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    HIGH-SPEED OPTOELECTRONICS Search Results

    HIGH-SPEED OPTOELECTRONICS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP2304 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), High-speed / IPM driver, 1 Mbps, 3750 Vrms, 5pin SO6 Visit Toshiba Electronic Devices & Storage Corporation
    TLP2766A Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), High-speed, 20 Mbps, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    HIGH-SPEED OPTOELECTRONICS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GAP100

    Abstract: GAP300 Germanium Power Diodes GAP75 GAP60CS GAP60 10E-15 Germanium power Photodiodes Germanium PIN TO46
    Text: GAP60 GAP60CS GAP75 GAP100 GAP300 GPD OPTOELECTRONICS CORP. High Speed InGaAs Photodiodes • High Responsivity • High Shunt Resistance • Low Capacitance: High Speed • Planar Design for High Reliability GPD Optoelectronics Corp. GAP60 GAP60CS GAP75 GAP100 GAP300


    Original     		PDF GAP60 GAP60CS GAP75 GAP100 GAP300 GAP300 Germanium Power Diodes GAP75 10E-15 Germanium power Photodiodes Germanium PIN TO46

    VOW2201

    Abstract: HCPL-2211 sop5 package
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOCOUPLERS Optoelectronics - High Speed Optocouplers in Multiple Packages High Speed High-Speed Optocouplers FEATURES APPLICATIONS • JEDEC-compatible • Industrial communication buses • Reinforced insulation


    Original     		PDF RES4-9337-2726 VMN-SG2129-1403 VOW2201 HCPL-2211 sop5 package

    vishay 6N136

    Abstract: TLP2630 application not tlp559 AVAGO 2200 A 2630 DIP8 PC9D10 mosFET K 2611 A 4503 A 4503 ic K6N135
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . Optoelectronics - High Speed Optocouplers in Multiple Packages AND TEC I INNOVAT O L OGY High Speed N HN OPTOCOUPLERS O 19 62-2012 High-Speed Optocouplers FEATURES APPLICATIONS • JEDEC-compatible • Industrial communication buses


    Original     		PDF VMN-SG2129-1205 vishay 6N136 TLP2630 application not tlp559 AVAGO 2200 A 2630 DIP8 PC9D10 mosFET K 2611 A 4503 A 4503 ic K6N135

    LM6629

    Abstract: No abstract text available
    Text: LMH6629 LMH6629 Ultra-Low Noise, High-Speed Operational Amplifier with Shutdown Literature Number: SNOSB18E LMH6629 Ultra-Low Noise, High-Speed Operational Amplifier with Shutdown General Description Features The LMH6629 is a high-speed, ultra low-noise amplifier designed for applications requiring wide bandwidth with high


    Original     		PDF LMH6629 LMH6629 SNOSB18E LM6629

    diode 1n4009

    Abstract: 1N4009
    Text: 1N4009 Ultra high speed diode. Working inverse voltage 25 V. 3.72 Diodes High-Speed/. Page 1 of 1 Enter Your Part # Home Part Number: 1N4009 Online Store 1N4009 Diodes Ultra high speed diode. Working inverse voltage 25 V. Transistors Integrated Circuits


    Original     		PDF 1N4009 1N4009 DO-35 com/1n4009 diode 1n4009

    vhc04

    Abstract: 74HC04 74VHC04 74VHC04M 74VHC04MTC 74VHC04N 74VHC04SJ M14A M14D MTC14
    Text: 74VHC04 Hex Inverter Features General Description • High Speed: tPD = 3.8ns typ. at VCC = 5V ■ High noise immunity: VNIH = VNIL = 28% VCC (min.) The VHC04 is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent


    Original     		PDF 74VHC04 VHC04 74HC04 74VHC04 74HC04 74VHC04M 74VHC04MTC 74VHC04N 74VHC04SJ M14A M14D MTC14

    Untitled

    Abstract: No abstract text available
    Text: 74VHCT04A Hex Inverter Features General Description • High speed: tPD = 4.7ns Typ. at TA = 25°C ■ High noise immunity: VIH = 2.0V, VIL = 0.8V The VHCT04A is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent


