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    HFD5N60S

    Abstract: hfu5n60s
    Text: BVDSS = 600 V RDS on typ = 2.0 Ω HFD5N60S / HFU5N60S ID = 4.3 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3  Originative New Design 3 HFD5N60S  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HFU5N60S 1.Gate 2. Drain 3. Source


    Original     		HFD5N60S HFU5N60S HFD5N60S O-252 O-251 hfu5n60s PDF