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    HIGH VOLTAGE PNP DARLINGTON Search Results

    HIGH VOLTAGE PNP DARLINGTON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ULS2003H/R Rochester Electronics LLC ULS2003 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy
    ULS2022R/B Rochester Electronics LLC ULS2022 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    HIGH VOLTAGE PNP DARLINGTON Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FCX705

    Abstract: FCX705TA
    Text: FCX705 120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1.3V; IC= -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance combining low VCE (sat) and very high HFE to give extremely low on state losses at


    Original     		PDF FCX705 OT223 FCX705 FCX705TA

    marking 705

    Abstract: Zetex T 705 TRANSISTOR MARKING 705 FCX705 FCX705TA
    Text: FCX705 120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1.3V; IC= -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance combining low VCE (sat) and very high HFE to give extremely low on state losses at


    Original     		PDF FCX705 OT223 marking 705 Zetex T 705 TRANSISTOR MARKING 705 FCX705 FCX705TA

    Untitled

    Abstract: No abstract text available
    Text: FCX705 120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1.3V; IC= -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance combining low VCE (sat) and very high HFE to give extremely low on state losses at


    Original     		PDF FCX705 OT223

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UP1496 Preliminary PNP SILICON TRANSISTOR PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR „ 3 DESCRIPTION The UTC UP1496 are series of PNP silicon planar transistors which have gain of 500 at IC=100mA. It can be used in such applications like battery powered circuits and darlington


    Original     		PDF UP1496 UP1496 100mA. OT-23 UP1496G-AE3-R QW-R206-095

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UP1496 Preliminary PNP SILICON TRANSISTOR PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR „ 3 DESCRIPTION The UTC UP1496 are series of PNP silicon planar transistors which have gain of 500 at IC=100mA. It can be used in such applications like battery powered circuits and darlington


    Original     		PDF UP1496 UP1496 100mA. OT-23 UP1496L UP1496G UP1496-AE3-R UP1496L-AE3-R UP1496G-AE3-R

    transistor 3569

    Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —


    Original     		PDF Bandwi32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 transistor 3569 t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033

    MJE4353 equivalent

    Abstract: equivalent transistor K 3634 to220 amps 1200 v BU108 SDT9207 "cross reference" BU100 D45H11 cross reference cross reference bd830 2SD1815 "cross reference" 2sd1815 cross reference
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJE4342 High-Voltage Ċ High Power Transistors MJE4343 PNP . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector–Emitter Sustaining Voltage —


    Original     		PDF MJE4342 MJE4352 MJE4343 MJE4353 TIP73B TIP74 MJE4353 equivalent equivalent transistor K 3634 to220 amps 1200 v BU108 SDT9207 "cross reference" BU100 D45H11 cross reference cross reference bd830 2SD1815 "cross reference" 2sd1815 cross reference

    2N5631 equivalent

    Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —


    Original     		PDF 2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator

    Untitled

    Abstract: No abstract text available
    Text: UTC TIP110A PNP EXPITAXIAL PLANAR TRANSISTOR LOW SATURATION VOLTAGE PNP DARLINGTON TRANSISTOR DESCRIPTION The UTC TIP110A is designed for using in general purpose amplifier and switching applications. FEATURE 1 *Low VCE sat *High current gain TO-220 1:BASE


    Original     		PDF TIP110A TIP110A O-220 100mA QW-R203-004

    high gain low voltage PNP transistor

    Abstract: TIP110A
    Text: UTC TIP110A PNP EXPITAXIAL PLANAR TRANSISTOR LOW SATURATION VOLTAGE PNP DARLINGTON TRANSISTOR DESCRIPTION The UTC TIP110A is designed for using in general purpose amplifier and switching applications. FEATURE 1 *Low VCE sat *High current gain TO-220 1:BASE


    Original     		PDF TIP110A TIP110A O-220 100ms QW-R203-004 high gain low voltage PNP transistor

    Zetex T 705

    Abstract: No abstract text available
    Text: FCX705 120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUM M ARY V CEO=120V; V CE sat = 1.3V; IC= -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance combining low VCE (sat) and very high HFE to give extremely low on state losses at


    Original     		PDF FCX705 OT223 Zetex T 705

    BDX66C

    Abstract: BDX66B BDX66A BDX66 BDX66 BDX66B C22B BDX66A
    Text: BDX 66, A, B, C PNP SILICON DARLINGTONS High current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage


    Original     		PDF BDX66 BDX66A BDX66B BDX66C BDX66C BDX66B BDX66A BDX66 BDX66 BDX66B C22B BDX66A

    BDX66C

    Abstract: BDX66B BDX66A BDX66 BDX66B BDX66 BDX66A BDX 66 A
    Text: BDX 66, A, B, C PNP SILICON DARLINGTONS High current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings -VCEO Collector-Emitter Voltage -VCBO Collector-Base Voltage -VEBO Emitter-Base Voltage


