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    HIGH VOLTAGE NPN Search Results

    HIGH VOLTAGE NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    High-End-Gas-Cooker Renesas Electronics Corporation High-End Gas Cooker Reference Design Visit Renesas Electronics Corporation
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    HIGH VOLTAGE NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN3339 NPN Triple Diffused Planar Silicon Transistor 2SC4476 1800V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifier. · High voltage switching. · Dynamic focus. unit:mm


    Original     		PDF ENN3339 2SC4476 800V/10mA 2010C 2SC4476]

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN3338 NPN Triple Diffused Planar Silicon Transistor 2SC4475 1800V/3mA High-Voltage Amplifier, High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifier. · High voltage switching. · Dynamic focus. unit:mm


    Original     		PDF ENN3338 2SC4475 800V/3mA 2010C 2SC4475]

    2SC4475

    Abstract: ITR07067 ITR07068 ITR07070 ITR07071 VITR07069
    Text: Ordering number:ENN3338 NPN Triple Diffused Planar Silicon Transistor 2SC4475 1800V/3mA High-Voltage Amplifier, High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifier. · High voltage switching. · Dynamic focus. unit:mm


    Original     		PDF ENN3338 2SC4475 800V/3mA 2010C 2SC4475] O-220AB 2SC4475 ITR07067 ITR07068 ITR07070 ITR07071 VITR07069

    EN3338

    Abstract: 2SC4475
    Text: Ordering number:EN3338 NPN Triple Diffused Planar Silicon Transistor 2SC4475 1800V/3mA High-Voltage Amplifier, High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifier. · High voltage switching. · Dynamic focus. unit:mm


    Original     		PDF EN3338 2SC4475 800V/3mA 2010C 2SC4475] O-220AB SC-46 EN3338 2SC4475

    2SC4476

    Abstract: ITR07077 ITR07078 ITR07080 ITR07081 VITR07079
    Text: Ordering number:ENN3339 NPN Triple Diffused Planar Silicon Transistor 2SC4476 1800V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifier. · High voltage switching. · Dynamic focus. unit:mm


    Original     		PDF ENN3339 2SC4476 800V/10mA 2010C 2SC4476] O-220AB 2SC4476 ITR07077 ITR07078 ITR07080 ITR07081 VITR07079

    2SC4476

    Abstract: No abstract text available
    Text: Ordering number:EN3339 NPN Triple Diffused Planar Silicon Transistor 2SC4476 1800V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifier. · High voltage switching. · Dynamic focus. unit:mm


    Original     		PDF EN3339 2SC4476 800V/10mA 2010C 2SC4476] O-220AB SC-46 2SC4476

    Transistor C G 774 6-1

    Abstract: 2N3440
    Text: 2N3440 High Voltage Transistor Features: • NPN High Voltage Silicon Transistor. • High Voltage Silicon Planar Transistors used in High Voltage and High Power Amplifier Applications. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39 B 7.74


    Original     		PDF 2N3440 Transistor C G 774 6-1 2N3440

    2sc3676

    Abstract: No abstract text available
    Text: Ordering number:ENN1801E NPN Triple Diffused Planar Silicon Transistor 2SC3676 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifiers. · High-voltage switching applications. · Dynamic focus applications.


    Original     		PDF ENN1801E 2SC3676 00V/300mA 2010C 2SC3676] 2sc3676

    2SC3675

    Abstract: TRANSISTOR 2sC3675 SC46
    Text: Ordering number:EN1800E NPN Triple Diffused Planar Silicon Transistor 2SC3675 900V/100mA High-Voltage Amplifier High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifiers. · High-voltage switching applications. · Dynamic focus applications.


    Original     		PDF EN1800E 2SC3675 00V/100mA 2010C 2SC3675] O-220AB 2SC3675 TRANSISTOR 2sC3675 SC46

    2SC3676

    Abstract: ITR05795 ITR05797 ITR05798 VITR05796
    Text: Ordering number:ENN1801E NPN Triple Diffused Planar Silicon Transistor 2SC3676 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifiers. · High-voltage switching applications. · Dynamic focus applications.


    Original     		PDF ENN1801E 2SC3676 00V/300mA 2010C 2SC3676] O-220AB 2SC3676 ITR05795 ITR05797 ITR05798 VITR05796

    2SC3676

    Abstract: SC46
    Text: Ordering number:EN1801E NPN Triple Diffused Planar Silicon Transistor 2SC3676 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifiers. · High-voltage switching applications. · Dynamic focus applications.


    Original     		PDF EN1801E 2SC3676 00V/300mA 2010C 2SC3676] O-220AB 2SC3676 SC46

    2SC3675

    Abstract: ITR05786 ITR05787 ITR05788 ITR05789
    Text: Ordering number:ENN1800E NPN Triple Diffused Planar Silicon Transistor 2SC3675 900V/100mA High-Voltage Amplifier High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifiers. · High-voltage switching applications. · Dynamic focus applications.


