HA17805P
Abstract: hitachi j100 HA17812P J5001 TLG223 r346 rectifier ha17805 nihon cement sg 403 varistor transistor c373
Text: HA16141/42, HA16341/42 PFC and PWM Controller, Redundant Secondary Switching Power Supply Controller Application Note ADE-504-005 Z Rev.0 Apr. 2002 Hitachi Notice When using this document, keep the following in mind: 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
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HA16141/42,
HA16341/42
ADE-504-005
HA17812P
IC307
HA17431UA
HA16341NT
HA16341/42
HA17805P
hitachi j100
J5001
TLG223
r346 rectifier
ha17805
nihon cement
sg 403 varistor
transistor c373
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APC UPS es 500 CIRCUIT DIAGRAM
Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.
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ADE-408
50502C
APC UPS es 500 CIRCUIT DIAGRAM
sk 100 gale 065 tf
2SK1058 MOSFET APPLICATION NOTES
APC UPS CIRCUIT DIAGRAM es 725
General Instrument data book
2SK2264
ESI 252 impedance meter
transistor bf 175
PF0144
2SK212
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2SB367
Abstract: TRANSISTOR 2sb367 2SB368 2SB77 B77A hitachi 2SB77 PNP power transistors by hitachi 2SB368 B 2SB77A 2sb77 d
Text: HITACHI TRANSISTORS — FOR MEDIUM POWER AMPLIFIER USE— The Hitachi 2SB367 and 2SB368 are germanium PNP alloyed junction type transistors, featuring high current transfer ratio which can not be attained by conventional alloyed junction power transistors. The depend
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2SB367
2SB368
150mmx
50mmx50mmxl
TK2395,
TRANSISTOR 2sb367
2SB77
B77A
hitachi 2SB77
PNP power transistors by hitachi
2SB368 B
2SB77A
2sb77 d
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PF0120
Abstract: No abstract text available
Text: HITACHI PF0120 MOS FET Power Amplifier Module for GSM Mobile Phone HITACHI Application For GSM CLASS2 890 to 915 MHz Features • Low power control current: 1 mA Typ • High speed switching: 1.5 flsec Typ • Wide power control range: 90 dB Typ Pin Arrangement
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PF0120
ADE-208-096A
PF0120
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2SJ122
Abstract: 2SK428 t3jh Hitachi Scans-001 vi-73 diode power Voltage73
Text: HITACHI/ÍOPTOELECTRONICSl r 4496205 73 73C HITACHI / COPTOLLbCI HONICS ’ DE § 44 TL.S0 S □DDTTLT ñ 09969 D T-3?-2/ 2SJ122-SILICON P-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair w ith 2SK 428
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44TbS0S
2SK428
O-220AB)
2SJ122
2SK428
t3jh
Hitachi Scans-001
vi-73 diode power
Voltage73
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c2330 equivalent
Abstract: c2330
Text: HITACHI PF0121 MOS FET Power Amplifier Module for GSM Mobile Phone HITACHI Application For GSM C LASS2 890 to 915 M Hz Features • Low power control current: 0.9 m A Typ • High speed switching: 1.5 isec Typ • Wide power control range: 100 dB Typ Pin Arrangement
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PF0121
ADE-208-097A
PFD121
c2330 equivalent
c2330
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PF0030
Abstract: Hitachi PF0030
Text: HITACHI PF0030 Series MOS FET Power Amplifier HITACHI Features • • High stability: Load VSW R = 20 : 1 • • Low power control current: 400 |iA • • Thin package: 5 mmt Ordering Information Type No Operating Frequency Application PF0030 824 to 849 MHz
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PF0030
ADE-208-460
PF0032
F0030
Hitachi PF0030
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mosfet 12w smd
Abstract: 12W SMD MOSFET HITACHI PF0012 PF1002 SMD 12W MOSFET PF0012 Hitachi PF0030 PF0022 pf0030 hitachi PF0010
Text: HITACHI 17 1.8 RF Power Modules These modules offer high efficiency along with excellent immunity to intermodulation distortion and load mismatch. MOSFET technology is well suited to use in the output stage of a cellular radio. Hitachi offers a range of MOSFET Power Amplifiers
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NMT90Q/TACS
PF0010
PF0041
PF0015
PF0015B
PF0017B
PF0055
PF0056
PF0057
mosfet 12w smd
12W SMD MOSFET
HITACHI PF0012
PF1002
SMD 12W MOSFET
PF0012
Hitachi PF0030
PF0022
pf0030 hitachi
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12W 04 SMD MOSFET
Abstract: PF1002 PF0012 mosfet 12w smd PF0022 pf0017b 12W SMD MOSFET PF0027 pf0030 hitachi PF0010
