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    HIGH CURRENT NANOSECOND PULSED DRIVING Search Results

    HIGH CURRENT NANOSECOND PULSED DRIVING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TLX9188 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, SO6, Automotive Visit Toshiba Electronic Devices & Storage Corporation

    HIGH CURRENT NANOSECOND PULSED DRIVING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    rogowski-coil

    Abstract: No abstract text available
    Text: Rev. 09.01 valid from April 2009 LDP-V 50-100 V3 Driver Module for Pulsed Lasers ! ! ! ! ! ! ! ! Compact OEM-module 3 to 50 A output current < 4 ns rise time Pulse width control via SMC trigger input 12 ns to 10 µs Rep. rates from single shot to 2 MHz Single +15 V supply


    Original     		PDF PLCS-21 PLB-21 rogowski-coil

    lidar

    Abstract: rangefinding
    Text: Rev. 09.01 valid from April 2009 LDP-V 40-70 Ultra-compact Driver Module for Pulsed Lasers ! ! ! ! ! ! ! ! Ultra-compact OEM-module: 32x15mm 8 to 40 A output current < 7 ns rise time Pulse width control via trigger input 15 ns to 1 µs Rep. rates from single shot to 100 kHz


    Original     		PDF 32x15mm lidar rangefinding

    Untitled

    Abstract: No abstract text available
    Text: Rev. 09.02 valid from April 2009 LDP-V 10-70 Ultra-compact Driver Module for Pulsed Lasers ! ! ! ! ! ! ! ! Ultra-compact OEM-module: 32x15mm 2.5 to 13 A output current < 4 ns rise time Pulse width control via trigger input 10 ns to 1 µs Rep. rates from single shot to 100 kHz


    Original     		PDF 32x15mm

    Logic Level N-Channel Power MOSFET

    Abstract: AN7254 AN7260 RFP2N20L TB334
    Text: RFP2N20L Data Sheet July 1999 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET File Number Features • 2A, 200V The RFP2N20L N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as


    Original     		PDF RFP2N20L RFP2N20L Logic Level N-Channel Power MOSFET AN7254 AN7260 TB334

    AN7254

    Abstract: AN7260 RFP8N20L TB334
    Text: RFP8N20L Data Sheet July 1999 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET File Number Features • 8A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as


    Original     		PDF RFP8N20L AN7254 AN7260 RFP8N20L TB334

    2N6902

    Abstract: No abstract text available
    Text: 2N6902 S E M I C O N D U C T O R 12A, 100V, 0.200 Ohm, N-Channel Logic Level Power MOSFET September 1997 Features Description • 12A, 100V The 2N6902 is an N-Channel enhancement mode silicon gate power MOS field effect transistor specifically designed for use with logic level 5V driving sources in applications


    Original     		PDF 2N6902 2N6902 ISO9000

    F12N10L

    Abstract: f12n10 TA09526 Logic Level N-Channel Power MOSFET AN7254 AN7260 RFP12N10L TB334
    Text: RFP12N10L Data Sheet July 1999 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET File Number Features • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as


    Original     		PDF RFP12N10L F12N10L f12n10 TA09526 Logic Level N-Channel Power MOSFET AN7254 AN7260 RFP12N10L TB334

    AN7254

    Abstract: AN7260 RFP2N12L TB334
    Text: RFP2N12L Data Sheet April 1999 2A, 120V, 1.750 Ohm, Logic Level, N-Channel Power MOSFET File Number Features • 2A, 120V The RFP2N12L is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level 5V driving sources in applications such as


    Original     		PDF RFP2N12L RFP2N12L AN7254 AN7260 TB334

    SCR TRIGGER PULSE TRANSFORMER

    Abstract: thyristor SCR1 SCR TRIGGER PULSE circuit SCR PULSE TRANSFORMER digital triggering scr RC inductive load thyristor design pulse transformer for triggering SCR SCR TRIGGER PULSE scr transformer drive gate PFN DIODE
    Text: MicroNote #601 George Repucci Senior Applications Engineer Nanosecond SCR Switch for Reliable High Current Pulse Generators and Modulators Design requirements for modulator and pulse generator circuits include fast rise time, low jitter to enhance short radar or laser ranging


    Original     		PDF UPGA301A UPGA301A SCR TRIGGER PULSE TRANSFORMER thyristor SCR1 SCR TRIGGER PULSE circuit SCR PULSE TRANSFORMER digital triggering scr RC inductive load thyristor design pulse transformer for triggering SCR SCR TRIGGER PULSE scr transformer drive gate PFN DIODE

    f12n10l

    Abstract: f12n10 AN7254 AN7260 RFP12N10L TB334
    Text: RFP12N10L Data Sheet April 2005 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET Features • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as


    Original     		PDF RFP12N10L f12n10l f12n10 AN7254 AN7260 RFP12N10L TB334

    F12n10

    Abstract: No abstract text available
    Text: RFP12N10L Data Sheet April 2005 Features 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as


    Original     		PDF RFP12N10L F12n10

    AN7254

    Abstract: AN7260 RFP8N20L TB334
    Text: RFP8N20L Data Sheet January 2002 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET Features • 8A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as


