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    HIGH SPEED DOUBLE DRAIN MOSFET Search Results

    HIGH SPEED DOUBLE DRAIN MOSFET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    SSM10N961L Toshiba Electronic Devices & Storage Corporation N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501 Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    HIGH SPEED DOUBLE DRAIN MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MYXM21200-20GAB

    Abstract: silicon carbide
    Text: SiC Power MOSFET Double 1200 Volt 20 Amp Hermetic MYXM21200-20GAB Product Overview Features y r a in Benefits • High speed switching with low capacitance • Two devices in one hermetic package. • High blocking voltage with low RDS on • High voltage 1200V isolation in a small package


    Original     		PDF MYXM21200-20GAB 210OC O-259 Double1200 MYXM21200-20GAB silicon carbide

    sc1142

    Abstract: IR7811 SC1142CSW surface mount A106 diode SC1142-1205 diode b81 a113 FET SANYO 1000uF 16V CA B20 bridge rectifier B40 B2 RECTIFIER
    Text: HIGH SPEED SYNCHRONOUS POWER MOSFET DRIVER PRELIMINARY - December 7, 1999 SC1205 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION FEATURES The SC1205 is a cost effective Dual MOSFET Driver designed for switching High and Low side Power


    Original     		PDF SC1205 SC1205 3000pF MS-012AA ECN99-742 sc1142 IR7811 SC1142CSW surface mount A106 diode SC1142-1205 diode b81 a113 FET SANYO 1000uF 16V CA B20 bridge rectifier B40 B2 RECTIFIER

    Untitled

    Abstract: No abstract text available
    Text: Power MOSFET Construction and Characteristics Power MOSFET in Detail 2. Construction and Characteristics Since Power MOSFETs operate principally as majority carrier devices, adverse influences are relatively small magnitude or importance. This is in contrast to the situation with minority carrier


    Original     		PDF

    ir703

    Abstract: IR7811 1N5819 30BQ015 SC1405 SC1405TS FDP6035 fet c42
    Text: HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER March 14, 2000 SC1405 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION The SC1405 is a Dual-MOSFET Driver with an internal Overlap Protection Circuit to prevent shoot-through from VIN to GND in the main switching and synchronous MOSFET’s. Each driver is capable of driving


    Original     		PDF SC1405 SC1405 3000pF IR7811, IR7030 TSSOP-14 ir703 IR7811 1N5819 30BQ015 SC1405TS FDP6035 fet c42

    ir703

    Abstract: SC1405 1N5819 30BQ015 SC1405TS IR7030 IR7811
    Text: HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER August 26, 1999 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION The SC1405 is a Dual-MOSFET Driver with an internal Overlap Protection Circuit to prevent shoot-through from VIN to GND in the main switching and synchronous MOSFET’s. Each driver is capable of driving


    Original     		PDF SC1405 3000pF SC1405 IR7811, IR7030 TSSOP-14 ir703 1N5819 30BQ015 SC1405TS IR7811

    SANYO 1000uF 16V CA

    Abstract: high power fet amplifier schematic IR7811 SANYO 1000uF 35V FDB7030 AC Motor Speed Controller capacitor 10u 16v capacitor 1u 16v sanyo capacitor 1000uf 25v SC1405
    Text: HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER August 31, 2000 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION The SC1405 is a Dual-MOSFET Driver with an internal Overlap Protection Circuit to prevent shoot-through from VIN to GND in the main switching and synchronous MOSFET’s. Each driver is capable of driving


    Original     		PDF SC1405 3000pF SC1405 IR7811, IR7030 TSSOP-14 ECN00-1259 SANYO 1000uF 16V CA high power fet amplifier schematic IR7811 SANYO 1000uF 35V FDB7030 AC Motor Speed Controller capacitor 10u 16v capacitor 1u 16v sanyo capacitor 1000uf 25v

    sc1142

    Abstract: sanyo a75 amplifier IR7811 a106 diode SC1142CSW surface mount A106 diode B85 diode A107 capacitor B91 02 diode A116 diode
    Text: HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER December 16, 1999 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION The SC1405B is a Dual-MOSFET Driver with an internal Overlap Protection Circuit to prevent shoot-through from VIN to GND in the main switching and synchronous MOSFET’s. Each driver is capable of driving