    Original     		PDF 74VHCT04A VHCT04A 74HCT04 74VHCT04A

    74VHCT04AM

    Abstract: 74VHCT04AMTC 74VHCT04AMTCX 74VHCT04AMX 74VHCT04ASJ M14A M14D VHCT04A 74HCT04 74VHCT04A
    Text: 74VHCT04A Hex Inverter tm Features General Description • High speed: tPD = 4.7ns Typ. at TA = 25°C ■ High noise immunity: VIH = 2.0V, VIL = 0.8V The VHCT04A is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent


    Original     		PDF 74VHCT04A VHCT04A 74HCT04 74VHCT04A 74VHCT04AM 74VHCT04AMTC 74VHCT04AMTCX 74VHCT04AMX 74VHCT04ASJ M14A M14D 74HCT04

    GAP300

    Abstract: 10E-15 GPD optoelectronics GAP100
    Text: GPD GAP60 GAP60CS GAP75 GAP100 GAP300 High Speed InGaAs Photodiodes High Responsivity High Shunt Resistance Low Capacitance: High Speed Planar Design for High Reliability GPD Optoelectronics Corp. GPDOS00002 GAP60 GAP60CS GAP75 GAP100 GAP300 E sWBfl GAP60/CS


    OCR Scan     		PDF GAP60 GAP60CS GAP75 GAP100 GAP300 GPDOS00002 GAP60/CS 850nm 1300nm 1550nm GAP300 10E-15 GPD optoelectronics

    2SK221

    Abstract: DIODE T25 4 io 2SK220 H241 HITACHI 2SK* TO-3
    Text: 44TbBD5 001301Ö Ibb • HIT4 blE D 2SK220H, 2SK2 21H HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING , HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • High Speed Switching. • High Cutoff Frequency. • Enhancement-Mode. •


    OCR Scan     		PDF 44TbBD5 2SK220Â 2SK221Â 2SK221 DIODE T25 4 io 2SK220 H241 HITACHI 2SK* TO-3

    2SK298

    Abstract: 2SK299 J-10 diode vu J10 DIODE HITACHI 2SK* TO-3
    Text: IHIT4 4MTb205 G013024 4bT blE D 2SK298,2SK299 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING , HIGH FREQUENCY POWER AMPLIFIER • FEATURES • Low On-Resistance. • High Speed Switching. • High Cutoff Frequency. • No Secondary Breakdown.


    OCR Scan     		PDF G013024 2SK298 2SK299 2SK299 J-10 diode vu J10 DIODE HITACHI 2SK* TO-3

    2SK221

    Abstract: 2SK220 H241 HITACHI 2SK* TO-3
    Text: 44TbBD5 001301Ö Ibb • HIT4 blE D 2SK220H, 2SK2 21H HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL M O S FET HIGH SPEED POWER SW ITCHING , HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • High Speed Switching. • High Cutoff Frequency. • Enhancement-Mode.


    OCR Scan     		PDF 44TbBD5 2SK220Â 2SK221Â 2SK221 2SK220 H241 HITACHI 2SK* TO-3

    2sk298

    Abstract: 2SK299 3tb 40 Hitachi Scans-001
    Text: 44<ib205 G013024 blE D IHIT4 4bT 2SK298,2SK299 HITACHI/C OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING , HIGH FREQUENCY POWER AMPLIFIER • FEATURES • Low On-Resistance. • High Speed Switching. • High Cutoff Frequency. • No Secondary Breakdown.


    OCR Scan     		PDF G013024 2SK298 2SK299 2SK299 3tb 40 Hitachi Scans-001

    2SK299

    Abstract: 2SK298 HITACHI 2SK* TO-3
    Text: 44Tb2G5 G013G24 4bT • H I T 4 blE D 2SK298,2SK299 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING. HIGH FREQU EN CY POWER AMPLIFIER ■ FEATURES • Low On-Resistance. • High Speed Switching. • High Cutoff Frequency. •


