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    HIGH POWER FET TRANSISTOR Search Results

    HIGH POWER FET TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    HIGH POWER FET TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra ILD1011M30 TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability  Gold Metal The high power transistor part number ILD1011M30 is designed for Avionics systems operating at 1030-1090 MHz. This LDMOS FET device


    Original     		PDF ILD1011M30 ILD1011M30 ILD1011M30-REV-NC-DS-REV-B

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra ILD1011M15 TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability  Gold Metal The high power transistor part number ILD1011M15 is designed for Avionics systems operating at 1030-1090 MHz. This LDMOS FET device


    Original     		PDF ILD1011M15 ILD1011M15 ILD1011M15-REV-NC-DS-REV-B

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra ILD1214M10 Preliminary TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability  Gold Metal The high power transistor part number ILD1214M10 is designed for LBand radar operating at 1200-1400 MHz. This LDMOS FET device under


    Original     		PDF ILD1214M10 ILD1214M10 300us, 300us-10% ILD1214M10-REV-PR1-DS-REV-B

    AN569

    Abstract: MTP1306
    Text: MOTOROLA Order this document by MTP1306/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP1306 HDTMOS E-FET. High Density Power FET N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES 30 VOLTS RDS on = 0.0065 OHM This advanced high–cell density HDTMOS power FET is


    Original     		PDF MTP1306/D MTP1306 AN569 MTP1306

    IL062

    Abstract: IL062N TL062C IL062D il0621
    Text: TECHNICAL DATA IL062 Low Power J-FET DUAL OPERATIONAL AMPLIFIERS The IL062 is high speed J-FET input dual operational amplifier. This J-FET input operational amplifier incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.


    Original     		PDF IL062 IL062 012AA) IL062N TL062C IL062D il0621

    il0621

    Abstract: IL062 TL062C IL062N IL062D
    Text: TECHNICAL DATA IL062 Low Power J-FET DUAL OPERATIONAL AMPLIFIERS The IL062 is high speed J-FET input dual operational amplifier. This J-FET input operational amplifier incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.


    Original     		PDF IL062 IL062 012AA) il0621 TL062C IL062N IL062D

    AN569

    Abstract: MTP12N06EZL mosfet transistor 400 volts.100 amperes
    Text: MOTOROLA Order this document by MTP12N06EZL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP12N06EZL N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.180 OHM This advanced TMOS power FET is designed to withstand high


    Original     		PDF MTP12N06EZL/D MTP12N06EZL MTP12N06EZL/D* AN569 MTP12N06EZL mosfet transistor 400 volts.100 amperes

    2sc5922

    Abstract: 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982
    Text: -Transistors ◆MOS FET Series ◆Low Vce sat Super-mini Transistors Series ◆Strong Discharge Voltage/ High Speed Switching Transistors Series ◆Muting Transistors Series MOS FET Series Power MOS FET Series Series Features Low RDs(on) High ESD capability


    Original     		PDF 200mW 500mW 15Min. 85Max. 15Max. 2sc5922 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982

    rd15hvf

    Abstract: RF Transistor s-parameter 30W RD15HVF1 transistor d 1302
    Text: < Silicon RF Power MOS FET Discrete > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W DESCRIPTION OUTLINE RD15HVF1 is a MOS FET type transistor specifically DRAWING 1.3+/-0.4 3.2+/-0.4 9.1+/-0.7 FEATURES 12.3MIN High power and High Gain:


    Original     		PDF RD15HVF1 175MHz520MHz RD15HVF1 175MHz 520MHz Oct2011 rd15hvf RF Transistor s-parameter 30W transistor d 1302

    rd15hvf

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W DESCRIPTION OUTLINE RD15HVF1 is a MOS FET type transistor specifically DRAWING 1.3+/-0.4 3.2+/-0.4 9.1+/-0.7 FEATURES 12.3MIN High power and High Gain:


    Original     		PDF RD15HVF1 175MHz520MHz RD15HVF1 175MHz 520MHz rd15hvf

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra ILD0912M400HV TECHNOLOGIES, INC. Avionics TACAN RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD0912M400HV is designed for Avionics TACAN systems operating at 960-1215MHz.


    Original     		PDF ILD0912M400HV ILD0912M400HV 960-1215MHz. ILD0912M400HV-REV-NC-DS-REV-A

    TL062

    Abstract: No abstract text available
    Text: UTC TL062 LINEAR INTEGRATED CIRCUIT LOW POWER DUAL J-FET OPERATIONAL AMPLIFIER DESCRIPTION The TL062 is a high speed J-FET input dual operational amplifier. It incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit. The device features high


    Original     		PDF TL062 TL062 QW-R105-003

    TL062

    Abstract: TL062AC TL062BC tl062 equivalent
    Text: UTC TL062 LINEAR INTEGRATED CIRCUIT LOW POWER DUAL J-FET OPERATIONAL AMPLIFIER DESCRIPTION The TL062 is a high speed J-FET input dual operational amplifier. It incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit. The device features high


