HIGH-VOLTAGE BIPOLAR TRANSISTOR Search Results

HIGH-VOLTAGE BIPOLAR TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
TLP5702H	Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L
TLP5705H	Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L
GT30J110SRA	Toshiba Electronic Devices & Storage Corporation	IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N)

HIGH-VOLTAGE BIPOLAR TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
cfl low loss drive Abstract: phe13009 transistor BUJ100 DIMMER BUJ100 PHE13007 high power bipolar transistor selection Electronic ignitors for HID lamp circuits High power planar Transformer transistor BUT Text: NXP high voltage power bipolar transistors BUJ & PHx series High voltage power bipolar transistors for lighting Our high voltage power bipolar transistors are part of our industry-leading portfolio for energy-efficient lighting. Designed to support electronic ballast and transformer	Original	vol92 OT186A O220AB OT428) cfl low loss drive phe13009 transistor BUJ100 DIMMER BUJ100 PHE13007 high power bipolar transistor selection Electronic ignitors for HID lamp circuits High power planar Transformer transistor BUT	PDF
transistor zo 107 Abstract: AT-32063 AT-32063-BLK AT-32063-TR1 4046 IC d 1879 sc 107 transistor Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package.	Original	AT-32063 AT-32063 OT-363 OT-363 SC-70) transistor zo 107 AT-32063-BLK AT-32063-TR1 4046 IC d 1879 sc 107 transistor	PDF
8 pin ic 3844 for 5 volts Abstract: AT-32063 AT-32063-BLK AT-32063-TR1 transistor zo 107 Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package.	Original	AT-32063 AT-32063 OT-363 OT-363 SC-70) 5965-1234E 5965-8921E 8 pin ic 3844 for 5 volts AT-32063-BLK AT-32063-TR1 transistor zo 107	PDF
MTP8P10 Abstract: MUR105 BUD43D2 MJE210 MPF930 MTP12N10 Text: BUD43D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUD43D2 is a state–of–the–art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally	Original	BUD43D2 BUD43D2 BUD43D2: r14525 BUD43D2/D MTP8P10 MUR105 MJE210 MPF930 MTP12N10	PDF
CA3140 Abstract: IC CA3140 DATA SHEET CA3019 ca3109 baxandall CA3140S ca3140 application circuit 50hz wien oscillator IC CA3140 CA3140A Text: CA3140, CA3140A Data Sheet November 2002 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output The CA3140A and CA3140 are integrated circuit operational amplifiers that combine the advantages of high voltage PMOS transistors with high voltage bipolar transistors on a	Original	CA3140, CA3140A CA3140A CA3140 IC CA3140 DATA SHEET CA3019 ca3109 baxandall CA3140S ca3140 application circuit 50hz wien oscillator IC CA3140	PDF
pin diagram of IC ca3130 Abstract: CA3140 PIN DIAGRAM OF IC CA3140 CA3140S ca3140 equivalent ca3109 CA3019 ca3109 diode array ca3140 equivalents tone control circuit Text: CA3140, CA3140A Data Sheet September 1998 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output The CA3140A and CA3140 are integrated circuit operational amplifiers that combine the advantages of high voltage PMOS transistors with high voltage bipolar transistors on a single	Original	CA3140, CA3140A CA3140A CA3140 pin diagram of IC ca3130 PIN DIAGRAM OF IC CA3140 CA3140S ca3140 equivalent ca3109 CA3019 ca3109 diode array ca3140 equivalents tone control circuit	PDF
CA3140T Abstract: PIN DIAGRAM OF IC CA3140 ca3140 AN6668 ca3140 application circuit CA3140S ca3109 diode array baxandall ca 3080a 50hz wien oscillator Text: CA3140, CA3140A Data Sheet March 2002 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output The CA3140A and CA3140 are integrated circuit operational amplifiers that combine the advantages of high voltage PMOS transistors with high voltage bipolar transistors on a single	Original	CA3140, CA3140A CA3140A CA3140 CA3140T PIN DIAGRAM OF IC CA3140 AN6668 ca3140 application circuit CA3140S ca3109 diode array baxandall ca 3080a 50hz wien oscillator	PDF
Semefab Scotland Abstract: semefab Text: PPS 159 High Voltage Bipolar Process Preview Datasheet Rev 1.0 June 2000 DESCRIPTION FEATURES The PPS 159 is an industry standard, very robust, junction isolated, bipolar process. It features vertical NPN and lateral PNP Bipolar transistors, implanted resistors and	Original		PDF
Untitled Abstract: No abstract text available Text: S-5741 Series www.sii-ic.com HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.0_00 Seiko Instruments Inc., 2014 The S-5741 Series, developed by CMOS technology, is a bipolar Hall effect latch with high-withstand voltage, high-speed detection and high-accuracy magnetic characteristics.	Original	S-5741 OT-23-3	PDF
D42DG Abstract: BUD43D transistor 369D BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic	Original	BUD42D BUD42D BUD42D/D D42DG BUD43D transistor 369D BUD42DT4 MPF930 MTP8P10 MUR105	PDF
369D Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic	Original	BUD42D BUD42D BUD42D/D 369D BUD42DT4 MPF930 MTP8P10 MUR105	PDF
369D Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic	Original	BUD42D BUD42D BUD42D/D 369D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG	PDF
BUD43D transistor Abstract: 369D BUD42D BUD42DT4 MPF930 MTP8P10 d-pak DEVICE MARKING CODE table BUD43 Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally suitable	Original	BUD42D BUD42D BUD42D-1: BUD42D/D BUD43D transistor 369D BUD42DT4 MPF930 MTP8P10 d-pak DEVICE MARKING CODE table BUD43	PDF
GT30J124 Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123 Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.	Original	BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123	PDF

