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    HIGH-SPEED ACCESS TIME Search Results

    HIGH-SPEED ACCESS TIME Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP2304 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), High-speed / IPM driver, 1 Mbps, 3750 Vrms, 5pin SO6 Visit Toshiba Electronic Devices & Storage Corporation
    TLP2766A Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), High-speed, 20 Mbps, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    HIGH-SPEED ACCESS TIME Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MSA1020

    Abstract: sc 6700 Mitsubishi flash
    Text: L-61103-0A MITSUBISHI ELECTRIC REV Features of Mitsubishi MCP Loaded DINOR Flash 1/2 16Mb -> 32Mb -> 64Mb 2. High Speed Access Time DINOR realizes high speed random access at low voltage. 3. High Speed Erase Fastest Erase Time of all Flash Memories (40ms/Block;Typical)


    Original     		PDF L-61103-0A 40ms/Block 14mm2 11mm2 L-61104-0A MSA1020 sc 6700 Mitsubishi flash

    P4C174

    Abstract: No abstract text available
    Text: P4C174 P4C174 HIGH SPEED 8K x 8 CACHE TAG STATIC RAM FEATURES High Speed Address-To-Match - 8 ns Maximum Access Time Data Retention at 2V for Battery Backup Operation Advanced CMOS Technology High-Speed Read-Access Time Low Power Operation — Active: 750 mW Typical at 25 ns


    Original     		PDF P4C174 13-line P4C174 -10PC -10JC -12PC -12JC -15PC -15JC

    Untitled

    Abstract: No abstract text available
    Text: FT6175 HIGH SPEED 8Kx8 CACHE TAG STATIC RAM FEATURES High Speed Address-To-Match - 8 ns Maximum Access Time Data Retention at 2V for Battery Backup Operation High-Speed Read-Access Time Advanced CMOS Technology – 8/10/12/15/20/25 ns Commercial – 15/20/25 ns (Military)


    Original     		PDF FT6175 FT6175 Oct-05 Nov-05 Jan-08 SRAM118

    Untitled

    Abstract: No abstract text available
    Text: P4C174 HIGH SPEED 8K x 8 CACHE TAG STATIC RAM FEATURES High Speed Address-To-Match - 8 ns Maximum Access Time Data Retention at 2V for Battery Backup Operation High-Speed Read-Access Time Advanced CMOS Technology – 8/10/12/15/20/25 ns Commercial – 15/20/25 ns (Military)


    Original     		PDF P4C174 SRAM118 P4C174 Oct-05 SRAM118

    Untitled

    Abstract: No abstract text available
    Text: P4C174 HIGH SPEED 8K x 8 CACHE TAG STATIC RAM FEATURES High Speed Address-To-Match - 8 ns Maximum Access Time Data Retention at 2V for Battery Backup Operation High-Speed Read-Access Time Advanced CMOS Technology – 8/10/12/15/20/25 ns Commercial – 15/20/25 ns (Military)


    Original     		PDF P4C174 P4C174

    FT6175

    Abstract: Memory
    Text: FT6175 High Speed 8K x 8 Cache Tag Static Ram FEATURES High Speed Address-To-Match - 8 ns Maximum Access Time Data Retention at 2V for Battery Backup Operation High-Speed Read-Access Time Advanced CMOS Technology – 8/10/12/15/20/25 ns Commercial – 15/20/25 ns (Military)


    Original     		PDF FT6175 FT6175 SRAM118 Oct-05 Nov-05 Aug-06 Memory

    Untitled

    Abstract: No abstract text available
    Text: P4C174 HIGH SPEED 8K x 8 CACHE TAG STATIC RAM FEATURES High Speed Address-To-Match - 8 ns Maximum Access Time Data Retention at 2V for Battery Backup Operation High-Speed Read-Access Time Advanced CMOS Technology – 8/10/12/15/20/25 ns Commercial – 15/20/25 ns (Military)


    Original     		PDF P4C174 SRAM118 P4C174 Oct-05 SRAM118

    Untitled

    Abstract: No abstract text available
    Text: P4C174 HIGH SPEED 8K x 8 CACHE TAG STATIC RAM FEATURES High Speed Address-To-Match - 8 ns Maximum Access Time Data Retention at 2V for Battery Backup Operation High-Speed Read-Access Time Advanced CMOS Technology – 8/10/12/15/20/25 ns Commercial – 15/20/25 ns (Military)


