transistor s parameters noise
Abstract: NPN planar RF transistor 929 marking 23marking
Text: S 929 T TELEFUNKEN Semiconductors Silicon NPN planar RF transistor Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency Dimensions in mm Case 23 A 3 DIN 41869 SOT 23 Marking: P1 Absolute Maximum Ratings
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D-74025
transistor s parameters noise
NPN planar RF transistor
929 marking
23marking
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HSB83
Abstract: No abstract text available
Text: HSB83 Silicon Epitaxial Planar Diode for High Voltage Switching REJ03G0187-0200Z Previous: ADE-208-489A Rev.2.00 Mar.22.2004 Features • High reverse voltage. (VR = 250 V) • CMPAK package is suitable for high density surface mounting and high speed assembly.
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HSB83
REJ03G0187-0200Z
ADE-208-489A)
HSB83
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HSM83
Abstract: No abstract text available
Text: HSM83 Silicon Epitaxial Planar Diode for High Voltage Switching REJ03G0172-0500Z Previous: ADE-208-091D Rev.5.00 Jan.13.2004 Features • High reverse voltage. (VR = 250V) • MPAK package is suitable for high density surface mounting and high speed assembly.
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HSM83
REJ03G0172-0500Z
ADE-208-091D)
HSM83
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HSK122
Abstract: HSK83
Text: HSK83 Silicon Epitaxial Planar Diode for High Voltage Switching REJ03G0191-0400Z Previous: ADE-208-169C Rev.4.00 Mar.22.2004 Features • High reverse voltage. (VR = 250 V) • LLD package is suitable for high density surface mounting and high speed assembly.
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HSK83
REJ03G0191-0400Z
ADE-208-169C)
HSK122
HSK83
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Untitled
Abstract: No abstract text available
Text: HSU83 Silicon Epitaxial Planar Diode for High Voltage Switching REJ03G0189-0200Z Previous: ADE-208-307A Rev.2.00 Mar.22.2004 Features • High reverse voltage. (VR = 250 V) • Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly.
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HSU83
REJ03G0189-0200Z
ADE-208-307A)
HSU83
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Untitled
Abstract: No abstract text available
Text: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to
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FLL57MK
FLL57MK
FCSI0598M200
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fll57
Abstract: FLL57MK
Text: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to
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FLL57MK
FLL57MK
Un4888
fll57
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0.1 j100
Abstract: FLL57MK fll57
Text: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to
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FLL57MK
FLL57MK
0.1 j100
fll57
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FLL57MK
Abstract: No abstract text available
Text: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to
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FLL57MK
FLL57MK
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fll57
Abstract: No abstract text available
Text: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: hadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to
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FLL57MK
FLL57MK
FCSI0598M200
fll57
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FLL57MK
Abstract: fll57 01 j100
Text: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to
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FLL57MK
FLL57MK
FCSI0598M200
fll57
01 j100
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MIC911
Abstract: 12F-10 MIC910 MIC912 MIC913 MIC914
Text: HIGH SPEED OP AMPS 100MHz – 350MHz Low Power Op Amps Micrel’s MIC91x op amps set a new standard for low power consumption at high speed. And unlike most other high speed op amps, the MIC91x family can drive high capacitance loads—in fact, they can drive any capacitance!
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100MHz
350MHz
MIC91x
112dB,
OT23-5
MIC910
MIC911
MIC912
MIC913
MIC911
12F-10
MIC910
MIC912
MIC913
MIC914
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44P0K
Abstract: R1RW0416D R1RW0416DGE-2LR R1RW0416DGE-2PR R1RW0416DSB-2LR R1RW0416DSB-2PR
Text: R1RW0416D Series 4M High Speed SRAM 256-kword x 16-bit REJ03C0107-0100Z Rev. 1.00 Mar.12.2004 Description The R1RW0416D is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
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R1RW0416D
256-kword
16-bit)
REJ03C0107-0100Z
16-bit.
