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    HIGHVOLTAGE OPERATIONAL Search Results

    HIGHVOLTAGE OPERATIONAL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    LM1536H/883 Rochester Electronics LLC Operational Amplifier Visit Rochester Electronics LLC Buy
    HA1-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy
    HA4-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy
    HA1-2542-2 Rochester Electronics LLC High Output Current Operational Amplifier Visit Rochester Electronics LLC Buy

    HIGHVOLTAGE OPERATIONAL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MAX14802/MAX14803/ MAX14803A Low-Charge Injection, 16-Channel, High-Voltage Analog Switches General Description The MAX14802/MAX14803/MAX14803A provide highvoltage switching on 16 channels for ultrasonic imaging and printer applications. The devices utilize HVCMOS


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    PDF MAX14802/MAX14803/ MAX14803A 16-Channel, MAX14802/MAX14803/MAX14803A 16-bit 00V/-100V, 00V/0V, 0V/-160V.

    Untitled

    Abstract: No abstract text available
    Text: MAX14802/MAX14803/ MAX14803A Low-Charge Injection, 16-Channel, High-Voltage Analog Switches General Description The MAX14802/MAX14803/MAX14803A provide highvoltage switching on 16 channels for ultrasonic imaging and printer applications. The devices utilize HVCMOS


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    PDF MAX14802/MAX14803/ MAX14803A 16-Channel, MAX14802/MAX14803/MAX14803A 16-bit 00V/-100V, 00V/0V, 0V/-160V.

    TPS7A3001-EP

    Abstract: No abstract text available
    Text: TPS7A30xx www.ti.com SBVS125B – AUGUST 2010 – REVISED DECEMBER 2013 –36V, –200mA, Ultralow-Noise, Negative Linear Regulator FEATURES DESCRIPTION • • The TPS7A30xx series of devices are negative, highvoltage –36V , ultralow-noise (15.1 VRMS, 72dB


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    PDF TPS7A30xx SBVS125B 200mA, TPS7A30xx 200mA. 20kHz) 100kHz) 120Hz) 700kHz) 200mA TPS7A3001-EP

    Untitled

    Abstract: No abstract text available
    Text: TPS7A49xx www.ti.com SBVS121C – AUGUST 2010 – REVISED DECEMBER 2013 +36V, +150mA, Ultralow-Noise, Positive Linear Regulator FEATURES DESCRIPTION • • The TPS7A49xx series of devices are positive, highvoltage +36V , ultralow noise (15.4 VRMS, 72dB


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    PDF TPS7A49xx SBVS121C 150mA, TPS7A49xx 150mA. 20kHz) 100kHz) 120Hz) 400kHz) 150mA

    D72B

    Abstract: No abstract text available
    Text: LM3533 Complete Lighting Power Solution for Smartphone Handsets General Description Features The LM3533 is a complete power source for backlight, keypad, and indicator LEDs in smartphone handsets. The highvoltage inductive boost converter provides the power for two


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    PDF LM3533 LM3533 D72B

    D72B

    Abstract: C1005X5R1A105 8389S C2012X5R1H105 VLF302512 feed pump automatic change over switch circuit di 2x6 KEYPAD 12 pin LM3533 LM353
    Text: LM3533 Complete Lighting Power Solution for Smartphone Handsets General Description Features The LM3533 is a complete power source for backlight, keypad, and indicator LEDs in smartphone handsets. The highvoltage inductive boost converter provides the power for two


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    PDF LM3533 D72B C1005X5R1A105 8389S C2012X5R1H105 VLF302512 feed pump automatic change over switch circuit di 2x6 KEYPAD 12 pin LM353

    D72B

    Abstract: marking code onsemi smd diode smd diode marking T4 SOD-523
    Text: LM3533 Complete Lighting Power Solution for Smartphone Handsets General Description Features The LM3533 is a complete power source for backlight, keypad, and indicator LEDs in smartphone handsets. The highvoltage inductive boost converter provides the power for two


