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    HIGH CURRENT SMD TRANSISTOR Search Results

    HIGH CURRENT SMD TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    HIGH CURRENT SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Type SMD Transistors IC Product specification 2SC5069 Features High current capacity. Adoption of MBIT process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating


    Original     		PDF 2SC5069 250mm

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Type SMD Transistors IC Product specification 2SC5212 Features Low collector saturation voltage VCE sat =0.2V typ. High fT fT=180MHz typ. Excellent linearity of dc forward current gain. High collector current ICM=1A. Small package for mounting. Absolute Maximum Ratings Ta = 25


    Original     		PDF 2SC5212 180MHz 100mA 500mA -10mA

    SMD BR 17

    Abstract: SMD BR 2SC3443 2SA1363 smd transistor 2A transistor smd marking SMD BR 42
    Text: Transistors SMD Type High Current Drive Applications 2SA1363 Features High hFE : hFE = 150 to 800 High Collector Current IC = -2A High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3443 Absolute Maximum Ratings Ta = 25 Symbol


    Original     		PDF 2SA1363 500mW 2SC3443 100mA -50mA SMD BR 17 SMD BR 2SC3443 2SA1363 smd transistor 2A transistor smd marking SMD BR 42

    MARKING SMD npn TRANSISTOR 1a

    Abstract: MARKING SMD NPN TRANSISTOR BR transistor smd marking cu 2SC5069 SMD TRANSISTOR 1A NPN VEBO-15V
    Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC5069 Features High current capacity. Adoption of MBIT process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating


    Original     		PDF 2SC5069 250mm MARKING SMD npn TRANSISTOR 1a MARKING SMD NPN TRANSISTOR BR transistor smd marking cu 2SC5069 SMD TRANSISTOR 1A NPN VEBO-15V

    SMD transistor code NC

    Abstract: DIODE smd marking CODE WA TRANSISTOR SMD MARKING CODE transistor SMD MARKING CODE nx smd marking NX transistor smd code marking nc 2n7002 smd SMD Transistor nc TRANSISTOR SMD MARKING CODE PD smd diode 2n7002 marking code
    Text: SMD Signal DMOS Transistor N-Channel 2N7002 SMD Signal DMOS Transistor (N-Channel) Features • • • • • Voltage Controlled Small Signal Switch High Density Cell Design for Low RDS(ON) Rugged and Reliable High Saturation Current Capablity RoHS Compliance


    Original     		PDF 2N7002 OT-23, OT-23 MIL-STD-202G, SMD transistor code NC DIODE smd marking CODE WA TRANSISTOR SMD MARKING CODE transistor SMD MARKING CODE nx smd marking NX transistor smd code marking nc 2n7002 smd SMD Transistor nc TRANSISTOR SMD MARKING CODE PD smd diode 2n7002 marking code

    2SA1945

    Abstract: marking z*d
    Text: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1945 Features High voltage VCEO=-50V High fT: fT=150MHz typ Excellent linearity of DC forward current gain High collector current Icm=600mA Small package for mounting Absolute Maximum Ratings Ta = 25 Parameter


    Original     		PDF 2SA1945 150MHz 600mA -100mA -200mA -10mA 2SA1945 marking z*d

    6a smd transistor

    Abstract: fzt851 npn smd 2a smd transistor 2A smd transistor MARKING 2A npn transistor smd 6a transistor marking 6A smd 6a transistor
    Text: Transistors SMD Type NPN Silicon Planar High Current High Performance Transistor FZT851 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Extremely low equivalent on-resistance; RCE(sat)44mÙ at 5A. +0.1 3.00-0.1 6 Amps continuous current, up to 20 Amps peak current.


    Original     		PDF FZT851 OT-223 300mA 100mA, 50MHz 100mA 6a smd transistor fzt851 npn smd 2a smd transistor 2A smd transistor MARKING 2A npn transistor smd 6a transistor marking 6A smd 6a transistor

    SMD 6b

    Abstract: marking 6a 6B smd marking AF KC817-25 KC817-40 smd marking 6c
    Text: Transistors SMD Type NPN Silicon AF Transistors KC817W Features For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit


    Original     		PDF KC817W KC817-16W KC817-40W KC817-25W SMD 6b marking 6a 6B smd marking AF KC817-25 KC817-40 smd marking 6c

    smd transistor wc

    Abstract: smd marking wd wc smd transistor smd marking wc SMD TRANSISTOR MARKING BR marking wc 2SC5214 smd transistor wc dc
    Text: Transistors SMD Type Small Signal Transistor 2SC5214 Features High fT fT=100MHz typ. Excellent linearity of dc forward current gain. High collector current ICM=1.5A. Small package for mounting. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage


    Original     		PDF 2SC5214 100MHz 500mA -10mA 500mA smd transistor wc smd marking wd wc smd transistor smd marking wc SMD TRANSISTOR MARKING BR marking wc 2SC5214 smd transistor wc dc

    6F SMD

    Abstract: marking AF BC818W KC818 10AIE
    Text: Transistors SMD Type NPN Silicon AF Transistors KC818W BC818W Features For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating


    Original     		PDF KC818W BC818W) KC818-16W KC818-40W KC818-25W 6F SMD marking AF BC818W KC818 10AIE

    ABE smd

    Abstract: SMD BR 2SA1947 marking abc vce 25 icm 1 hFE CLASSIFICATION Marking marking ABE
    Text: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1947 Features High fT: fT=100MHz typ Excellent linearity of DC forward current gain High collector current Icm=-1.5A Small package for mounting Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage


    Original     		PDF 2SA1947 100MHz -500mA -500mA -25mA -10mA ABE smd SMD BR 2SA1947 marking abc vce 25 icm 1 hFE CLASSIFICATION Marking marking ABE

    marking al

    Abstract: 200a smd 2sA1766
    Text: Transistors IC SMD Type PNP Epitaxial Planar Silicon 2SA1766 Features Adoption of FBET, MBIT processes. High DC current gain hFE=500 to 1200 . Large current capacity. Low collector-to-emitter saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25


    Original     		PDF 2SA1766 -10mA -200mA -200A marking al 200a smd 2sA1766

    FZT949

    Abstract: smd transistor 2A 1V100
    Text: Transistors SMD Type PNP Silicon Planar High Current High Performance Transistor FZT949 SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 6.50-0.2 0.1max +0.05 0.90-0.05 Extremely low equivalent on-resistance; RCE(sat). 6 Amps continuous current. +0.1 3.00-0.1 Up to 20 Amps peak current.


