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    HIGH POWER TRANSISTOR MOSFET Search Results

    HIGH POWER TRANSISTOR MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    HIGH POWER TRANSISTOR MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    rd15hvf

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W DESCRIPTION OUTLINE RD15HVF1 is a MOS FET type transistor specifically DRAWING 1.3+/-0.4 3.2+/-0.4 9.1+/-0.7 FEATURES 12.3MIN High power and High Gain:


    Original     		RD15HVF1 175MHz520MHz RD15HVF1 175MHz 520MHz rd15hvf PDF

    rd15hvf

    Abstract: RF Transistor s-parameter 30W RD15HVF1 transistor d 1302
    Text: < Silicon RF Power MOS FET Discrete > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W DESCRIPTION OUTLINE RD15HVF1 is a MOS FET type transistor specifically DRAWING 1.3+/-0.4 3.2+/-0.4 9.1+/-0.7 FEATURES 12.3MIN High power and High Gain:


    Original     		RD15HVF1 175MHz520MHz RD15HVF1 175MHz 520MHz Oct2011 rd15hvf RF Transistor s-parameter 30W transistor d 1302 PDF

    diode marking SJ

    Abstract: JESD22
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPW65R070C6 Data Sheet Rev. 2.0, 2011-03-15 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPW65R070C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,


    Original     		IPW65R070C6 diode marking SJ JESD22 PDF

    65C6070

    Abstract: infineon MOSFET parameter test diode marking SJ 65C6 ipw65r
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPW65R070C6 Data Sheet Rev. 2.0, 2011-03-15 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPW65R070C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,


    Original     		IPW65R070C6 726-IPW65R070C6 65C6070 infineon MOSFET parameter test diode marking SJ 65C6 ipw65r PDF

    6r041c6

    Abstract: IPW60R041C6 ipw60r041 6r041c6 mosfet data 6R041 JESD22 if444 TO-247-3
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPW60R041C6 Data Sheet Rev. 2.1, 2010-07-12 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPW60R041C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,


    Original     		IPW60R041C6 6r041c6 IPW60R041C6 ipw60r041 6r041c6 mosfet data 6R041 JESD22 if444 TO-247-3 PDF

    6r3k3c6

    Abstract: transistor SMD MARKING CODE 772 IPD60R3K3C6 TRANSISTOR SMD MARKING CODE 42 JESD22
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPD60R3K3C6 Data Sheet Rev. 2.0, 2010-07-21 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R3K3C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,


    Original     		IPD60R3K3C6 6r3k3c6 transistor SMD MARKING CODE 772 IPD60R3K3C6 TRANSISTOR SMD MARKING CODE 42 JESD22 PDF

    6R070C6

    Abstract: 6R070C6 MOSFET TRANSISTOR IPW60R070C6 infineon MOSFET parameter test c6 transistor JESD22
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPW60R070C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPW60R070C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,


    Original     		IPW60R070C6 6R070C6 6R070C6 MOSFET TRANSISTOR IPW60R070C6 infineon MOSFET parameter test c6 transistor JESD22 PDF

    65F6080

    Abstract: No abstract text available
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD 650V CoolMOS CFD Power Transistor IPW65R080CFD Data Sheet Rev. 2.0, 2011-02-02 Final Industrial & Multimarket 650V CoolMOS™ CFD Power Transistor 1 IPW65R080CFD Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,


    Original     		IPW65R080CFD 65F6080 PDF

    6r1k4c6

    Abstract: IPD60R1K4C6 smd diode EG - 413 Diode SMD SJ 94 Diode SMD SJ 98 JESD22 MOSFET TRANSISTOR SMD MARKING CODE 11
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPD60R1K4C6 Data Sheet Rev. 2.0, 2010-07-19 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R1K4C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,


    Original     		IPD60R1K4C6 6r1k4c6 IPD60R1K4C6 smd diode EG - 413 Diode SMD SJ 94 Diode SMD SJ 98 JESD22 MOSFET TRANSISTOR SMD MARKING CODE 11 PDF

    65F6080

    Abstract: ipw65r080
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD 650V CoolMOS CFD Power Transistor IPW65R080CFD Data Sheet Rev. 2.0, 2011-02-02 Final Industrial & Multimarket 650V CoolMOS™ CFD Power Transistor 1 IPW65R080CFD Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,


    Original     		IPW65R080CFD 65F6080 ipw65r080 PDF

    65F6080

    Abstract: ipw65r080 IPW65R080CFD 65F608 coolmos cfd ipw65r
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD 650V CoolMOS CFD Power Transistor IPW65R080CFD Data Sheet Rev. 2.0, 2011-02-02 Final Industrial & Multimarket 650V CoolMOS™ CFD Power Transistor 1 IPW65R080CFD Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,