    Original     		PDF BDX66 BDX66A BDX66B BDX66C BDX66C BDX66B BDX66A BDX66 BDX66B BDX66 BDX66A BDX 66 A

    229 transistor npn

    Abstract: PNP avalanche transistor high gain PNP RF TRANSISTOR "dual TRANSISTORs" pnp npn SM-8 BIPOLAR TRANSISTOR darlington sot23 npn transistor pnp 1a high gain low voltage NPN transistor sot23 17 sot23 NPN TRANSISTORS LIST
    Text: SHORTFORM TABLES INDEX Table No. Table D escription A: SOT23 BIPO LARTR AN SISTO R S: Page no. High Current SuperSO T npn /(pnp) 2 -6 2)a SuperSO T (npn) 2 -6 2)b SuperSO T (pnp) 2 -7 3) High Perfom ance Low Voltage (npn)/(pnp) 2 -8 4) High Perfom ance High Voltage (npn)/(pnp)


    OCR Scan     		PDF OT223 750mA) 229 transistor npn PNP avalanche transistor high gain PNP RF TRANSISTOR "dual TRANSISTORs" pnp npn SM-8 BIPOLAR TRANSISTOR darlington sot23 npn transistor pnp 1a high gain low voltage NPN transistor sot23 17 sot23 NPN TRANSISTORS LIST

    BC450

    Abstract: No abstract text available
    Text: CRO BC450 PNP SILICON TRANSISTOR DESCRIPTION i > 4 .6 8 i O J 8 BC450 is PNP silicon planar transistor designed for use as high voltage driver and output transistor. Particularly suitable as power darlington drivers. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage


    OCR Scan     		PDF BC450 BC450 300mA 625mW 300/iS, 100mA Nov-97

    BD 650

    Abstract: b0644 BD648 bd646 BD 644 B0648 B0646 bd 648 bd650 darlington bd 645
    Text: BD 644 • BD 646 • BD 648 • BD 650 Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage


    OCR Scan     		PDF

    MPSA92

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE2-MARCH 94_ FEATURES * High voltage APPLICATIONS * Telephone dialler circuits ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE UNIT VCBO -300 V Collector-Emitter Voltage


    OCR Scan     		PDF -100nA, -10MA, 300jis. MPSA92

    NSG2556

    Abstract: No abstract text available
    Text: NSG2556 PNP 20 AMPERE PNP SILICON DARLINGTON POWER TRANSISTOR P N P DARLINGTON POWER TRANSISTOR General Purpose Amplifier Low Frequency Switching High DC Current Gain Monolithic Construction Built in Base Emitter Shunt Resistors MAXIMUM RATINGS Rating Collector-Emitter Voltage


    OCR Scan     		PDF NSG2556

    ge133

    Abstract: No abstract text available
    Text: KSB1022 PNP SILICON DARLINGTON TRANSISTOR HIGH POWER SWITCHING APPLICATIONS • High D C Current Gain • Low Collector Emitter Saturation Voltage • Complement to KSD1417 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector B ase Voltage VcBO -6 0 V Collector Emitter Voltage


    OCR Scan     		PDF KSB1022 KSD1417 ge133

    spark killer

    Abstract: No abstract text available
    Text: O rdering num ber: EN 1831B LB 1205 N0.1831B Monolithic Digital IÇ High-Voltage, High-Current Darlington Driver Functions and Features . 4-unit, high-voltage 65V , high-current (1.5A) Darlington driver . PNP input type (Low active) . On-chip spark killer diodes


    OCR Scan     		PDF 1831B 7097KI 6265KI D203KI LB1205 spark killer

    Untitled

    Abstract: No abstract text available
    Text: TIP142T TIP147T COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . STM PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION . LOW VOLTAGE . HIGH CURRENT . HIGH GAIN APPLICATIONS . GENERAL PURPOSE SWITCHING DESCRIPTION


    OCR Scan     		PDF TIP142T TIP147T TIP142T O-220 TIP147T.

    Untitled

    Abstract: No abstract text available
    Text: KSB1022 PNP SILICON DARLINGTON TRANSISTOR HIGH POWER SWITCHING APPLICATIONS • High DC Current Gain • Low Collector Emitter Saturation Voltage • Complement to KSD1417 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage C haracteristic VcBO Symbol


    OCR Scan     		PDF KSB1022 KSD1417

    6265K

    Abstract: DIP16F LB1205
    Text: Ordering num ber: EN 1 8 3 1 C Monolithic Digital 1C LB 1205 N0.1831C High-Voltage, High-Current Darlington Driver Functions and Features . 4-unit, high-voltage 65V , high-current (1.5A) Darlington driver . PNP input type (Low active) . On-chip spark killer diodes


    OCR Scan     		PDF 1831C LB1205 6265K DIP16F LB1205

    Untitled

    Abstract: No abstract text available
    Text: KSB1022 PNP SILICON DARLINGTON TRANSISTOR HIGH POWER SWITCHING APPLICATIONS • High DC Current Gain • Low Collector Emitter Saturation Voltage • Complement to KSD1417 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage C haracteristic VcBO Sym bol


    OCR Scan     		PDF KSB1022 KSD1417