PNP Transistors
Abstract: No abstract text available
Text: 40362L High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40362L VCEV hFE 35 IC Notes VCEO 70 hFE A .05 COB Polarity PNP ICEV Power Dissipation
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40362L
40362L
O-205AD/TO-39
07-Sep-2010
PNP Transistors
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40394
Abstract: PNP Transistors MD14
Text: 40394 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40394 VCEV 60 hFE 15 IC .15 Notes VCEO 40 hFE A .001 COB Polarity PNP ICEV Power Dissipation
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07-Sep-2010
40394
PNP Transistors
MD14
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MJE5852
Abstract: No abstract text available
Text: MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITY APPLICATIONS: ■ SWITCHING REGULATORS ■ MOTOR CONTROL ■ INVERTERS DESCRIPTION The MJE5852 is manufactured using high voltage PNP multiepitaxial technology for high switching
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MJE5852
MJE5852
O-220
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HIGH VOLTAGE PNP POWER TRANSISTOR
Abstract: MJE5852 l5 transistor PNP
Text: MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITY APPLICATIONS: SWITCHING REGULATORS ■ MOTOR CONTROL ■ INVERTERS ■ DESCRIPTION The MJE5852 is manufactured using high voltage PNP multiepitaxial technology for high switching
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MJE5852
MJE5852
O-220
HIGH VOLTAGE PNP POWER TRANSISTOR
l5 transistor PNP
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2N6211
Abstract: mospec s16c40c mospec HIGH-VOLTAGE OPERATIONAL AMPLIFIER 2N6212 mospec diode Mospec Semiconductor transistor b 1560 2N6213 TRANSISTOR 1385
Text: A MOSPEC MEDIUM-POWER HIGH VOLTAGE PNP POWER TRANSISTORS PNP 2N6211 2N6212 2N6213 Designed for high-speed switching and linear amplifier application for high-voltage operational amplifier,switching regulators,converters,inverters,deflection stages and hig
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2N6211
2N6212
2N6213
25-350V
200mA
2N6211
mospec s16c40c
mospec
HIGH-VOLTAGE OPERATIONAL AMPLIFIER
2N6212
mospec diode
Mospec Semiconductor
transistor b 1560
2N6213
TRANSISTOR 1385
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2N6211
Abstract: 2N6212 2N6213 m6213 transistor SST 250
Text: MEDIUM-POWER HIGH VOLTAGE PNP POWER TRANSISTORS PNP 2N6211 2N6212 2N6213 Designed for high-speed switching and linear amplifier application for high-voltage operational amplifier,switching regulators, converters, inverters, deflection stages and hig fidelity amplifiers.
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2N6211
2N6212
2N6213
2N6213
200oC
Tj-150Â
V-VCE-10V
m6213
transistor SST 250
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2N6212
Abstract: 2N6213 m6213 2N6211
Text: Ü& MOS PEC MEDIUM-POWER HIGH VOLTAGE PNP POWER TRANSISTORS PNP 2N6211 2N6212 2N6213 Designed for high-speed switching and linear amplifier application for high-voltage operational amplifier,switching regulators, converters, inverters, deflection stages and hig
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25-350V
200mA
2N6211
2N6212
2N6213
2N6213
200oC
Tj-150Â
m6213
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N9260
Abstract: STN9260 STN92 High voltage fast-switching PNP power transistor
Text: STN9260 High voltage fast-switching PNP power transistor Features • High voltage capability ■ Fast switching speed 4 Applications 2 1 ■ Lighting ■ Switch mode power supply 3 SOT-223 Description This device is a high voltage fast-switching PNP power transistor. It is manufactured using high
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STN9260
OT-223
N9260
OT-223
STN9260
STN92
High voltage fast-switching PNP power transistor
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High voltage fast-switching PNp power transistor
Abstract: No abstract text available
Text: STN9360 High voltage fast-switching PNP power transistor Datasheet − preliminary data Features • High voltage capability ■ Fast switching speed 4 Applications 2 1 ■ Lighting ■ Switch mode power supply 3 SOT-223 Description This device is a high voltage fast-switching PNP
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STN9360
OT-223
High voltage fast-switching PNp power transistor
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40348
Abstract: No abstract text available
Text: 40348 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40348 VCEV 90 hFE 30 IC .30 Notes VCEO 65 hFE A .30 COB Polarity NPN ICEV Power Dissipation
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O-205AD/TO-39
07-Sep-2010
40348
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PNP Transistors
Abstract: TO-205AD 40349
Text: 40349 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40349 VCEV 160 hFE 30 IC .15 Notes VCEO 140 hFE A .15 COB Polarity NPN ICEV Power Dissipation
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O-205AD/TO-39
07-Sep-2010
PNP Transistors
TO-205AD
40349
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STN93
Abstract: No abstract text available
Text: STN9360 High voltage fast-switching PNP power transistor Datasheet — production data Features • High voltage capability ■ Fast switching speed 4 Applications 1 ■ Lighting ■ Switch mode power supply 2 3 SOT-223 Description This device is a high voltage fast-switching PNP
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STN9360
OT-223
STN93
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MJE5852
Abstract: No abstract text available
Text: MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITY APPLICATIONS: SWITCHING REGULATORS ■ MOTOR CONTROL ■ INVERTERS ■ DESCRIPTION The MJE5852 is manufactured using High
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MJE5852
MJE5852
O-220
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NTE2305
Abstract: No abstract text available
Text: NTE2305 NPN & NTE2306 (PNP) Silicon Complementary Transistors High Voltage Power Amplifier Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits.
