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    HIGH GAIN LOW VOLTAGE PNP TRANSISTOR Search Results

    HIGH GAIN LOW VOLTAGE PNP TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    HIGH GAIN LOW VOLTAGE PNP TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    germanium Power Transistor

    Abstract: pnp germanium transistor germanium transistor pnp NTE27 GERMANIUM TRANSISTOR Germanium power
    Text: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high-gain and low saturation voltages. Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V


    Original     		PDF NTE27 NTE27 germanium Power Transistor pnp germanium transistor germanium transistor pnp GERMANIUM TRANSISTOR Germanium power

    Untitled

    Abstract: No abstract text available
    Text: PNP small signal transistor BCX17 Small load switch transistor with high gain and Low saturation voltage. Features 1 High gain and low saturation voltage. (2) Ideal for small load switching applications. Complements the BCX19 Dimensions (Unit : mm)


    Original     		PDF BCX17 BCX17 R1120A

    Untitled

    Abstract: No abstract text available
    Text: PNP small signal transistor BCX17 Small load switch transistor with high gain and Low saturation voltage. Features 1 High gain and low saturation voltage. (2) Ideal for small load switching applications. Complements the BCX19 Dimensions (Unit : mm)


    Original     		PDF BCX17 BCX17 R1120A

    BCX17

    Abstract: BCX19 T116
    Text: BCX17 Transistors PNP small signal transistor BCX17 Small load switch transistor with high gain and Low saturation voltage. zFeatures 1 High gain and low saturation voltage. 2) Ideal for small load switching applications. 3) Complements the BCX19. zDimensions Unit : mm)


    Original     		PDF BCX17 BCX19. BCX17 BCX19 T116

    MJE210

    Abstract: transistor case To 106 transistor C 834
    Text: MJE210 SILICON PNP TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain aydio amplifier applications.


    Original     		PDF MJE210 MJE210 OT-32 OT-32 transistor case To 106 transistor C 834

    Untitled

    Abstract: No abstract text available
    Text: 2STR2215 LOW VOLTAGE FAST-SWITCHING HIGH GAIN PNP POWER TRANSISTOR Features • VERY LOW COLLECTOR-EMITTER SATURATION VOLTAGE ■ HIGH CURRENT GAIN CHARACTERISTIC ■ FAST-SWITCHING SPEED ■ IN COMPLIANCE WITH THE 2002/93/EC EUROPEAN DIRECTIVE ■ MINIATURE SOT-23 PLASTIC PACKAGE


    Original     		PDF 2STR2215 2002/93/EC OT-23 OT-23 2STR2215 2STR1215

    Transistor 834

    Abstract: MJE210 TRANSISTOR B 834
    Text: MJE210 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon Epitaxial-Base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain audio amplifier applications.


    Original     		PDF MJE210 MJE210 OT-32 OT-32 Transistor 834 TRANSISTOR B 834

    MJE210

    Abstract: TRANSISTOR B 834 Transistor 834
    Text: MJE210 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon Epitaxial-Base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain audio amplifier applications.


    Original     		PDF MJE210 MJE210 OT-32 OT-32 TRANSISTOR B 834 Transistor 834

    MJE210

    Abstract: TRANSISTOR B 834 Transistor 834 B 834 Y
    Text: MJE210 SILICON PNP TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain aydio amplifier applications.


    Original     		PDF MJE210 MJE210 OT-32 OT-32 TRANSISTOR B 834 Transistor 834 B 834 Y

    Untitled

    Abstract: No abstract text available
    Text: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE *Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA


    Original     		PDF MJD210 500mA QW-R213-001

    TRANSISTOR b100

    Abstract: diode r207 UP1868
    Text: UNISONIC TECHNOLOGIES CO., LTD UP1868 PNP SILICON TRANSISTOR LOW SATURATION VOLTAGE PNP POWER TRANSISTOR FEATURES * Low saturation voltage with equivalent on-resistance be RCE SAT about 40mΩ at 5A) * High gain that can be replace parts for power MOSFET.


    Original     		PDF UP1868 OT-223 UP1868L UP1868-AA3-R UP1868L-AA3-R QW-R207-015 TRANSISTOR b100 diode r207 UP1868

    Untitled

    Abstract: No abstract text available
    Text: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE *Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA


    Original     		PDF MJD210 500mA QW-R213-001

    UP1868

    Abstract: UP1868-AA3-F-R UP1868L-AA3-F-R
    Text: UNISONIC TECHNOLOGIES CO., LTD UP1868 PNP SILICON TRANSISTOR LOW SATURATION VOLTAGE PNP POWER TRANSISTOR „ FEATURES * Low saturation voltage with equivalent on-resistance be RCE SAT about 40mΩ at 5A) * High gain that can be replace parts for power MOSFET.