    Original     		PDF ENN1800E 2SC3675 00V/100mA 2010C 2SC3675] O-220AB 2SC3675 ITR05786 ITR05787 ITR05788 ITR05789

    marking 1d

    Abstract: MMBTA42 MMBTA42-AE3-R MMBTA42L MMBTA42L-AE3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA42 NPN SILICON TRANSISTOR HIGH VOLTAGE RANSISTOR „ DESCRIPTION The UTC MMBTA42 are high voltage transistors, designed for telephone switch and high voltage switch. „ FEATURES * Collector-Emitter voltage: VCEO=300V * High current gain


    Original     		PDF MMBTA42 MMBTA42 350mW MMBTA42L MMBTA42-AE3-R MMBTA42L-AE3-R OT-23 QW-R206-004 marking 1d MMBTA42-AE3-R MMBTA42L MMBTA42L-AE3-R

    MMBTA42G-AE3-R

    Abstract: MMBTA42 MMBTA42-AE3-R MMBTA42L MMBTA42L-AE3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA42 NPN SILICON TRANSISTOR HIGH VOLTAGE RANSISTOR „ DESCRIPTION The UTC MMBTA42 are high voltage transistors, designed for telephone switch and high voltage switch. „ FEATURES * Collector-Emitter voltage: VCEO=300V * High current gain


    Original     		PDF MMBTA42 MMBTA42 350mW MMBTA42L MMBTA42G MMBTA42-AE3-R MMBTA42L-AE3-R MMBTA42G-AE3-R OT-23 QW-R206-004 MMBTA42G-AE3-R MMBTA42-AE3-R MMBTA42L MMBTA42L-AE3-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA42 NPN SILICON TRANSISTOR HIGH VOLTAGE RANSISTOR „ DESCRIPTION The UTC MMBTA42 are high voltage transistors, designed for telephone switch and high voltage switch. „ FEATURES * Collector-Emitter voltage: VCEO=300V * High current gain


    Original     		PDF MMBTA42 MMBTA42 350mW MMBTA42L MMBTA42-AE3-R MMBTA42L-AE3-R OT-23 QW-R206-004

    SOT23 1D.L

    Abstract: MMBTA42 MMBTA42-AE3-R MMBTA42L MMBTA42L-AE3-R QW-R206 MMBTA42G-AE3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA42 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ DESCRIPTION The UTC MMBTA42 are high voltage transistors, designed for telephone switch and high voltage switch. „ FEATURES * Collector-Emitter voltage: VCEO=300V * High current gain


    Original     		PDF MMBTA42 MMBTA42 350mW MMBTA42L MMBTA42G MMBTA42-AE3-R MMBTA42L-AE3-R MMBTA42G-AE3-R OT-23 QW-R206-004 SOT23 1D.L MMBTA42-AE3-R MMBTA42L MMBTA42L-AE3-R QW-R206 MMBTA42G-AE3-R

    STN0214

    Abstract: N0214 Power Bipolar Transistor
    Text: STN0214 Very high voltage NPN power transistor Features • High gain ■ Very high voltage capability 4 Applications 1 ■ Haptic ■ High voltage solenoid driving 2 3 SOT-223 Description The device is an NPN power bipolar transistor manufactured using the latest high-voltage


    Original     		PDF STN0214 OT-223 N0214 OT-223 STN0214 Power Bipolar Transistor

    SOT-23 1D

    Abstract: No abstract text available
    Text: UTC MMBTA42 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MMBTA42 are high voltage transistors, designed for telephone switch and high voltage switch. 2 FEATURES 1 *Collector-Emitter voltage: VCEO=300V *High current gain *Collector Dissipation:


    Original     		PDF MMBTA42 MMBTA42 350mW OT-23 QW-R206-004 SOT-23 1D

    MJE4353 equivalent

    Abstract: equivalent transistor K 3634 to220 amps 1200 v BU108 SDT9207 "cross reference" BU100 D45H11 cross reference cross reference bd830 2SD1815 "cross reference" 2sd1815 cross reference
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJE4342 High-Voltage Ċ High Power Transistors MJE4343 PNP . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector–Emitter Sustaining Voltage —


    Original     		PDF MJE4342 MJE4352 MJE4343 MJE4353 TIP73B TIP74 MJE4353 equivalent equivalent transistor K 3634 to220 amps 1200 v BU108 SDT9207 "cross reference" BU100 D45H11 cross reference cross reference bd830 2SD1815 "cross reference" 2sd1815 cross reference

    2N5631

    Abstract: 2n6031 2N5629 2n6030 2n5630
    Text: ON Semiconductort NPN High-Voltage Ċ High Power Transistors 2N5630 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. PNP 2N5631 2N6030 • High Collector Emitter Sustaining Voltage — • •


    Original     		PDF 2N5630 2N5631 2N6030 2N6031 2N5630, 2N6030 2N5631, 2N6031 2N5629

    High-Voltage Amplifiers

    Abstract: 2SC3675
    Text: Ordering num ber: EN1800E 2SC3675 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications Applications • High-voltage amplifiers. • High-voltage switching applications. • Dynamic focuB applications. Features


    OCR Scan     		PDF EN1800E High-Voltage Amplifiers 2SC3675

    2SC4475

    Abstract: No abstract text available
    Text: Ordering number : EN3338 2 S C 4 4 7 5 NPN Triple Diffused Planar Silicon Transistor No.3338 High-Voltage Amp, High-Voltage Switching Applications Applications • High voltage amp • High voltage switching • Dynamic focus F eatu res • High breakdown voltage Vqeo nrin = 1800V


    OCR Scan     		PDF EN3338 2SC4475

    Untitled

    Abstract: No abstract text available
    Text: Ordering num ber: EN 1800E _ 2SC3675 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications A p p licatio n s • High-voltage amplifiers. • High-voltage switching applications. • Dynamic focus applications.


    OCR Scan     		PDF 1800E 2SC3675 2010C T0220AB 8-9202/4237AT/3195KI

    High-Voltage Amplifiers

    Abstract: 2SC3676 SC46 T0220AB
    Text: Ordering num ber:EN 1801E 2SC3676 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications Applications • High-voltage amplifiers. •High-voltage switching applications. • Dynamic focus applications. Features


    OCR Scan     		PDF 1801E 2SC3676 High-Voltage Amplifiers SC46 T0220AB