    Original     		PDF SC1405B SC1405B 3000pF IR7811 FDB7030 TSSOP-14 ECN99-773 sc1142 sanyo a75 amplifier a106 diode SC1142CSW surface mount A106 diode B85 diode A107 capacitor B91 02 diode A116 diode

    sc1142

    Abstract: a106 diode B118 Mos-fet a106 capacitor surface mount A106 diode B85 diode sanyo a75 amplifier MOSFET A13 IR7811 PIN112
    Text: HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER March 14, 2000 SC1405B TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION The SC1405B is a Dual-MOSFET Driver with an internal Overlap Protection Circuit to prevent shoot-through from VIN to GND in the main switching and synchronous MOSFET’s. Each driver is capable of driving


    Original     		PDF SC1405B SC1405B 3000pF IR7811 FDB7030 TSSOP-14 ECN00-924 sc1142 a106 diode B118 Mos-fet a106 capacitor surface mount A106 diode B85 diode sanyo a75 amplifier MOSFET A13 IR7811 PIN112

    Untitled

    Abstract: No abstract text available
    Text: BUZ900D BUZ901D MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 1.50 Typ. Ø 20 M ax. 16.9 ± 0.15 39.0 ± 1.1 30.2 ± 0.15 10.90 ± 0.1 2 11.60 ± 0.3 Ø 1.0 25.0 N–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING


    Original     		PDF BUZ900D BUZ901D BUZ905D BUZ906D

    7030BL

    Abstract: 300 Volt mosfet schematic circuit 1205S 1N4148 LL42 SC1205 SC1205CS high speed mosfet driver Class-D DOUBLE FET
    Text: SC1205 High Speed Synchronous Power MOSFET Driver POWER MANAGEMENT Description Features K Fast rise and fall times 15ns typical with 3000pf The SC1205 is a cost effective Dual MOSFET Driver designed for switching High and Low side Power MOSFETs. Each driver is capable of driving a 3000pF load in 20ns


    Original     		PDF SC1205 3000pf SC1205 3000pF 7030BL 300 Volt mosfet schematic circuit 1205S 1N4148 LL42 SC1205CS high speed mosfet driver Class-D DOUBLE FET

    7030BL

    Abstract: fb 4710 1205S 1N4148 LL42 SC1205 SC1205CS
    Text: SC1205 High Speed Synchronous Power MOSFET Driver POWER MANAGEMENT Description Features K Fast rise and fall times 15ns typical with 3000pf The SC1205 is a cost effective Dual MOSFET Driver designed for switching High and Low side Power MOSFETs. Each driver is capable of driving a 3000pF load in 20ns


    Original     		PDF SC1205 3000pf SC1205 3000pF 7030BL fb 4710 1205S 1N4148 LL42 SC1205CS

    buz901dp

    Abstract: No abstract text available
    Text: BUZ900DP BUZ901DP MAGNA TEC MECHANICAL DATA Dimensions in mm 20.0 N–CHANNEL POWER MOSFET 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 • HIGH SPEED SWITCHING 2.0 2.0 • N–CHANNEL POWER MOSFET 1.0 • SEMEFAB DESIGNED AND DIFFUSED


    Original     		PDF BUZ900DP BUZ901DP BUZ905DP BUZ906DP buz901dp

    Untitled

    Abstract: No abstract text available
    Text: BUZ905DP BUZ906DP MAGNA TEC MECHANICAL DATA Dimensions in mm 20.0 P–CHANNEL POWER MOSFET 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 • HIGH SPEED SWITCHING 2.0 2.0 • P–CHANNEL POWER MOSFET 1.0 • SEMEFAB DESIGNED AND DIFFUSED


    Original     		PDF BUZ905DP BUZ906DP BUZ900DP BUZ901DP

    Untitled

    Abstract: No abstract text available
    Text: bOE » • 0133107 00ÜD53b SEMELAB PLC TOT ■ S f l L B prpr M A G N A TEC BUZ 9 00 P NEW PRODUCT b u z s g ip SILICON IM-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICATION FEATURES • • •