    Original     		PDF UP1868 UP1868L UP1868-AA3-F-R UP1868L-AA3-F-R OT-223 QW-R207-015 UP1868 UP1868-AA3-F-R UP1868L-AA3-F-R

    germanium Power Transistor

    Abstract: Vcb-60V NTE27 Germanium power
    Text: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high–gain and low saturation voltages. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V


    Original     		PDF NTE27 NTE27 germanium Power Transistor Vcb-60V Germanium power

    2STX2220

    Abstract: JESD97 X2220
    Text: 2STX2220 High Gain Low Voltage PNP Power Transistor General features • Very low Collector to Emitter saturation voltage ■ D.C. Current gain, hFE >100 ■ 1.5 A continuous collector current ■ In compliance with the 2002/93/EC European Directive Description


    Original     		PDF 2STX2220 2002/93/EC X2220 2STX2220 JESD97 X2220

    Untitled

    Abstract: No abstract text available
    Text: 2STX2220 High Gain Low Voltage PNP Power Transistor General features • Very low Collector to Emitter saturation voltage ■ D.C. Current gain, hFE >100 ■ 1.5 A continuous collector current ■ In compliance with the 2002/93/EC European Directive s


    Original     		PDF 2STX2220 2002/93/EC

    Untitled

    Abstract: No abstract text available
    Text: 2STX2220 High Gain Low Voltage PNP Power Transistor Preliminary Data General features • Very low Collector to Emitter saturation voltage ■ D.C. Current gain, hFE >100 ■ 1.5 A continuous collector current ■ In compliance with the 2002/93/EC European


    Original     		PDF 2STX2220 2002/93/EC 2STX2220 X2220

    MAT03 op

    Abstract: cascode miller capacitance low noise Microphone Preamplifier
    Text: a FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 ␮V max Low Noise: 1 nV/√Hz @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain Matching: 3% max Excellent Logarithmic Conformance: rBE Ӎ 0.3 ⍀ typ Available in Die Form


    Original     		PDF MAT03 MAT03 MAT03AH MAT03AH/883C MAT03EH MAT03FH MAT03GBC /\\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000831\08302000. MAT03 op cascode miller capacitance low noise Microphone Preamplifier

    MAT03 op

    Abstract: PMD CAPACITOR MAT03 MAT03EH Super matched pair current mirror cascode dual matched PNP Dual Transistors TO-78 mat03ah2 MAT03A
    Text: a FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 ␮V max Low Noise: 1 nV/√Hz @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain Matching: 3% max Excellent Logarithmic Conformance: rBE Ӎ 0.3 ⍀ typ Available in Die Form


    Original     		PDF MAT03 MAT03 MAT03 op PMD CAPACITOR MAT03EH Super matched pair current mirror cascode dual matched PNP Dual Transistors TO-78 mat03ah2 MAT03A

    C3129

    Abstract: MAT03EH MAT03 MAT03A MAT03AH2 MAT03E MAT03F MAT03FH transistor low noise preamp microphone SILICON SMALL-SIGNAL DICE
    Text: a FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 ␮V max Low Noise: 1 nV/√Hz @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain Matching: 3% max Excellent Logarithmic Conformance: rBE Ӎ 0.3 ⍀ typ Available in Die Form


    Original     		PDF MAT03 MAT03 C3129 MAT03EH MAT03A MAT03AH2 MAT03E MAT03F MAT03FH transistor low noise preamp microphone SILICON SMALL-SIGNAL DICE

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES Low Noise, Matched Dual PNP Transistor MAT03 FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 jiV max Low Noise: 1 n V /\ Hz @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain Matching: 3% max Excellent Logarithmic Conformance: rBE — 0.3 i l typ


    OCR Scan     		PDF MAT03

    MAT03

    Abstract: MAT03AH2 MAT03 op MAT03A MAT03E MAT03EH MAT03F MAT03FH
    Text: ► A N ALO G D E V IC E S Low Noise, Matched Dual PNP Transistor MAT03 FEA T U R ES Dual Matched PNP Transistor Low Offset Voltage: 100 jiV max Low Noise: 1 nV/VHz <§> 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain M atching: 3% max


    OCR Scan     		PDF MAT03 MAT03 MAT03AH2 MAT03 op MAT03A MAT03E MAT03EH MAT03F MAT03FH

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON iMm@ignnCTisi«ii Sg¡ MJE210 SILICON PNP TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain


    OCR Scan     		PDF MJE210 MJE210 OT-32 OT-32 O-126)

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 - FEB 94_ FEATURES * 15 Volt V CEO * High gain and low saturation voltage APPLICATIONS * Darlington replacement * * * Flash gun convertors Battery powered ci rcu its


    OCR Scan     		PDF ZTX788B CICI7DS76 GG1D354 117DS7Ã 001G35S