Text: HITACHI 17 1.8 RF Power Modules These modules offer high efficiency along with excellent immunity to intermodulation distortion and load mismatch. MOSFET technology is well suited to use in the output stage of a cellular radio. Hitachi offers a range of MOSFET Power Amplifiers
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NMT90Q/TACS
PF0010
2SJ291
220AB
2SJ192
2SJ293
220FM
2SJ294
2SJ29S
2SJ296
12W 04 SMD MOSFET
PF1002
PF0012
mosfet 12w smd
PF0022
pf0017b
12W SMD MOSFET
PF0027
pf0030 hitachi
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Untitled
Abstract: No abstract text available
Text: HITACHI PF0147 MOS FET Power Amplifier Module for GSM Handy Phone HITACHI ADE-208-322D Z 5th. Edition June, 1996 Application For G SM class4 890 to 915M H z. Features • 2stage am plifier
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PF0147
ADE-208-322D
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bl01rn1-a62-001
Abstract: BL01RN1-A62
Text: HITACHI PF0341A Series MOS FET Power Amplifier Module for UHF Band HITACHI ADE-208-338C Z 4th. Edition July 1996 Features • Small package: 30 x 10 x 5.9 mm • High output power at low voltage: 2 W Typ at 4.8 V • Low power control current: 200 |iA Typ
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PF0341A
ADE-208-338C
PF0342A
PF0343A
PF0344A
PF0345A
BL01RN1-A62-001
bl01rn1-a62-001
BL01RN1-A62
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Untitled
Abstract: No abstract text available
Text: HITACHI PF0348 Series MOS FET Power Amplifier Module for UHF Band HITACHI ADE-208-343C Z 3rd. Edition December, 1996 Features • Small package: 30 x 10 x 5.9mm • Low operation voltage: 7W at 7.2V
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PF0348
ADE-208-343C
200jiA
PF0349
PF0350
PF0351
PF0352
PF0353
360MHz
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Untitled
Abstract: No abstract text available
Text: HITACHI PFIOIOA MOS FET Power Amplifier Module for P/C LAN HITACHI Features • Frequency range: 806 to 824 MHz • Surface mounted small package: 1 cc, 3g with shielded cover • Loe voltage operation: 6 V • Low power control current: 300 |iA Typ Pin Arrangement
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ADE-208-106A
PF1010A
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PF0031
Abstract: hitachi HD PCB
Text: HITACHI PF0031 MOS FET Power Amplifier Module for Mobile Phone HITACHI Application PF0031: For NM T900 890 to 925 MHz Features • High stability: Load VSW R = 20:1 • Low power control current: 400 ¡iA • Thin package: 5 mm t Pin Arrangement ADE-208-461 Z
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PF0031
PF0031:
ADE-208-461
PF0031
hitachi HD PCB
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2SJ122
Abstract: No abstract text available
Text: HITACHI/ÍOPTOELECTRONICSl r 4496205 73 DE § 4 4 TL.S0 S □DDTTLT ñ 73C 0 9 9 6 9 HITACHI / COPTOLLbCI HONICS ’ D T -3 ? -2 / 2SJ122-SILICON P-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair w ith 2SK 428
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2SJ122SILICON
62UbTMHITACHI/
2SJ122
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vapc
Abstract: ADE-208-341C
Text: HITACHI PF0075A MOS FET Power Amplifier Module for AMPS Handy Phone HITACHI ADE-208-341C Z Product preview 4th. Edition July 1996 Features • 2 stage amplifier • High efficiency: 55 % Typ at 1.2 W • Low power control current: 500 |iA • Reflowable surface mounted small package: 0.6 cc
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PF0075A
ADE-208-341C
vapc
ADE-208-341C
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PF0210
Abstract: No abstract text available
Text: HITACHI PF0210 MOS FET Power Amplifier Module for ADC Mobile Phone HITACHI Features • High efficiency: 34% Typ for CW 30% Typ for 7t/4-DQPSK • Low input power: 0 dBm ave. Typ for n /4-DQPSK • Simple bias circuit • High speed switching: 8 |is Typ Pin Arrangement
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PF0210
ADE-208-102E
PF0210_
PF0210
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MOS FET Power Amplifier Module for DCS 1800
Abstract: MAX1785
Text: HITACHI PF0414A MOS FET Power Amplifier Module for DCS 1800 Handy Phone HITACHI ADE-208-431A Z 2nd. Edition October 1996 _ Application For DCS 1800 class 1 1710 to 1785MHz. Features • 3stage amplifier • Small package: 0.2cc • High efficiency: 45% Typ
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PF0414A
1785MHz.