AT-310 Abstract: AT-31011 AT-31011-BLK AT-31011-TR1 AT-31033 AT-31033-BLK AT-31033-TR1 AT31033 5965-8919E Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-31011: 0.9 dB NF, 13 dB GA	Original	AT-31011 AT-31033 AT-31011: AT-31033: OT-143 AT-31011 AT-31033 OT-23, AT-310 AT-31011-BLK AT-31011-TR1 AT-31033-BLK AT-31033-TR1 AT31033 5965-8919E	PDF
AT-320 Abstract: AT-32011 AT-32011-BLK AT-32011-TR1 AT-32033 AT-32033-BLK AT-32033-TR1 sot-23 marking code 352 Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-32011: 1 dB NF, 14 dB GA	Original	AT-32011 AT-32033 AT-32011: AT-32033: OT-23 OT-143 AT-32011 AT-32033 OT-23, AT-320 AT-32011-BLK AT-32011-TR1 AT-32033-BLK AT-32033-TR1 sot-23 marking code 352	PDF
npn transistor 400 volts.10 amperes Abstract: BUL 380 Text: BUL42D High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUL42D is a state−of−the−art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally suitable	Original	BUL42D npn transistor 400 volts.10 amperes BUL 380	PDF
sot-23 marking code 352 Abstract: AT-30511 AT-30511-BLK AT-30511-TR1 AT-30533 AT-30533-BLK AT-30533-TR1 AT-310 AT30533 Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-30511: 1.1 dB NF, 16 dB GA	Original	AT-30511 AT-30533 AT-30511: AT-30533: OT-23 OT-143 AT-30511 AT-30533 OT-23, sot-23 marking code 352 AT-30511-BLK AT-30511-TR1 AT-30533-BLK AT-30533-TR1 AT-310 AT30533	PDF
BUL 380 Abstract: BUL42D MTP8P10 MUR105 MJE210 MPF930 MTP12N10 Text: BUL42D High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUL42D is a state−of−the−art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally suitable	Original	BUL42D BUL42D r14525 BUL42D/D BUL 380 MTP8P10 MUR105 MJE210 MPF930 MTP12N10	PDF
AT-30533-TR1 Abstract: AT-310 AT-30511 AT-30511-BLK AT-30511-TR1 AT-30533 AT-30533-BLK Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-30511: 1.1 dB NF, 16 dB GA	Original	AT-30511 AT-30533 AT-30511: AT-30533: OT-23 OT-143 AT-30511 AT-30533 OT-23, AT-30533-TR1 AT-310 AT-30511-BLK AT-30511-TR1 AT-30533-BLK	PDF
CA3080T Abstract: ed 3b diod a 3140 12 diod full wave bridge rectifier ic BA 10B FULL WAVE RECTIFIER a3140 CA3130 ica ca3130 ca 3140a a3140 equivalent Text: CA3140, CA3140A Semiconductor September 1998 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output The CA3140A and CA3140 are integrated circuit operational am plifiers that com bine the advantages of high voltage PM O S transistors with high voltage bipolar transistors on a single	OCR Scan	CA3140, CA3140A CA3140A CA3140 CA3080T ed 3b diod a 3140 12 diod full wave bridge rectifier ic BA 10B FULL WAVE RECTIFIER a3140 CA3130 ica ca3130 ca 3140a a3140 equivalent	PDF
Untitled Abstract: No abstract text available Text: Who HEW LAR ETDT mL'fiIM PACK Low Current, High Perform ance NPN Silicon Bipolar Transistor Technical Data AT-32063 F eatures Description • High Perform ance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains tw o high	OCR Scan	AT-32063 OT-363 AT-32063 OT-363 5965-1234E 5965-8921E 4447SA4	PDF
at30b Abstract: AT-80B11 AT-30611 sj 2252 ic AT-30S33 transistor SJ 2518 AT-80533 Text: warn HEWLETT ASEI PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30633 F eatu res D escription * High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation * Amplifier Tested 900 MHz	OCR Scan	AT-30511 AT-30633 AT-30533 OT-23 OT-143 OT-23, at30b AT-80B11 AT-30611 sj 2252 ic AT-30S33 transistor SJ 2518 AT-80533	PDF
sot303 Abstract: No abstract text available Text: Wfiït mitÍM HP AECWKLAERTDT Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • Amplifier Tested 900 MHz Performance: 1.3 dB NF,	OCR Scan	AT-32063 OT-363 vailable111 OT-363 5665-1234E sot303	PDF

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HIGH-VOLTAGE BIPOLAR TRANSISTOR Search Results

HIGH-VOLTAGE BIPOLAR TRANSISTOR Result Highlights (5)

HIGH-VOLTAGE BIPOLAR TRANSISTOR Datasheets Context Search

cfl low loss drive

transistor zo 107

8 pin ic 3844 for 5 volts

MTP8P10

CA3140

pin diagram of IC ca3130

CA3140T

Semefab Scotland

Untitled

D42DG

369D

369D

BUD43D transistor

GT30J124

AT-310

AT-320

npn transistor 400 volts.10 amperes

sot-23 marking code 352

BUL 380

AT-30533-TR1

CA3080T

Untitled

at30b

sot303