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    HIGH VOLTAGE SMD TRANSISTOR Search Results

    HIGH VOLTAGE SMD TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    HIGH VOLTAGE SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2d SMD PNP TRANSISTOR

    Abstract: TRANSISTOR SMD MARKING CODE 2d smd transistor 2d SMD TRANSISTOR MARKING 2D smd TRANSISTOR code marking 05 sot23 MARKING CODE SMD IC smd TRANSISTOR code marking 2d 2D SMD TRANSISTOR TRANSISTOR SMD MARKING CODE transistor smd marking 2d
    Text: SMD High Voltage Transistor PNP MMBTA92 SMD High Voltage Transistor (PNP) Features • This device is designed for high voltage driver applications • RoHS compliance SOT-23 Mechanical Data SOT-23, Plastic Package Case: Terminals: Weight: Solderable per MIL-STD-202G, Method 208


    Original     		PDF MMBTA92 OT-23 OT-23, MIL-STD-202G, 2d SMD PNP TRANSISTOR TRANSISTOR SMD MARKING CODE 2d smd transistor 2d SMD TRANSISTOR MARKING 2D smd TRANSISTOR code marking 05 sot23 MARKING CODE SMD IC smd TRANSISTOR code marking 2d 2D SMD TRANSISTOR TRANSISTOR SMD MARKING CODE transistor smd marking 2d

    smd TRANSISTOR 1D

    Abstract: SMD TRANSISTOR MARKING 1D TRANSISTOR SMD MARKING CODE 1d TRANSISTOR smd 1D SMD TRANSISTOR MARKING BR MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE MARKING SMD IC CODE 1D smd transistor smd TRANSISTOR code marking 05 sot23
    Text: SMD High Voltage Transistor NPN MMBTA42 SMD High Voltage Transistor (NPN) Features • This device is designed for application as a video output to drive color CRT and other high voltage applications. • RoHS compliance SOT-23 Mechanical Data SOT-23, Plastic Package


    Original     		PDF MMBTA42 OT-23 OT-23, MIL-STD-202G, smd TRANSISTOR 1D SMD TRANSISTOR MARKING 1D TRANSISTOR SMD MARKING CODE 1d TRANSISTOR smd 1D SMD TRANSISTOR MARKING BR MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE MARKING SMD IC CODE 1D smd transistor smd TRANSISTOR code marking 05 sot23

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Type SMD Transistors IC Product specification 2SC5209 Features High voltage VCEO=50V. Small package for mounting. High hFE = 600 to 1800. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Emitter-base voltage


    Original     		PDF 2SC5209 50age 100mA 500mA -10mA

    SMD AHp

    Abstract: SMD TRANSISTOR MARKING AHP smd transistor marking 36 2SA1759
    Text: Transistors SMD Type High-Voltage Switching Transistor 2SA1759 Features High breakdown voltage Low saturation voltage High switching speed Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter Voltage VCEO -400 V Collector-base Voltage


    Original     		PDF 2SA1759 100ms 40X40X0 -400V -20mA -10mA -100mA SMD AHp SMD TRANSISTOR MARKING AHP smd transistor marking 36 2SA1759

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Type SMD Transistors IC Product specification 2SC5211 Features High voltage VCEO=50V. Small package for mounting. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 55 V Emitter-base voltage VEBO 4 V Collector-emitter voltage


    Original     		PDF 2SC5211 100mA 200mA -10mA

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Type SMD Transistors IC Product specification 2SC5069 Features High current capacity. Adoption of MBIT process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating


    Original     		PDF 2SC5069 250mm

    2SA1200

    Abstract: smd marking Y 2SC2880 SMD B100
    Text: Transistors SMD Type High Voltage Switching Applications 2SA1200 Features High Voltage : VCEO = -150V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SC2880 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage


    Original     		PDF 2SA1200 -150V 120MHz 2SC2880 -10mA -30mA 2SA1200 smd marking Y 2SC2880 SMD B100

    2SC2880

    Abstract: 2SA1200
    Text: Transistors SMD Type High Voltage Switching Applications 2SC2880 Features High Voltage : VCEO = 150V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SA1200 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage


    Original     		PDF 2SC2880 120MHz 2SA1200 2SC2880 2SA1200

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SA1759 Features High breakdown voltage Low saturation voltage High switching speed Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter Voltage VCEO -400 V Collector-base Voltage VCBO -400


