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    mosfet 12w smd

    Abstract: 12W SMD MOSFET HITACHI PF0012 PF1002 SMD 12W MOSFET PF0012 Hitachi PF0030 PF0022 pf0030 hitachi PF0010
    Text: HITACHI 17 1.8 RF Power Modules These modules offer high efficiency along with excellent immunity to intermodulation distortion and load mismatch. MOSFET technology is well suited to use in the output stage of a cellular radio. Hitachi offers a range of MOSFET Power Amplifiers


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    PDF NMT90Q/TACS PF0010 PF0041 PF0015 PF0015B PF0017B PF0055 PF0056 PF0057 mosfet 12w smd 12W SMD MOSFET HITACHI PF0012 PF1002 SMD 12W MOSFET PF0012 Hitachi PF0030 PF0022 pf0030 hitachi

    12W 04 SMD MOSFET

    Abstract: PF1002 PF0012 mosfet 12w smd PF0022 pf0017b 12W SMD MOSFET PF0027 pf0030 hitachi PF0010
    Text: HITACHI 17 1.8 RF Power Modules These modules offer high efficiency along with excellent immunity to intermodulation distortion and load mismatch. MOSFET technology is well suited to use in the output stage of a cellular radio. Hitachi offers a range of MOSFET Power Amplifiers


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    PDF NMT90Q/TACS PF0010 2SJ291 220AB 2SJ192 2SJ293 220FM 2SJ294 2SJ29S 2SJ296 12W 04 SMD MOSFET PF1002 PF0012 mosfet 12w smd PF0022 pf0017b 12W SMD MOSFET PF0027 pf0030 hitachi

    2SK1845

    Abstract: 3sk85 2SK408 equivalent 3SK1 3sk156 3sk217 3SK228 3SK103 2sc464 2SC3511
    Text: HITACHI Ultra High Frequency Devices DATA BOOK H IT A C H I ADE-41 CONTENTS • GENERAL INFORMATION. . . . . . 5 Si Bipolar Transistors.


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    PDF ADE-41 D-8013 2SK1845 3sk85 2SK408 equivalent 3SK1 3sk156 3sk217 3SK228 3SK103 2sc464 2SC3511

    Untitled

    Abstract: No abstract text available
    Text: PF0015 -MOS FET Power Amplifier Module for Handy Mobile Phone M O S FET Power Amplifier F O R A M P S 824 ~ 849 MHz O U T L IN E D R A W IN G • FEATURES • Small outline 12 x 45 x 6 .5 mni3 1 Low voltage operation 6 V > Low power control current 300 /¿A


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    PDF PF0015

    Untitled

    Abstract: No abstract text available
    Text: PF0015-MOS FET Power Amplifier Module for Handy Mobile Phone I O U TL IN E DRAW ING MOS FET Power Amplifier FOR AMPS 824 ~ 849 MHz • FEATURES • Sm all outline 12 x 4 5 x 6 .5 m m 3 • Low voltage operation 6 V • Low pow er control current 3 0 0 /iA


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    PDF PF0015---------------------------MOS PF00I5 PF0015 -849M Tc-25Â f-849M

    HITACHI PF0015

    Abstract: G746 PF0015 CO 824 Hitachi Scans-001 shinetu
    Text: PF0015-M OS FET Power A m p lifie r M o du le for Handy M o bile Phone I OUTLINE DRAWING MOS FET Power Amplifier FOR AMPS 824 ~ 849 MHz • FEATURES 1 S m a ll outline 12 x 4 5 x 6 .5 m m 3 1 Low voltage o p e ratio n 6 V 1 Low pow er control curren t 3 0 0 ¡xA


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    PDF PF0015- PF00I5 PF0015 HITACHI PF0015 G746 CO 824 Hitachi Scans-001 shinetu