITSUBISHI HYBRID HYBRID SEMICONDUCTORS sinewave inverter M579 QM10

    Untitled

    Abstract: No abstract text available
    Text: 4086B INTERNATIONAL, INC CMOS EXPANDABLE 4-WIDE, 2-INPUT AND-OR INVERT GATE FEATURES CONNECTION DIAGRAM • Medium-speed operation — tp HL * 90 ns; tpLH * 140 ns typ. at 10 V - IN H IB IT and ENABLE inputs ■ Buffered outputs ■ 100% tested for quiescent current at 15 V


    OCR Scan     		PDF 4086B 200K12)

    4086B

    Abstract: 15-V 4000B
    Text: 4086B INTERNATIONAL, INC. CMOS EXPANDABLE 4-WIDE, 2-INPUT AND-OR INVERT GATE FEATURES CONNECTION DIAGRAM • Medium-speed operation — tp HL * 90 ns; tpLH * 1^0 ns typ. at 10 V - IN H IB IT and ENABLE inputs ■ Buffered outputs ■ 100% tested for quiescent current at 15 V


    OCR Scan     		PDF 4086B 4086B 200K12) 40S6a 15-V 4000B

    2N4425

    Abstract: GES6220-J1 2N3404 2N3405 GES6220 HS5306
    Text: Sm all signal Transistors TO-92HS Case PD @ TC =25°C =1 0Watt TYPE NO. 2N3402 POLARITY BVc b o BVc e O NPN bveb0 >CBO v CBO <V) (V) (V) <nA) MIN MIN MIN MAX 25 25 5.0 100 hl•E 00 MIN o lC e v CE <mA) (V) MAX NF VCE(SA T ) « ' C c ob <mA) m (MHz) (dB)


    OCR Scan     		PDF O-92HS 2n3402 2n3403 2n3404 2n3405 2n4425 hs3402 hs3403 ges6015-j1 ges6016-j1 GES6220-J1 GES6220 HS5306

    Untitled

    Abstract: No abstract text available
    Text: Small signal Transistors TO-92HS Case Pd @Tq =25°C =1 .OWatt TYPE NO. 2N3402 POLARITY BV c b o BVCEo BVEb o NPN ICBO v CBO (V) (V) (V) <nA) MIN MIN MIN MAX 25 25 5.0 100 e ic hl=E (mA) (V) 25 MIN MAX 75 225 ® VCE (V) VCE(SA T ) ® ' C (V) 4.5 0.3 *T NF


    OCR Scan     		PDF O-92HS 2N3402 2N3403 2N3404 2N3405 GES6218-J1 GES6219-J1 GES6220-J1 GES6221-J1 Q002U27

    HL 06 ic

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5458 TENTATIVE TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5458 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 6.8MAX DC-DC CONVERTER APPLICATIONS A 0.6M AX 5.2 ±0.2 *tf- DC-AC INVERTER APPLICATIONS


    OCR Scan     		PDF 2SC5458 95MAX HL 06 ic

    6DI50MA-050

    Abstract: TFR3M AR4J
    Text: D 6 I 5 M A - 5 5 a : Outline Drawings POWER TRANSISTOR MODULE • 4M : Features • f f i A h FE High D C Current Gain • K S W / f H i g h Speed Sw itching : Applications • if L f f l'O '*— $ General Purpose Inverter • Uninterruptible Power Supply


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1507~RN1509 T O SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1507, RN1508, RN1509 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Unit in mm + 0.2 2 .8 -0 .3 +0.2 1 .5 -0.1 • Including Two Devices in SMV


    OCR Scan     		PDF RN1507 RN1509 RN1507, RN1508, RN2507 E1507 RN1508

    KTA1273

    Abstract: KTC3205 Transistor kta1273 KTA1273 Y *A1273 Transistor
    Text: SEMICONDUCTOR TECHNICAL D A TA KOREA E LE C T R O N IC S CO.,LTD. KTA1273 EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES • Complementary to KTC3205. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage V CBO


    OCR Scan     		PDF KTA1273 KTC3205. T0-92L KTC3205 Transistor kta1273 KTA1273 Y *A1273 Transistor