    OCR Scan     		PDF 2SK298 2SK299 44Tb2G5 G013G24 DD13QEb 2SK299 HITACHI 2SK* TO-3

    Untitled

    Abstract: No abstract text available
    Text: TIED56 Avalanche Photodiode Texas Optoelectronics, Inc. OPTIMIZED FOR HIGH-SPEED DETECTION OF NEAR-INFRARED RADIANT ENERGY DESCRIPTION FEATURES The TIED56 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the


    OCR Scan     		PDF TIED56 TIED56 Equi1218) 9L53PL375) 5J7I023S

    Untitled

    Abstract: No abstract text available
    Text: TIED56 Avalanche Photodiode Texas Optoelectronics, Inc. OPTIMIZED FOR HIGH-SPEED DETECTION OF NEAR-INFRARED RADIANT ENERGY DESCRIPTION FEATURES The TIED56 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the


    OCR Scan     		PDF TIED56

    Untitled

    Abstract: No abstract text available
    Text: TIED59 Avalanche Photodiode Texas Optoelectronics, Inc. OPTIMIZED FOR HIGH-SPEED DETECTION OF NEAR-INFRARED RADIANT ENERGY DESCRIPTION FEATURES The TIED59 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the


    OCR Scan     		PDF TIED59 TIED59 TIED56 000D524

    Untitled

    Abstract: No abstract text available
    Text: TIED56 Avalanche Photodiode Taxas Optoelectronics, Inc. OPTIMIZED FOR HIGH-SPEED DETECTION OF NEAR-INFRARED RADIANT ENERGY DESCRIPTION FEATURES The TIED56 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the


    OCR Scan     		PDF TIED56 TIED56 000D524 IH375)

    2SK351

    Abstract: Hitachi Scans-001 HITACHI 2SK* TO-3
    Text: HH'ìbSGi G013D37 016 • H I T 4 2SK351 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET blE » II«. |i i t »j (3A]f) HIGH SPEED POWER SWITCHING. HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • High Speed Switching. •


    OCR Scan     		PDF G013D37 2SK351 Hitachi Scans-001 HITACHI 2SK* TO-3

    2SK260

    Abstract: 2SK259 t7y25 HITACHI 2SK* TO-3
    Text: blE D MM'JbHQS 0013Ü22 bT? • H I T M HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING . HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • High Speed Switching. • High Cutoff Frequency. • High Breakdown Voltage. • Suitable for Switching Regulator, DC-DC Con­


    OCR Scan     		PDF 2SK259Â 2SK260Â 2SK260 2SK259 t7y25 HITACHI 2SK* TO-3

    2SK399

    Abstract: 2SJ113 44TB2 diode lo2a GG13 J-10 Hitachi Scans-001
    Text: MMTbEGS GOlBGHfc, Q5G • H I T M 2SK399 HITACHI/ OPTOELECTRONICS b lE ]) SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ113 I N ■ FEATURES • Low On-Resistance. • High Speed Switching.


    OCR Scan     		PDF 2SJ113 2SK399 2SJ113 44TB2 diode lo2a GG13 J-10 Hitachi Scans-001

    2SK351

    Abstract: HITACHI 2SK* TO-3
    Text: HH'ìbSGi G013D37 016 • H I T 4 2SK351 H IT AC HI / OPTOELECTRONICS SILICON N-CHANNEL MOS FET blE » II« . |i i t »j (3A]f) HIGH SPEED POWER SWITCHING. HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • High Speed Switching.


    OCR Scan     		PDF g013d37 2SK351 HITACHI 2SK* TO-3

    sj56

    Abstract: No abstract text available
    Text: MMTbSDS OÜIETG! 103 • H I T H blE D HITACHI/ OPTOELECTRONICS SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • High Speed Switching. • High Cutoff Frequency. (/c= 1M Hz) • Enhancement-Mode. • Suitable for Sw itching Regulator,


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED AIGaAS SCHMITT TRIGGER OPTOCOUPLERS OPTOELECTRONICS H11N1 H11N2 H11N3 PACKAGE DIMENSIONS DESCRIPTION The H11N series has a medium-to-high speed integrated circuit detector optically coupled to a gallium-aluminumarsenide infrared emitting diode. The output incorporates


    OCR Scan     		PDF H11N1 H11N2 H11N3 ST1603 ST2028 ST2029 ST2030 ST2032