    OCR Scan     		PDF BUZ905P BUZ906P O-247

    HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET

    Abstract: 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D
    Text: M A G IMA r^ T E C BUZ 900D BUZ 9 0 1 D NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SW ITCHING N - CHANNEL POWER MOSFET SEMEFAB DESIG NED AND DIFFUSED


    OCR Scan     		PDF BUZ905D BUZ906D -100mA -160V -200V HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D

    sc1142

    Abstract: r14 diode ppy vy 5 fet C33C34 shottkey schematic diagram 3 phase ac drive high speed TTL in fet SC1405 SC1405B SC1405TS
    Text: 3 E |W |T E C H JPy ^ December 16, 1999 HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER SC1405B TEL805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION FEATURES The SC1405B is a Dual-MOSFET Driver with an inter­ nal Overlap Protection Circuit to prevent shoot-through


    OCR Scan     		PDF SC1405B TEL805-498-2111 SC1405B 3000pF TSSOP-14 M0-153AB1 ECN99-773 sc1142 r14 diode ppy vy 5 fet C33C34 shottkey schematic diagram 3 phase ac drive high speed TTL in fet SC1405 SC1405TS

    BUZ MOSFET

    Abstract: No abstract text available
    Text: bOE D 3133107 SEMELAB PLC G0GDS42 2G3 • SMLB - " T S f l - Z 5 r r MAGNA TEC BUZ 905D BUZ 906D NEW PRODUCT SILICON P-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SWITCHING


    OCR Scan     		PDF G0GDS42 BUZ900D BUZ901D BUZ905D BUZ906D BUZ MOSFET

    Untitled

    Abstract: No abstract text available
    Text: bQE D • 01331Ô7 GGGDSMS - T12 ■ - SEMELAB PLC SIILB ^ r -3 ° i-^ 3 prpr M AGNA r^ tec BUZ 905P BUZ 90BP NEW PRODUCT SILICON P-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY,


    OCR Scan     		PDF BUZ900P BUZ901P

    Untitled

    Abstract: No abstract text available
    Text: BUZ900DP BUZ901DP M ECHANICAL DATA Dimensions in mm N-CHANNEL POWER MOSFET 5 .C POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V) • HIGH ENERGY RATING


    OCR Scan     		PDF BUZ900DP BUZ901DP BUZ905DP BUZ906DP BUZ900DP

    n-channel 250w power mosfet

    Abstract: No abstract text available
    Text: BUZ900D BUZ901D IVI A CB INI A M ECHANICAL DATA N-CHANNEL POWER MOSFET Dimensions in mm POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V • HIGH ENERGY RATING


    OCR Scan     		PDF BUZ900D BUZ901D BUZ905D BUZ906D BUZ900D n-channel 250w power mosfet

    Untitled

    Abstract: No abstract text available
    Text: bDE D • 0133107 Q000533 ETG ■■ SULB SEMELAB PLC p rp r ''T'3cM S M A G IMA r^ tec BUZ 9 0 0 D b u z s o id NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICA TION FEATURES


    OCR Scan     		PDF Q000533 BUZ905D BUZ906D 300jiS BUZ900D BUZ901D

    BUZ905D

    Abstract: No abstract text available
    Text: BUZ905D BUZ906D IVI A CB INI A MECHANICAL DATA Dimensions in mm P-CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V • HIGH ENERGY RATING


    OCR Scan     		PDF BUZ905D BUZ906D BUZ900D BUZ901D

    buz906dp

    Abstract: No abstract text available
    Text: BUZ905DP BUZ906DP M ECHANICAL DATA Dimensions in mm P-CHANNEL POWER MOSFET 5 .C POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V) • HIGH ENERGY RATING


    OCR Scan     		PDF BUZ905DP BUZ906DP BUZ900DP BUZ901DP buz906dp

    Untitled

    Abstract: No abstract text available
    Text: H S s E IV IT E C H Wa Today’sResults.tom orrow's Visio August 26, 1999 SC1405 high speed syn c h r o n o u s po w er MOSFET SMART DRIVER T E L805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.com DESCRIPTION FEATURES The SC1405 is a Dual-MOSFET Driver with an internal


    OCR Scan     		PDF SC1405 L805-498-2111 SC1405 3000pF TSSOP-14