    Original     		IPW65R080CFD 65F6080 ipw65r080 IPW65R080CFD 65F608 coolmos cfd ipw65r PDF

    6r2k0c6

    Abstract: IPD60R2K0C6 g1 TRANSISTOR SMD MARKING CODE JESD22
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPD60R2K0C6 Data Sheet Rev. 2.0, 2010-07-20 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R2K0C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,


    Original     		IPD60R2K0C6 6r2k0c6 IPD60R2K0C6 g1 TRANSISTOR SMD MARKING CODE JESD22 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPW65R070C6 Data Sheet Rev. 2.0, 2011-03-15 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPW65R070C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,


    Original     		IPW65R070C6 PDF

    Transistor C G 774 6-1

    Abstract: 100OHM RD45HMF1 Transistor C 1279
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD45HMF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers


    Original     		RD45HMF1 900MHz RD45HMF1 900MHz-band 900MHz 800-900MHz RD45HMF1-101 Transistor C G 774 6-1 100OHM Transistor C 1279 PDF

    RD70HHF

    Abstract: RD70HHF1 mosfet HF amplifier idq10
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD70HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,70W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.


    Original     		RD70HHF1 30MHz RD70HHF1 30MHz RD70HHF1-101 RD70HHF mosfet HF amplifier idq10 PDF

    RD15HVF1

    Abstract: RD15HVF1-101 100OHM RF Transistor s-parameter vhf transistor D 1557
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE DESCRIPTION RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica


    Original     		RD15HVF1 175MHz520MHz RD15HVF1 175MHz 520MHz RD15HVF1-101 100OHM RF Transistor s-parameter vhf transistor D 1557 PDF

    RD70HVF1-101

    Abstract: RD70HVF1 RD70HVF 70w power amplifier rd70hvf1 60W VHF circuit RF amplifier
    Text: < Silicon RF Power MOS FET Discrete > RD70HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers DRAWING 25.0+/-0.3 applications.


    Original     		RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz Oct2011 RD70HVF1-101 RD70HVF 70w power amplifier rd70hvf1 60W VHF circuit RF amplifier PDF

    RD70HVF

    Abstract: rd70 RD70HVF1 RD70HVF1-101 100OHM 071J 1695 GP 1
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers


    Original     		RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz 520MHz RD70HVF rd70 RD70HVF1-101 100OHM 071J 1695 GP 1 PDF

    RD15HVF1

    Abstract: rd15hvf RD15HV 175mhz gp 845 100OHM mitsubishi rf RD15HVF1 UHF POWER mosfet 3w
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz15W 520MHz,15W DESCRIPTION OUTLINE RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica


    Original     		RD15HVF1 175MHz15W 520MHz RD15HVF1 175MHz 520MHz rd15hvf RD15HV 175mhz gp 845 100OHM mitsubishi rf RD15HVF1 UHF POWER mosfet 3w PDF

    RD70HVF

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD70HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers DRAWING 25.0+/-0.3 applications.


    Original     		RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz 520MHz RD70HVF PDF

    RD60HUF1

    Abstract: 100OHM ZO-10 Rf power transistor mosfet
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.


    Original     		RD60HUF1 520MHz RD60HUF1 520MHz 100OHM ZO-10 Rf power transistor mosfet PDF

    100OHM

    Abstract: RD45HMF1 TRANSISTOR HANDLING 2A A 107 transistor
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD45HMF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers


    Original     		RD45HMF1 900MHz RD45HMF1 900MHz-band 900MHz 800-900MHz 100OHM TRANSISTOR HANDLING 2A A 107 transistor PDF

    RD100HHF1

    Abstract: TRANSISTOR D 1765 304 fet transistor TRANSISTOR D 1765 720 100w RD100HHF1 hf amplifier 100w hf power transistor mosfet mosfet HF amplifier 68 0154 rf amplifier 100w
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.


    Original     		RD100HHF1 30MHz RD100HHF1 30MHz TRANSISTOR D 1765 304 fet transistor TRANSISTOR D 1765 720 100w RD100HHF1 hf amplifier 100w hf power transistor mosfet mosfet HF amplifier 68 0154 rf amplifier 100w PDF

    RD60HUF1-101

    Abstract: Rf power transistor mosfet UHF transistor FET 100OHM RD60HUF1 PINw10 transistor A 1568 mitsubishi 250
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.


    Original     		RD60HUF1 520MHz RD60HUF1 520MHz RD60HUF1-101 RD60HUF1-101 Rf power transistor mosfet UHF transistor FET 100OHM PINw10 transistor A 1568 mitsubishi 250 PDF