HHS3T31 Search Results

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Catalog Datasheet	MFG & Type	Document Tags	PDF
BYX38-300 Abstract: BYX38 BYX38-300R Text: IT N AMER PHILIPS/DISCRETE 2SE D H hhS3T31 □D22fiOcl b • BYX38 SERIES ' 7= 01-/7 SILICON RECTIFIER DIODES Silicon rec tifie r diodes in D O -4 m etal envelopes, intended fo r use in po w er re c tifie r ap plicatio ns. Th e series consists o f the fo llo w in g types:	OCR Scan	BYX38 BYX38-300 BYX38-300R 1200R. 10-32UNF BYX38 bbS3T31	PDF
BUZ50B Abstract: T0220AB 2SC252 Text: N AMER PHILIPS/DISCRETE OhE D PowerMOS transistor m ” hhS3T31 001MSb3 L BUZ50B W May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	hhS3T31 001MSb3 BUZ50B bb53131 T-39-11. BUZ50B T0220AB 2SC252	PDF
Untitled Abstract: No abstract text available Text: Philips Components D a ta s h e e t sta tu s Product specification d ate of Issue October 1990 BSP106 N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES . Very low RDS on • Direct interface to CMOS, TTL, etc. • High-speed switching	OCR Scan	BSP106 OT223 OT223 bbS3T31 DQ3b042 BSP106. OT223. hhS3T31	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE 90D 10592 1DD D • D T '0 3 - £ . l 00105=12 2 B Y V 23 SERIES SCHOTTKY-BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in DO—5 metal envelopes, featuring low forward voltage drop, low capacitance, absence o f stored charge and high temperature stability. They are	OCR Scan	BYV23â BYV23-30 BYV23	PDF
BYV118-35 Abstract: M3174 BYV118 M3178 Text: ESE D N AUER PHILIPS/DI SCRET E • bbSBT31 0022^=1 5 ■ BYV118 SERIES 7 "0 3 - / 7 SCHO TTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage, platinum -barrier double rectifier diodes in plastic envelopes featuring low forward voltage drop, low capacitance and absence o f stored charge. They are intended fo r use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and	OCR Scan	bbSBT31 BYV118 BYV118-35 M3174 M3178	PDF
BFG195 Abstract: 5609 transistor transistor 5609 5609 npn transistor 5609 npn 5609 6 LC 0703 transistor 702 Z TRANSISTOR MSB037 5609 t transistor Text: Philips Semiconductors bb53S31 □ □ 3 1 3 3 li 314 M APX Product specification NPN 7 GHz wideband transistor — ^ DESCRIPTION BFG195 N AUER PHILIPS/DISCRETE b'lE ]> PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for wideband	OCR Scan	bbS3T31 0D313M4 BFG195 BFG195 5609 transistor transistor 5609 5609 npn transistor 5609 npn 5609 6 LC 0703 transistor 702 Z TRANSISTOR MSB037 5609 t transistor	PDF
Untitled Abstract: No abstract text available Text: TIP30; A TIP30B; C _ A SILICON EPITAXIAL BASE POWER TRANSISTORS PNP silicon transistors in a plastic envelope intended fo r use in output stages of audio and television amplifier circuits where high peak powers can occur.NPN complements are TIP29 series.	OCR Scan	TIP30; TIP30B; TIP29 TIP30 IP30B; hhS3T31	PDF
marking code 11G1 Abstract: No abstract text available Text: • bbSB'iai 0024733 3T3 « A P X N AMER PHILIPS/DISCRETE BF990A b7E » SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected, intended for UHF applications, such as UHF television tuners with 12 V	OCR Scan	BF990A OT143 bb53T31 0Q2473b marking code 11G1	PDF
MSB11900Y Abstract: philips ic power amplifier Text: N AMER PH ILIPS/DI SCRE TE OLE D • bh53iBl DDlSQb? & ■ MSB11900Y T - 3 3 - is r PULSED M ICROW AVE PO W ER TRANSISTOR N-P-N silicon power transistor two transistor sections intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IF F applications at	OCR Scan	bb53T31 MSB11900Y T-33-isr 2x160 MSB11900Y T-33-& philips ic power amplifier	PDF
Untitled Abstract: No abstract text available Text: • bbSBisi ooaMsm boa bapx N AMER PHILIPS/DISCRETE BCV29 BCV49 b7E D J V SMALL-SIGNAL DARLINGTON TRANSISTOR NPN small-signal darlington transistors, housed in a microminiature envelope S089 . PNP complementary types are BCV28/48. QUICK REFERENCE DATA BCV29	OCR Scan	BCV29 BCV49 BCV28/48.	PDF