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    PDF LM3533 LM3533 LM3533. 20-Bump TMD20GAA D72B marking code onsemi smd diode smd diode marking T4 SOD-523

    D72B

    Abstract: 540Hz LM3533TMX feed pump automatic change over switch circuit di 8389S
    Text: LM3533 Complete Lighting Power Solution for Smartphone Handsets General Description Features The LM3533 is a complete power source for backlight, keypad, and indicator LEDs in smartphone handsets. The highvoltage inductive boost converter provides the power for two


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    PDF LM3533 LM3533 D72B 540Hz LM3533TMX feed pump automatic change over switch circuit di 8389S

    46A52

    Abstract: No abstract text available
    Text: 19-0741; Rev 1; 5/09 Single 16-Bit DAC with Current and Voltage Outputs for Industrial Analog Output Modules The MAX5661 single 16-bit DAC with precision highvoltage amplifiers provides a complete solution for programmable current and voltage-output applications.


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    PDF 16-Bit MAX5661 46A52

    CLR15

    Abstract: MAX6126AASA41
    Text: 19-0741; Rev 1; 5/09 Single 16-Bit DAC with Current and Voltage Outputs for Industrial Analog Output Modules The MAX5661 single 16-bit DAC with precision highvoltage amplifiers provides a complete solution for programmable current and voltage-output applications.


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    PDF 16-Bit MAX5661 CLR15 MAX6126AASA41

    AN5296 Application of the CA3018 Integrated

    Abstract: an5296 ca314 DE ca314 application notes AN5296 Application note CA3018 "Application of the CA3018" AN5296 Application of the CA3018 Integrated-Ci CA3183E CA318 CA3083
    Text: [ /Title CA31 46, CA314 6A, CA318 3, CA318 3A /Subject (HighVoltage Transistor Arrays ) /Autho r () /Keywords (Intersil Corporation, five, transistor array, low cost NPN, 40V, 50ma 75ma, mhz ft, high volt- CA3146, CA3146A, CA3183, CA3183A TM Data Sheet April 2000


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    PDF CA314 CA318 CA3146, CA3146A, CA3183, CA3183A CA3183A, AN5296 Application of the CA3018 Integrated an5296 ca314 DE ca314 application notes AN5296 Application note CA3018 "Application of the CA3018" AN5296 Application of the CA3018 Integrated-Ci CA3183E CA318 CA3083

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Data 8 Channel CMOS logic to HighVoltage Level Translator ADG3123 FUNCTIONAL BLOCK DIAGRAM FEATURES VDDL 2.3V to 5.5V input range Output levels of -10V to +30V High Current Carrying Capability: 10mA Continuous Current/channel 20mA Peak Current/channel


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    PDF 200ns 100ns ADG3123 ADG3123 20-LeadThin RU-20 ADG3123BRUZ1 20-Lead RU-20

    *5661GC

    Abstract: 4-20ma spi CLR15 MAX6126AASA41 MAX5661GCB
    Text: 19-0741; Rev 0; 8/08 Single 16-Bit DAC with Current and Voltage Outputs for Industrial Analog Output Modules The MAX5661 single 16-bit DAC with precision highvoltage amplifiers provides a complete solution for programmable current and voltage-output applications.


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    PDF 16-Bit MAX5661 C64-8 MAX5661 *5661GC 4-20ma spi CLR15 MAX6126AASA41 MAX5661GCB

    ATC100B101JW500X

    Abstract: ATC100B1R0BW500X C1206104K5RAC GRM43-2X7R10 AGRA10GM JESD22-C101A c.d.m. technology avx 2743019446 AVX Manufacture Label MA4853
    Text: Preliminary Data Sheet September 2004 AGRA10GM Plastic Overmold 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Device Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS plastic overmold RF power


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    PDF AGRA10GM AGRA10 IS-95 pro9138 DS04-293RFPP DS04-257RFPP) ATC100B101JW500X ATC100B1R0BW500X C1206104K5RAC GRM43-2X7R10 JESD22-C101A c.d.m. technology avx 2743019446 AVX Manufacture Label MA4853