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NTE2305
NTE2306
NTE2305
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DTS-411
Abstract: DTS411 PNP Transistors
Text: DTS411 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type DTS411 VCEV 300 hFE 30 IC 1.0 Notes VCEO 300 hFE A 1.0 COB Polarity NPN ICEV 300
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DTS411
DTS411
O-204AA/TO-3
07-Sep-2010
DTS-411
PNP Transistors
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PNP Transistors
Abstract: MJE1320
Text: MJE1320 High Voltage Silicon Epoxy High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon Epoxy High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type MJE1320 VCEV 1800 hFE 2.5 IC 2 Notes VCEO 900 hFE A 2.0 COB 80 Industry Type
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MJE1320
MJE1320
O-220AB/TO-220
07-Sep-2010
PNP Transistors
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PNP Transistors
Abstract: hFE-20
Text: 2N6575 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 2N6575 VCEV 700 hFE 20 IC 7.0 Notes VCEO 300 hFE A 3.0 COB 220 Industry Type 2N6575
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2N6575
2N6575
O-204AA/TO-3
07-Sep-2010
PNP Transistors
hFE-20
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MJE5852
Abstract: No abstract text available
Text: MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITY • ■ ■ APPLICATIONS: SWITCHING REGULATORS ■ MOTOR CONTROL ■ INVERTERS ■ 3 1 DESCRIPTION The MJE5852 is manufactured using High
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MJE5852
MJE5852
O-220
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PNP Transistors
Abstract: "PNP Transistors"
Text: 2N5320 High Voltage Silicon Low Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon Low Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 2N5320 VCBO 100 hFE 30 IC 500 Industry Type 2N5320 Visa & Mastercard Accepted! Notes
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2N5320
2N5320
O-205AD/TO-39
07-Sep-2010
PNP Transistors
"PNP Transistors"
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Untitled
Abstract: No abstract text available
Text: UTC 2SA1201 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1201 is designed for power amplifier and 1 voltage amplifier applications. FEATURES *High voltage: VCEO= -120V *High transition frequency: fT=120MHz typ.
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2SA1201
2SA1201
-120V
120MHz
OT-89
250mm2
QW-R208-024
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PNP Transistors
Abstract: TO206AA
Text: 2N6432 High Voltage Silicon Low Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon Low Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 2N6432 VCBO 200 hFE 30 IC 20 Industry Type 2N6432 Visa & Mastercard Accepted! Notes
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2N6432
2N6432
O-206AA/TO-18
07-Sep-2010
PNP Transistors
TO206AA
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2SA1201
Abstract: No abstract text available
Text: UTC 2SA1201 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1201 is designed for power amplifier and 1 voltage amplifier applications. FEATURES *High voltage: VCEO= -120V *High transition frequency: fT=120MHz typ.
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2SA1201
2SA1201
-120V
120MHz
OT-89
QW-R208-024
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2n6031
Abstract: No abstract text available
Text: Central 2N6031 TM Semiconductor Corp. PNP SILICON POWER TRANSISTOR 140 VOLTS, 200 WATTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6031 is a 16 Ampere PNP Silicon Power Transistor designed for use in high power amplifiers and high voltage switching regulator circuits.
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2N6031
200mA
500kHz
100kHz
27-August
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MJE4353 equivalent
Abstract: equivalent transistor K 3634 to220 amps 1200 v BU108 SDT9207 "cross reference" BU100 D45H11 cross reference cross reference bd830 2SD1815 "cross reference" 2sd1815 cross reference
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJE4342 High-Voltage Ċ High Power Transistors MJE4343 PNP . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector–Emitter Sustaining Voltage —
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MJE4342
MJE4352
MJE4343
MJE4353
TIP73B
TIP74
MJE4353 equivalent
equivalent transistor K 3634
to220 amps 1200 v
BU108
SDT9207 "cross reference"
BU100
D45H11 cross reference
cross reference bd830
2SD1815 "cross reference"
2sd1815 cross reference
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