    Untitled

    Abstract: No abstract text available
    Text: 6DI50M -050 50 a I W f iT f ii : Outline Drawings POWER TRANSISTOR MODULE Features SÄhpE H ig h DC C u rre n t Gain H igh S peed S w itc h in g Iffliü : A pplications i f L f f l'l'v - 'i—$ General P urpose Inverter U n in te rru p tib le P ow er S u p p ly


    OCR Scan     		PDF 6DI50M E82988

    C3656

    Abstract: C4397 transistor c3399 a1678 transistor C4047 A1526 2sc3916 2SA1573 C3396 a1343
    Text: S A if V O Resistance-Contained Transistor Series F eatu re s App l i e ; a t i o n s ☆ Swi tch ing circuit. ☆ Inverter circuit. ☆ Interi ace circuit. ☆ Driver circuit. oto I C-* lOOmA S e r i e s Ta*25"C ( ): Ma rk ing on MCP, CP. For PNP Type No


    OCR Scan     		PDF 2SA1676 /2SC4396 2SA1677 /2SC4397 2SA1678 /2SC4398 2SA1722 /2SC4498 2SA1341 2SA1508 C3656 C4397 transistor c3399 a1678 transistor C4047 A1526 2sc3916 2SA1573 C3396 a1343

    n092

    Abstract: 2SB1097 2SD1588 6111N
    Text: m m p°p m n ' > ' J U > ' < r7 — h 7 > > X ? Silicon P o w e r T ra n s is to r 2SB1097 •; a > h ^ p n f ë J S i J C K -fS iS « <£ X - f y x ^ ^ > ? m iif f i PNP Silicon Epitaxial Transistor Low Frequency Power Amplifier, Low Speed Switching Industrial Use


    OCR Scan     		PDF 2SB1097 2SD1588 Tr-25BC) 0899J45 n092 2SB1097 2SD1588 6111N

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 3SK257 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK257 U nit in mm TV TUNER, VHF RF AM PLIFIER APPLICATIONS FM TUNER APPLICATIONS 2.1 ± 0.1 TV TUNER, UHF RF AM PLIFIER APPLICATIONS • • ,1.25 + 0.1 Superior Cross Modulation Performance.


    OCR Scan     		PDF 3SK257

    Untitled

    Abstract: No abstract text available
    Text: BCW69 BCW70 IL SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistors Marking BCW69 = Hl BCW70 = H2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.6 ^ 0.48 . 1 0.38 0.14 0.09 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR J.02 0.60 0.40


    OCR Scan     		PDF BCW69 BCW70

    optocoupler mitsubishi

    Abstract: No abstract text available
    Text: MITSUBISHI HYBRID ICs M57915L HYBRID IC FOR DRIVING TRANSISTOR MODULES DESCRIPTION M57915L is a Hybrid Integrateci Circuit designed for driving Transis­ OUTLINE DRAWING Dim ensions in mm tor Modules QM1OXX, QM20XX, etc., in an Inverter application.This device operates as an isolation amplifier for Transistor Modules due


    OCR Scan     		PDF M57915L M57915L QM20XX, 2500Vrms optocoupler mitsubishi

    HL 100 Transistor

    Abstract: HL 44 transistor Transistor CL 100 qm50dy mitsubishi power Modules "MITSUBISHI HYBRID" transistor RMD M57951L df transistor Mitsubishi transistor
    Text: MITSUBISHI HYBRID ICs M57951L HYBRID IC FOR DRIVING TRANSISTOR MODULES DESCRIPTION M57951L is a Hybrid Integrated Circuit designed for driving Transis­ OUTLINE DRAWING Dim ensions in mm tor Modules QM30DY, QM50DY, etc., in an Inverter application.This device operates as an isolation amplifier for Transistor Modules due


    OCR Scan     		PDF M57951L M57951L QM30DY, QM50DY, 2500Vrms HL 100 Transistor HL 44 transistor Transistor CL 100 qm50dy mitsubishi power Modules "MITSUBISHI HYBRID" transistor RMD df transistor Mitsubishi transistor