    Original     		PDF 2SA1759 100ms 40X40X0 -20mA -10mA -100mA -150V

    SMD BR

    Abstract: 2sc3438 2sc343 2SA1368 smd b_r
    Text: Transistors SMD Type High Voltage Drive Applications 2SA1368 Features High Voltage VCEO = -100V High Collector Current ICM = -800mA High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3438 Absolute Maximum Ratings Ta = 25


    Original     		PDF 2SA1368 -100V -800mA) 500mW 2SC3438 -10mA -150mA -15mA SMD BR 2sc3438 2sc343 2SA1368 smd b_r

    820 marking

    Abstract: 2SD2537
    Text: Transistors SMD Type Medium Power Transistor 2SD2537 Features High DC current gain. High emitter-base voltage. Low saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage


    Original     		PDF 2SD2537 500mA, -50mA, 100MHz 820 marking 2SD2537

    AK marking

    Abstract: SMD AK SMD BR 08 2SA1740
    Text: Transistors SMD Type High-Voltage Driver Applications 2SA1740 Features High Breakdown Voltage Adoption of MBIT Process Excellent hFE Linearlity. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage


    Original     		PDF 2SA1740 -50mA -10mA AK marking SMD AK SMD BR 08 2SA1740

    SMD BR 08

    Abstract: 2SC4548
    Text: Transistors SMD Type High-Voltage Driver Applications 2SC4548 Features High Breakdown Voltage Adoption of MBIT Process Excellent hFE Linearlity. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage


    Original     		PDF 2SC4548 SMD BR 08 2SC4548

    2SC3736

    Abstract: hFE CLASSIFICATION Marking
    Text: Transistors SMD Type NPN Silicon Epitaxia 2SC3736 Features High speed,high voltage switching. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 80 V Collector-emitter voltage VCEO 45


    Original     		PDF 2SC3736 500mA -100mA 2SC3736 hFE CLASSIFICATION Marking

    2SC4102

    Abstract: No abstract text available
    Text: Transistors SMD Type High-voltage Amplifier Transistor 2SC4102 Features High breakdown voltage. VCEO = 120V 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage


    Original     		PDF 2SC4102 100MHz 2SC4102

    2SA1579

    Abstract: smd transistor rr
    Text: Transistors SMD Type High-Voltage Amplifier Transistor 2SA1579 Features High breakdown voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO -120


    Original     		PDF 2SA1579 -100V -10mA, 100MHz 2SA1579 smd transistor rr

    SMD 1L

    Abstract: 500ma 40v pnp 2SA1463 hFE CLASSIFICATION Marking
    Text: Transistors IC SMD Type PNP Silicon Epitaxia 2SA1463 Features High speed,high voltage switching. Low Collector Saturation Voltage Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO -60 V Collecto to emitter voltage


    Original     		PDF 2SA1463 -500mA -50mA 100mA SMD 1L 500ma 40v pnp 2SA1463 hFE CLASSIFICATION Marking

    SMD iC MARKING AE

    Abstract: 2SA1419 ae marking
    Text: Transistors SMD Type High-Voltage Switching Applications 2SA1419 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage


    Original     		PDF 2SA1419 -500mA -50mA SMD iC MARKING AE 2SA1419 ae marking

    2SA1417

    Abstract: No abstract text available
    Text: Transistors SMD Type High-Voltage Switching Applications 2SA1417 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage


    Original     		PDF 2SA1417 -100mA 2SA1417

    smd marking cc

    Abstract: 2SC3647
    Text: Transistors SMD Type High-Voltage Switching Applications 2SC3647 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage


    Original     		PDF 2SC3647 Min400 100mA smd marking cc 2SC3647

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type High-Voltage Switching Applications 2SC3649 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage


    Original     		PDF 2SC3649 500mA

    D marking amplifier

    Abstract: 2SA1201 2SC2881
    Text: Transistors SMD Type Voltage Amplifier Applications 2SA1201 Features High Voltage : VCEO = -120V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SC2881 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage


    Original     		PDF 2SA1201 -120V 120MHz 2SC2881 -10mA -100mA -500mA -50mA D marking amplifier 2SA1201 2SC2881

    ad marking

    Abstract: transistor smd marking AD 2SA1418
    Text: Transistors SMD Type High-Voltage Switching Applications 2SA1418 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage


    Original     		PDF 2SA1418 -250mA -25mA -50mA ad marking transistor smd marking AD 2SA1418

    2SC3646

    Abstract: No abstract text available
    Text: Transistors SMD Type High-Voltage Switching Applications 2SC3646 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Time Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage


    Original     		PDF 2SC3646 400mA 100mA 2SC3646