ADE-208-431A
20sec.
MOS FET Power Amplifier Module for DCS 1800
MAX1785
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Untitled
Abstract: No abstract text available
Text: HITACHI PF0415A MOS FET Power Amplifier Module for PCS 1900 Handy Phone HITACHI ADE-208-473A Z 2nd. Edition October 1996 Application For PCS 1900 class 1 1850 to 1910MHz. Features • 3stage amplifier • Small package: 0.2cc • High efficiency: 45% Typ
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PF0415A
ADE-208-473A
1910MHz.
PF0415A
20sec.
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PF0411
Abstract: No abstract text available
Text: HITACHI PF0411 MOS FET Power Amplifier Module for PCS 1900 Handy Phone HITACHI Application For PCS 1900 class 1: 1850 to 1910 MHz Features • Small package: 1 cc, 3g • High efficiency: 32% Typ • High speed switching: 0.9 |isec Pin Arrangement •RF-E
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PF0411
ADE-208-325A
BL01RN1-A62-001
PF0411
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pf0415b
Abstract: No abstract text available
Text: HITACHI PF0415B MOS FET Power Amplifier Module for PCS 1900 Handy Phone HITACHI ADE-208-474B Z 3rd. Edition October 1996 Application For PCS 1900 class 1 1850 to 1910MHz. Features • 3stage amplifier: OdBm input • Small package: 0.2cc • High efficiency: 35% typ. at 1,8W
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PF0415B
ADE-208-474B
1910MHz.
PF0415B
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PF0144
Abstract: PF0144-MOS
Text: HITACHI PF0144 MOS FET Power Amplifier Module for GSM Handy Phone HITACHI ADE-208-463 Z 1st. Edition July 1996 Application For GSM class4 890 to 915 MHz Features • Small package: 1 cc, 3g • High efficiency: 45% Typ • High speed switching: 0.9 ^is Typ
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PF0144
ADE-208-463
BL01RN1-A62-001
PF0144
PF0144-MOS
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PF0148E
Abstract: PF0148 Power Amplifier Module for GSM DE20 hitachi power amplifier
Text: HITACHI PF0148E MOS FET Power Amplifier Module for GSM Handy Phone HITACHI A DE-208-386D Z 5th. Edition June, 1996 Application For GSM class4 890 to 915MHz. Features • • • • • • • • 2stage amplifier Small package: 0.6cc High efficiency: 45% Typ
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PF0148E
DE-208-386D
915MHz.
20sec.
PF0148E
PF0148
Power Amplifier Module for GSM
DE20
hitachi power amplifier
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PF0231A
Abstract: BL01RN1-A62-001
Text: HITACHI PF0231A MOS FET Power Amplifier Module for ADC Handy Phone HITACHI Application For ADC class3 824 to 849 MHz Features • Low voltage operation 4.8 V • High efficiency: 42% Typ for CW 34% Typ for rc/4-DQPSK • Simple Pout control: Controllable by VAPC
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PF0231A
ADE-208-378A
BL01RN1-A62-001
PF0231A
BL01RN1-A62-001
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