R1RW0416D
400-mil
44-pin
44P0K
R1RW0416DGE-2LR
R1RW0416DGE-2PR
R1RW0416DSB-2LR
R1RW0416DSB-2PR
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R1RW0408D
Abstract: R1RW0408DGE-2LR R1RW0408DGE-2PR
Text: R1RW0408D Series 4M High Speed SRAM 512-kword x 8-bit REJ03C0111-0100Z Rev. 1.00 Mar.12.2004 Description The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
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R1RW0408D
512-kword
REJ03C0111-0100Z
R1RW0408D
400-mil
36-pin
R1RW0408DGE-2LR
R1RW0408DGE-2PR
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R1RP0408DGE-2PR
Abstract: R1RP0408D R1RP0408DGE-2LR
Text: R1RP0408D Series 4M High Speed SRAM 512-kword x 8-bit REJ03C0112-0100Z Rev. 1.00 Mar.12.2004 Description The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
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R1RP0408D
512-kword
REJ03C0112-0100Z
512-k
400-mil
36-pin
R1RP0408DGE-2PR
R1RP0408DGE-2LR
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32P0K
Abstract: R1RP0404D R1RP0404DGE-2LR R1RP0404DGE-2PR
Text: R1RP0404D Series 4M High Speed SRAM 1-Mword x 4-bit REJ03C0116-0100Z Rev. 1.00 Mar.12.2004 Description The R1RP0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing
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R1RP0404D
REJ03C0116-0100Z
400-mil
32-pin
32P0K
R1RP0404DGE-2LR
R1RP0404DGE-2PR
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R1RP0416DSB-2LR
Abstract: R1RP0416DGE-2LR 44P0K R1RP0416D R1RP0416DGE-2PR R1RP0416DSB-2PR
Text: R1RP0416D Series 4M High Speed SRAM 256-kword x 16-bit REJ03C0108-0100Z Rev. 1.00 Mar.12.2004 Description The R1RP0416D Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
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R1RP0416D
256-kword
16-bit)
REJ03C0108-0100Z
256-k
16-bit.
400-mil
44-pin
R1RP0416DSB-2LR
R1RP0416DGE-2LR
44P0K
R1RP0416DGE-2PR
R1RP0416DSB-2PR
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Untitled
Abstract: No abstract text available
Text: Agilent Technologies U7248A High Speed Inter-Chip HSIC Compliance Test Software Infiniium Oscilloscopes Data Sheet Agilent Technologies U7248A High Speed Inter-Chip (HSIC) Compliance Test Software Infiniium Oscilloscopes USB 2.0 High Speed Inter-Chip Compliance Test Software
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U7248A
U7248A
5990-9246EN
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929 phototube
Abstract: GL-929 HIGH 929 K-8639625 ETI-191
Text: PHOTOTUBE DESCRIPTIO N The GL-929 is a high-vacuum, two-electrode phototube which has extraordinarily high sensitivity to light sources predominating in blue radia- tion. Because of its excellent stability, and high sensitivity, the GL-929 is particularly suited
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GL-929
K-8070703
K-8639625
929 phototube
HIGH 929
ETI-191
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VA708
Abstract: LP 8029 EZ 929 8029 hl
Text: V 1~ C INC 93SÔ 929 V T C _ D1 ci 3 a a ciBcl OOQliSSQ 3 IN C 99D 01250 T -1 9 - 23 VA708 HIGH-SPEED, FAST-SETTLING, HIGH OUTPUT CURRENT OPERATIONAL AMPLIFIER, A CL2> 3 LSP FAMILY DATA SHEETS a cm FEATURES • Fast Settling Time; ±0.1% in 150ns • High Slew Rate: 90V4is
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VA708
150ns
90V4is
100MHz
VA708
DS032-5M8861
LP 8029
EZ 929
8029 hl
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23marking
Abstract: sot-23 Marking s31
Text: Te m ic S 929 T TELEFUNKEN Semiconductors Silicon NPN planar RF transistor Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure High transition frequency Dimensions in mm technical drawings according to DIN specifications
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D-74025
23marking
sot-23 Marking s31
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2SK1929
Abstract: No abstract text available
Text: TOSHIBA 2SK1929 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SII.5 2 S K 1 929 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in m m T0-220FL CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE 10.3MAX.
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2SK1929
T0-220FL
961001EAA2'
2SK1929
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FLL57MK
Abstract: fll57 fujitsu gaas fet L-band fujitsu gaas fet
Text: FLL57MK _ L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P ^ b = 36.0dBm Typ. High Gain: = 11.5dB (Typ.) High PAE: riadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION
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FLL57MK
FLL57MK
FCSI0598M200
fll57
fujitsu gaas fet L-band
fujitsu gaas fet
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DAM11W1P
Abstract: DAM11W1S DM53742-1 DCM21WA4P DM53740-15 DDM24W7P DM53741-5001 dm53742-5001 DM51157-8 DM53740-5000
Text: D-Subminiature High Reliability Metal Shell .109" 2.77mm Density Coaxial/High Voltage High Power/Solder Cup Combination Layout_ Features Mechanical Characteristics • Available in a variety of contact styles and sizes Individual Contact Insertion and
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4-40NC-3B
DAM11W1P
DAM11W1S
DM53742-1
DCM21WA4P
DM53740-15
DDM24W7P
DM53741-5001
dm53742-5001
DM51157-8
DM53740-5000
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