    Original     		PDF P4C174 13-line SRAM118 SRAM118 P4C174 Oct-05 Nov-05 Aug-06

    P4C174

    Abstract: No abstract text available
    Text: P4C174 HIGH SPEED 8K x 8 CACHE TAG STATIC RAM FEATURES High Speed Address-To-Match - 8 ns Maximum Access Time Data Retention at 2V for Battery Backup Operation High-Speed Read-Access Time Advanced CMOS Technology – 8/10/12/15/20/25 ns Commercial – 15/20/25 ns (Military)


    Original     		PDF P4C174 13-line P4C174 iP4C174 SRAM118 SRAM118 Oct-05 Nov-05

    cache tag Static RAM

    Abstract: No abstract text available
    Text: FT6175 High Speed 8K x 8 Cache Tag Static Ram FEATURES High Speed Address-To-Match - 8 ns Maximum Access Time Data Retention at 2V for Battery Backup Operation High-Speed Read-Access Time Advanced CMOS Technology – 8/10/12/15/20/25 ns Commercial – 15/20/25 ns (Military)


    Original     		PDF FT6175 FT6175 Oct-05 Nov-05 Aug-06 SRAM118 cache tag Static RAM

    A3738

    Abstract: CA1023 8kx8 sram
    Text: ^EDI _ EDI8808CB Electronic Designs Inc High Speed, Low Power 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CB is a 65,536bit, high speed CMOS 64K bit CMOS Static Random Access Memory • Access Times 20,25,35, and 45ns


    OCR Scan     		PDF EDI8808CB EDI8808CB 536bit, D02VSS 0-A12 A3738 CA1023 8kx8 sram

    HM65256B-12

    Abstract: HM65256 HM68 HM65256BLP-10 HM65256B-20 65256B
    Text: HM65256B Series 32768-word X 8-bit High Speed Pseudo Static RAM • FEATURES HM65256BP Series • • Single 5V ±10% High Speed Access Time CE Access T im e . 100/120/150/200ns Address Access T im e .50/60/75/100ns


    OCR Scan     		PDF HM65256B 32768-word HM65256BP 100/120/150/200ns 50/60/75/100ns 160/190/235/310ns 55/65/80/105ns 175mW DP-28) HM65256BFP HM65256B-12 HM65256 HM68 HM65256BLP-10 HM65256B-20 65256B

    Untitled

    Abstract: No abstract text available
    Text: I: HIGH SPEED 128K 8K x 16 BIT IDT70825S/L SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) jdt) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • The ID T70825 is a high-speed 8K x 16bit Sequential Access Random Access Memory (SARAM). The SARAM


    OCR Scan     		PDF IDT70825S/L T70825 16bit MIL-STD-883, 84-pin G84-3) 80-pin PN80-1) 4A25771

    HM65256

    Abstract: No abstract text available
    Text: HM65256B Series 32768-word X 8-bit High Speed Pseudo Static RAM • FEA T U R ES • Single 5V ±10% • High Speed Access Time CE Access T im e . 100/120/150/200ns Address Access T im e. 50/60/75/100ns


    OCR Scan     		PDF HM65256B 32768-word 100/120/150/200ns 50/60/75/100ns 160/190/235/310ns 55/65/80/105ns 175mW 65256BP DP-28) HM65256BFP HM65256

    HM65256BFP-12T

    Abstract: HM65256BLP-10 HM65256BLSP-10 HM65256BLSP10
    Text: HMGS2S6B Series 32768-word X 8-bit High Speed Pseudo Static R A M • FE A T U R ES • Single 5V ±10% • High Speed Access Time CE Access T im e . 100/120/150/200ns Address Access Tim e. 50/60/75/100ns


    OCR Scan     		PDF 32768-word 100/120/150/200ns 50/60/75/100ns 160/190/235/310ns 55/65/80/105ns 175mW DP-28) 65256BSP HM65256BP-10 HM65256BP-12 HM65256BFP-12T HM65256BLP-10 HM65256BLSP-10 HM65256BLSP10

    Untitled

    Abstract: No abstract text available
    Text: IDT70824S/L HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features * * High-speed access - Military: 35/45ns (max.) - Commercial:20125135145ns (max.) Low-power operation - IDT70824S Active: 775mW(typ.) Standby: 5mW (typ.)


