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    BUZ50B

    Abstract: T0220AB 2SC252
    Text: N AMER PHILIPS/DISCRETE OhE D PowerMOS transistor m ” hhS3T31 001MSb3 L BUZ50B W May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		hhS3T31 001MSb3 BUZ50B bb53131 T-39-11. BUZ50B T0220AB 2SC252 PDF