    Original     		PDF RFP8N20L AN7254 AN7260 RFP8N20L TB334

    2N6904

    Abstract: No abstract text available
    Text: toaucti, Una* TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6904 N-Channel Logic Level Power MOS Field-Effect Transistors (L2 FET) 8 A, 200 V ros(on): 0.6 0 Features: • Design optimized tor 5 volt gate drive


    Original     		PDF 2N6904 2N6904 00A//US

    AN7254

    Abstract: AN7260 RFP2N20L TB334
    Text: RFP2N20L Data Sheet January 2002 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET Features • 2A, 200V The RFP2N20L N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as


    Original     		PDF RFP2N20L RFP2N20L AN7254 AN7260 TB334

    Untitled

    Abstract: No abstract text available
    Text: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. RFP8N20L 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET Features • 8A,200V This N-Channel enhancement mode silicon gate power field


    Original     		PDF RFP8N20L 00A/HS 300ns

    AN7254

    Abstract: AN7260 RFP2N08L RFP2N10L TB334
    Text: RFP2N08L, RFP2N10L Data Sheet July 1999 2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in


    Original     		PDF RFP2N08L, RFP2N10L RFP2N08L RFP2N10L AN7254 AN7260 TB334

    Untitled

    Abstract: No abstract text available
    Text: RFP12N10L October 2013 Data Sheet N-Channel Logic Level Power MOSFET 100 V, 12 A, 200 mΩ Features • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as


    Original     		PDF RFP12N10L RFP12N10L

    Untitled

    Abstract: No abstract text available
    Text: interdi RFP2N08L, RFP2N10L D a ta S h e e t J u ly 1999 2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in


    OCR Scan     		PDF RFP2N08L, RFP2N10L RFP2N08L RFP2N10L TA0924. 050ft AN7254 AN7260.

    90C26

    Abstract: 90C32 com90c26 COM90C32 91C32 9026 COM 90C32 COM91C32 high current nanosecond pulsed driving arcnet datapoint
    Text: COM90C32 STANDARD MICROSYSTEMS CORPORATION COM 90C32 Local Area Network Transceiver LANT PIN CONFIGURATION FEATURES □ Reduces chip count for COM 9026 and COM 90C26 ARCNET implementations by 6-8 TTL chips □ Performs all clock generation functions for the COM 9026 and COM 90C26


    OCR Scan     		PDF 90C32 90C26 90C26 91C32 9026/COM TWX-510-227-8898 com90c26 COM90C32 91C32 9026 COM 90C32 COM91C32 high current nanosecond pulsed driving arcnet datapoint

    COM90C32

    Abstract: com90c26 90C32 COM9QC32 HYC9058 COM 90C32 90c26 COM91C32
    Text: COM 90C32 STANDARD MICROSYSTEMS CORPORATION COM 90C32 Locai Area Network Transceiver LANT PIN CONFIGURATION FEATURES □ Reduces chip count for COM 9026 and COM 90C26 ARCNET im plem entations by 6-8 T T L chips PULS2 C 1 V _ y i 6 □ Performs all clock generation functions


    OCR Scan     		PDF 90C32 90C32 90C26 90C26 91C32 ar1788 TWX-510-227-8898 COM90C32 com90c26 COM9QC32 HYC9058 COM 90C32 COM91C32

    2N6903

    Abstract: No abstract text available
    Text: • 43D 22 71 DDS 4 70 0 Ì34 ■ HAS 2N 6903 03 HARRIS January 1994 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET Package Features T0-205AF BOTTOM VIEW • 0.98A, 200V • rDS(on) = 3 .6 5 n GATE SOURCE • Design Optimized for 5V Gate Drive


    OCR Scan     		PDF T0-205AF 00S4702 2N6903

    f12n10L

    Abstract: f12n10
    Text: in te fs il RFP12N10L D ata S h e e t J u ly 1999 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET F ile N u m b e r Features • 12A, 100 V These are N-Channel enhancem ent mode silicon gate power field effect transistors specifically designed for use


    OCR Scan     		PDF RFP12N10L TA09526. RFP12N10L 0-56mA AN7254 AN7260 75BVds f12n10L f12n10

    F12N10L

    Abstract: f12n10
    Text: RFP12N10L S e m iconductor April 1999 Data Sheet 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET • 12A, 100V RFP12N10L PACKAGE TO-22QAB • r DS ON = 0.200i2 • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits


    OCR Scan     		PDF RFP12N10L O-22QAB 200i2 AN7254 AN7260 RFP12N101Test F12N10L f12n10

    RFP2N15L

    Abstract: RFL1N12L RFL1N15L RFP2N12L TA9529 TA9528 rfp1n12
    Text: Logic-Level Power MOSFETs RFL1N12L, RFL1N15L, RFP2N12L, RFP2N15L File Number N-Channel Logic Level Power Field-Effect Transistors L2 FET o 1 and 2 A, 120 V and 150 V rDs(on): 1.750 and 1.90 Feature*: • Design optimized for 5 volt gate drive ■ Can be driven directly from Q-MOS, N-MOS, TTL Circuits


    OCR Scan     		PDF RFL1N12L, RFL1N15L, RFP2N12L, RFP2N15L 92CS-337 RFL1N12L RFL1N15L RFP2N12L TA9529 TA9528 rfp1n12