    OCR Scan     		PDF IDT70824S/L 35/45ns 20125135145ns 80-pin 84-pin IDT70824L MIL-PRF-38535 775mW 4Kx16Sequential MO-136,

    Untitled

    Abstract: No abstract text available
    Text: W D EDI88128CS \ 128Kx8 Monolithic Static Ram ELECTRONIC DESIGNS, INC. Features 128Kx8 Monolithic High Speed CMOS Static RAM 128Kx8 bit CMOS Static Random Access Memory Fast Access Times: 15*, 17*, 20,25,35,45, and 55ns The EDI88128CS is a high speed, high performance,


    OCR Scan     		PDF EDI88128CS 128Kx8 EDI88128CS 128Kx8 EDI88128LPS)

    EDI88128CS45CB

    Abstract: EDI88128LPS35TB EDI88128CS25CI A71E EDI88128CS25CB EDI88128CS25LB EDI88128LPS55TB p 32 lcc 300 r EDI88128CS EDI88128CS15CI
    Text: W5X EDI88128CS ELECTRONIC DESIGNS, INC 128Kx8 Monolithic Static Ram Features 128Kx8 Monolithic High Speed CMOS Static RAM 128Kx8 bit CMOS Static Random Access Memory Fast Access Times: 15*, 17* 20,25,35,45, and 55ns The EDI88128CS is a high speed, high performance,


    OCR Scan     		PDF EDI88128CS 128Kx8 EDI88128LPS) EDIB812BCS 12l96ECOfW91 EDI88128CS45CB EDI88128LPS35TB EDI88128CS25CI A71E EDI88128CS25CB EDI88128CS25LB EDI88128LPS55TB p 32 lcc 300 r EDI88128CS EDI88128CS15CI

    Untitled

    Abstract: No abstract text available
    Text: BAY 6 19S2 Data Sheet March 1992 L % AT&T Microelectronics ATT7C186 High-Speed CMOS SRAM 64 Kbits 8K x 8 , Flash Clear Features • High-speed read-access time — 12 ns maximum access time Plug-compatible with IDT7165 ■ High-speed flash clear Low-power operation


    OCR Scan     		PDF ATT7C186 IDT7165 28-pin, ATT7C186 DS91-133MMOS DS91-016MMOS)

    Untitled

    Abstract: No abstract text available
    Text: IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Integrated Device Technology, Inc. FEATURES: • High-speed access - Military: 35/45ns (max.) - Commercial: 20/25/35/45ns (max.) • Low-power operation - IDT70825S


    OCR Scan     		PDF IDT70825S/L 35/45ns 20/25/35/45ns IDT70825S 775mW IDT70825L MIL-STD-883, 84-pin G84-3)

    Untitled

    Abstract: No abstract text available
    Text: September 1990 Edition 1.0 - — - 1 . DATASHEET FUJITSU MB82B009-2S 1.152M-BIT HIGH-SPEED BiCMOS SRAM 128K Words x 9 Bits BiCMOS High-Speed Static Random Access Memory The Fujitsu MB82B009 is a high-speed static random access memory organized as


    OCR Scan     		PDF MB82B009-2S 152M-BIT MB82B009

    Untitled

    Abstract: No abstract text available
    Text: Integrated Device Technology, Inc. IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) FEATURES: DESCRIPTION: • 8K x 16 Sequential Access Random Access Memory (SARAM™) Th e ID T 7 082 5 is a high-speed 8K x 16bit Sequential


    OCR Scan     		PDF IDT70825S/L 16bit 0G17S12 IL-STD-883, 84-pin G84-3) 80-pin PN80-1)

    Untitled

    Abstract: No abstract text available
    Text: P4C174 HIGH SPEED 8K x 8 CACHE TAG STATIC RAM FEATURES High Speed Address-To-Match - 8 ns Maximum Access Time • Data Retention at 2V for Battery Backup Operation ■ Advanced CMOS Technology High-Speed Read-Access Time ■ Low Power Operation — Active: 750 mW Typical at 25 ns


    OCR Scan     		PDF P4C174 P4C174 -10PC -10JC -12PC -12JC -15PC -15JC -20PC -20JC

    Untitled

    Abstract: No abstract text available
    Text: P4C174 HIGH SPEED 8K x 8 CACHE TAG STATIC RAM FEATURES • High Speed Address-To-Match - 8 ns Maximum Access Time ■ Data Retention at 2V for Battery Backup Operation ■ Advanced CMOS Technology ■ High-Speed Read-Access Time ■ Low Power Operation — Active: 750 mW Typical at 25 ns


    OCR Scan     		PDF P4C174 -10PC -10JC -12PC -12JC -15PC -15JC -20PC