    Original     		PDF FZT949 OT-223 -400mA* -250mA* -500mA -10mA, -100mA, 50MHz -400mA FZT949 smd transistor 2A 1V100

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type PNP Silicon Planar High Current High Performance Transistor FZT949 SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 6.50-0.2 0.1max +0.05 0.90-0.05 Extremely low equivalent on-resistance; RCE(sat). 6 Amps continuous current. +0.1 3.00-0.1 Up to 20 Amps peak current.


    Original     		PDF FZT949 OT-223 -400mA* -250mA* -500mA -10mA, -100mA, 50MHz -400mA

    VEBO-15V

    Abstract: 2SC4390 npn smd 2a
    Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4390 Features Adoption of MBIT process. High DC current gain hFE=800 to 3200 . Large current capacity (IC=2A). Low collector-to-emitter saturation voltage (VCE(sat) 0.3V). High VEBO (VEBO 15V).


    Original     		PDF 2SC4390 500mA VEBO-15V 2SC4390 npn smd 2a

    Untitled

    Abstract: No abstract text available
    Text: Transistors Transistors IC SMD SMD Type Type Product specification 2SA1411 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 High VEBO Voltage:VEBO=-10V +0.1 1.3-0.1 +0.1 2.4-0.1 Very high DC current gain:hFE=500 to 1600. 0.4 3 2 +0.1 0.95-0.1 +0.1


    Original     		PDF OT-23 -50mA

    npn smd 2a

    Abstract: FZT869
    Text: Transistors SMD Type NPN Silicon Planar High Current High Performance Transistor FZT869 SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 Extremely low equivalent on-resistance; RCE(sat)44mÙ at 5A. 7 Amp continuous collector current (20 Amp peak).


    Original     		PDF FZT869 OT-223 150mA 300mA 100mA, 50MHz 100mA npn smd 2a FZT869

    2SC5212

    Abstract: marking ue hFE CLASSIFICATION Marking
    Text: Transistors SMD Type Small Signal Transistor 2SC5212 Features Low collector saturation voltage VCE sat =0.2V typ. High fT fT=180MHz typ. Excellent linearity of dc forward current gain. High collector current ICM=1A. Small package for mounting. Absolute Maximum Ratings Ta = 25


    Original     		PDF 2SC5212 180MHz 100mA 500mA -10mA 2SC5212 marking ue hFE CLASSIFICATION Marking

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type NPN Silicon Planar High Current High Performance Transistor FZT849 SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 Extremely low equivalent on-resistance; RCE(sat)36mÙ at 5A. 7 Amp continuous collector current (20 Amp peak).


    Original     		PDF FZT849 OT-223 300mA 100mA, 50MHz 100mA

    marking aae

    Abstract: marking aag smd AAE smd marking AAE 2SA1946 hFE CLASSIFICATION Marking smd ic marking aae
    Text: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1946 Features Low collector saturation voltage VCE sat =-0.25V typ High fT: fT=180MHz typ Excellent linearity of DC forward current gain High collector current Icm=-1A Small package for mounting Absolute Maximum Ratings Ta = 25


    Original     		PDF 2SA1946 180MHz -100mA -500mA -25mA -10mA marking aae marking aag smd AAE smd marking AAE 2SA1946 hFE CLASSIFICATION Marking smd ic marking aae

    FMMT734

    Abstract: smd transistor 5k
    Text: Transistors SMD Type Power Darlington Transistor FMMT734 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Extremely low VCE sat at high current (1A) 0.55 Very high hFE at high current (5A) +0.1 1.3-0.1 +0.1 2.4-0.1 625mW Power Dissipation 0.4 3 2 +0.1


    Original     		PDF FMMT734 OT-23 625mW -10mA, -100mA, -10mA 100MHz -500mA, FMMT734 smd transistor 5k

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification FMMT734 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Extremely low VCE sat at high current (1A) 0.55 Very high hFE at high current (5A) +0.1 1.3-0.1 +0.1 2.4-0.1 625mW Power Dissipation 0.4 3 2 +0.1 0.95-0.1


    Original     		PDF FMMT734 OT-23 625mW -10mA, -100mA, -10mA 100MHz -500mA,

    SMD BR

    Abstract: transistor smd marking 2SA1364 2SC3444
    Text: Transistors SMD Type Low Frequency Power Amplify Applications 2SA1364 Features High Voltage VCEO = -60V High Collector Current IC = -1A High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3444 Absolute Maximum Ratings Ta = 25


    Original     		PDF 2SA1364 500mW 2SC3444 100mA -500mA -25mA SMD BR transistor smd marking 2SA1364 2SC3444

    smd bf

    Abstract: 2SB1123 BF Marking
    Text: Transistors SMD Type High-Current Switching Applications 2SB1123 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Absolute Maximum Ratings Ta = 25 Parameter Symbol


    Original     		PDF 2SB1123 250mm250 -50mA smd bf 2SB1123 BF Marking