    AGRA10E

    Abstract: AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors
    Text: Preliminary Data Sheet January 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable


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    PDF AGRA10E AGRA10E IS-95 C32/F, DS03-161RFPP DS03-038RFPP) AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors

    MAX1848

    Abstract: MAX1848EKA
    Text: 19-2028; Rev 0; 5/01 White LED Step-Up Converter in SOT23 Features ♦ Constant Current Regulation for Uniform Illumination This step-up PWM converter includes an internal, highvoltage, low RDSON N-channel MOSFET switch for high efficiency and maximum battery life. A single analog


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    PDF MAX1848 MAX1848 MAX1848EKA

    aaim

    Abstract: MAX1848 MAX1848EKA MAX1848ETA MAX1848EK
    Text: 19-2028; Rev 1; 9/02 White LED Step-Up Converter in SOT23 Features ♦ Constant Current Regulation for Uniform Illumination This step-up PWM converter includes an internal, highvoltage, low RDSON N-channel MOSFET switch for high efficiency and maximum battery life. A single analog


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    PDF MAX1848 MAX1848 aaim MAX1848EKA MAX1848ETA MAX1848EK

    Untitled

    Abstract: No abstract text available
    Text: DS3922 High-Speed Current Mirror and Integrated FETs for DC-DC Controller General Description The DS3922 high-speed current mirror integrates highvoltage devices necessary for monitoring the burst mode receive power signal in avalanche photodiode APD biasing and OLT applications. The device has two small and


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    PDF DS3922 DS3922

    Untitled

    Abstract: No abstract text available
    Text: MULTI-OUTPUT HIGH-VOLTAGE MODULES 39 TRI PLE OUTPUT AUX SERI ES High Voltage Biasing Supply The AUX Series accessory provides second and third adjustable positive HV outputs in addition to the adjustable main positive highvoltage power supply output. The AUX outputs are set for a specific


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    PDF 0A-35A 15AUX4-F1200-G450-C

    MAX1848

    Abstract: MAX1848EKA MAX1848EV
    Text: 19-2028; Rev 0; 5/01 White LED Step-Up Converter in SOT23 Features ♦ Constant Current Regulation for Uniform Illumination This step-up PWM converter includes an internal, highvoltage, low RDSON N-channel MOSFET switch for high efficiency and maximum battery life. A single analog


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    PDF MAX1848 MAX1848 MAX1848EKA MAX1848EV

    MOSFET J162

    Abstract: j162 MOSFET J147
    Text: Preliminary Data Sheet August 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz


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    PDF AGRA10XM AGRA10 IS-95 DS04-202RFPP DS04-139RFPP) MOSFET J162 j162 MOSFET J147

    AGRB10XM

    Abstract: JESD22-C101A DSA00206784.txt
    Text: Data Sheet April 2004 AGRB10XM 10 W, 1.0 GHz to 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRB10 is a broadband, general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 1.0 GHz to 2.7 GHz operation.


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    PDF AGRB10XM AGRB10 DS04-140RFPP PB04-052RFPP) AGRB10XM JESD22-C101A DSA00206784.txt

    M9108

    Abstract: IH9108 IH9108IDN IH9108MDN
    Text: Intersil Hlgh-Rellabllity Products IH9108 High Reliability 8-Channel HighVoltage Multiplexer with Latches GENERAL DESCRIPTION FEATURES The IH9108 is an 8-channel multiplexer with latches de­ signed for high voltage ± 50V applications in microproces­


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    PDF IH9108 IH9108 5V-60V M9108 IH9108IDN IH9108MDN

    Untitled

    Abstract: No abstract text available
    Text: ¡2 h a r r C A 3140A CA3140 i s BiMOS Operational Amplifiers with MOSFET Input/Bipolar Output August 1 9 9 1 Features D escription • MOSFET Input Stage The CA3140A and CA3140 are integrated-circuit operational amplifiers that combine the advantages of highvoltage PMOS transistors with high-voltage bipolar


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    PDF CA3140 CA3140A CA3140 CA3130