    Original     		PDF TL062 TL062 QW-R105-003 TL062AC TL062BC tl062 equivalent

    ILD1011M160HV

    Abstract: No abstract text available
    Text: Part Number: Integra ILD1011M160HV TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M160HV is designed for Avionics systems operating at 1030-1090 MHz. Operating at


    Original     		PDF ILD1011M160HV ILD1011M160HV ILD1011M160HV-REV-NC-DS-REV-B

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra ILD1011M280HV Preliminary TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M280HV is designed for Avionics systems operating at 1030-1090 MHz. Operating at


    Original     		PDF ILD1011M280HV ILD1011M280HV ILD1011M280HV-REV-PR1-DS-REV-B

    Untitled

    Abstract: No abstract text available
    Text: Part Number: ILD1011M450HV Preliminary Integra TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET − High Power Gain − Superior thermal stability The high power transistor part number ILD1011M450HV is designed for Avionics systems operating at 1030-1090 MHz. Operating at


    Original     		PDF ILD1011M450HV ILD1011M450HV ILD1011M450HV-REV-PR1-DS-REV-A

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra ILD0912M15HV TECHNOLOGIES, INC. Avionics TACAN RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD0912M15HV is designed for Avionics TACAN systems operating at 960-1215 MHz. Operating at


    Original     		PDF ILD0912M15HV ILD0912M15HV ILD0912M15HV-REV-NC-DS-REV-NC

    IRF540 motorola

    Abstract: irf540 for pwm IRF540 application irf540 "27 MHz" IRF540 u c transistor irf540 27 MHz mosfet transistor 400 volts.100 amperes
    Text: MOTOROLA Order this document by IRF540/D SEMICONDUCTOR TECHNICAL DATA Product Preview IRF540 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 27 AMPERES 100 VOLTS RDS on = 0.070 OHMS This advanced TMOS power FET is designed to withstand high


    Original     		PDF IRF540/D IRF540 IRF540 motorola irf540 for pwm IRF540 application irf540 "27 MHz" IRF540 u c transistor irf540 27 MHz mosfet transistor 400 volts.100 amperes

    2SK2973

    Abstract: 165082 mf 102 fet equivalent hd 9729 transistor t 2190 GR40-220 ic 7448 marking c7 sot-89 75458 88284
    Text: MITSUBISHI RF POWER MOS FET 2SK2973 SILICON MOS FET TYPE DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. FEATURES * High power gain:Gpe>13dB « VDD=9.6V,f=450MHz,Pin= 17dBm * High efficiency:55% typ.


    OCR Scan     		PDF 2SK2973 2SK2973 450MHz 17dBm OT-89 OT-89 Conditi38 165082 mf 102 fet equivalent hd 9729 transistor t 2190 GR40-220 ic 7448 marking c7 sot-89 75458 88284

    093.216

    Abstract: 2sk2974 093.941 transistor 2sk2974
    Text: MITSUBISHI RF POWER MOS FET 2SK2974 SILICON MOS FET TYPE DESCRIPTION OUTLINE DRAWING Dimensions in mm 2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. INDEX MARK BOTTOM (TOP) FEATURES • High power gain:Gpe>8.4dB


    OCR Scan     		PDF 2SK2974 2SK2974 450MHz 30dBm 600mA 093.216 093.941 transistor 2sk2974

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTP12N06EZL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E-FET ™ High Energy Power FET MTP12N06EZL N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = °-180 OHM This advanced TMOS power FET is designed to withstand high


    OCR Scan     		PDF MTP12N06EZL/D MTP12N06EZL 21A-06,

    hd 9729

    Abstract: 2SK2973 45980 78268 75458 75182 0L sot-89 944 SOT-89
    Text: MITSUBISHI RF POWER MOS FET 2SK2973 SILICON MOS FET TYPE DESCRIPTION 2SK2973 ¡s a MOS FET type transistor specifically designed for OUTLINE DRAWING Dimensions in mm VHF/UHF power amplifiers applications. 1.5±0.1 FEATURES • High power gain:Gpe^13dB @ VDD-9.6V ,f"450MHz, Pin=17dBm


    OCR Scan     		PDF 2SK2973 450MHz, 17dBm OT-89 OT-89 hd 9729 2SK2973 45980 78268 75458 75182 0L sot-89 944 SOT-89

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTP75N06HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP75N06HD HDTMOS E-FET™ High Density Power FET Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 75 AMPERES This advanced high-cell density HDTMOS E-FET is designed to


    OCR Scan     		PDF MTP75N06HD/D MTP75N06HD

    bi 370 transistor e

    Abstract: bi 370 transistor
    Text: MOTOROLA Order this document by MTP1302/D SEMICONDUCTOR TECHNICAL DATA Advance Information HDTMOS E-FET High Density Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 42 AMPERES 30 VOLTS RDS on = 22 mQ T his advanced high cell d ensity HDTM OS pow er FET is


    OCR Scan     		PDF MTP1302/D bi 370 transistor e bi 370 transistor